CDIL GMBT22220 SILICON PLANAR EPITAXIAL TRANSISTORS N-~P-N silicon transistors Marking PACKAGE OUTLINE DETAILS CMBT2222 = 1B ALL DIMENSIONS IN mm CMBT2222A = IP 3.0 2.8 0.48 0.38 3 Pin configuration 2.6 - -f 1 = BASE 2.4 2 = EMITTER 3 = COLLECTOR 1 2{ | | 3 1.02 | 0.89 1. 0.60 2.00 0.40 1.80 ABSOLUTE MAXIMUM RATINGS * CMBT2222.) CMBT2222A Collector-base voltage (open ernitter) VcBo max. 60 Vv Collector-emitter voltage (open base) VcEO max. 30 40 Vv Emitter base voltage (open collector) VEBO max. 5,0 6,0 Vv Collector current (d.c.) Ic max. 600 mA Total power dissipation up to Tamb = 25C - Prot max. 250 mW D.C. current gain Ic = 150mA; Vcg = 10V hE 100 to 300 IC = 500mA; Vcg = 10V hrEe > 30 40 Transition frequency at f = 100 MHz Ic = 20 mA; Vcg = 20 V fr > 250 300 MHz 96 CDIL CMBT22224 RATINGS (at Ta = 25C unless otherwise specified) Limiting values CMBT2222. CMBT2222A Collector-base voltage (open emitter) VcBOo max. 60 75 Vv Collector-emitter voltage (open base) VcEO max. 30 40 Vv Emitter-base voltage (open collector) VEBO max. 5,0 6,0 Vv Collector current (d.c,) Ic max. 600 mA Total power dissipation up to Tamb = 25C Phot max. 250 mW Storage temperature range Tstg -55 to +150 C Junction temperature T; max. 150 C THERMAL RESISTANCE From junction to ambient Rth j-a 500 K/w CHARACTERISTICS Tj = 25 C unless otherwise specified CMBT2222) CMBT2222A Collector cut-off current Ip = 0; Vcp = 50 V IcBo < 0,01 pA Ig = 0; Vcp = 60 V Icpo < - 0,01 pA Ig * 0; Vcp = 50 V; Tj - 125 C Icpo < 10 - pA Ig = 0; Vcp = 60 V; Tj ~ 125 C Icpo < - 10 pA Vep =3 V; VcgE = 60 V IceEx <- - 10 nA Base current with reverse biased emitter junction Vep = 3V; Vcg = 60V IpEx < - 20 nA Emitter cut-off current Ic = 0; Vep = 3V IEBO < - 10 nA Saturation voltages Ic = 150 mA; Ip = 15 mA VckEsat < 400 300 mV VBEsat < 13 - Vv VBEsat - 0,6 to 1,2 V Ic = 500 mA; Ig = 50 mA VcEsat < 160. 1.0 Vv VBEsat < 2.6 2.0 Vv Breakdown voltages Ic = 1,0mA; Ip = 0 V(BR)CEO > 30 40 v Ic = 100pA; Ig = 0 V(BR)CBO > 60 75 Vv Ic = 0; Ig = 10pA V(BR)EBO > 5,0 6,0 Vv 97 DIL GMBT22224 CMBT2222 | CMBT2222A D.C. current gain Ic = 0,1 mA; Veg = 10V hre > 35 Ic = 1 mA; Vcg = 10V hfe > 50 lc = 10 mA; Veg = 10 V hE > 75 ic = 10 mA; Vcg = 10 V; Tamb = -55 C hE > 35 Ic = 150mA; Vcg = 10V hE 100 to 300 Ic = 150 mA; VcgE=1V hpe > 50 Ic = 500 mA; Vcg = 10 V rE > 30 40 Transition frequency at f = 100 MHz Ic = 20 mA; Vcg = 20 V fr > 250 300 MHz Output capacitance at f = 1 MHz Tg = 0; Vcp = 10V Co < 8,0 pF Input capacitance at f = 1 MHz Ic = 0; Vep = 0,5V Ci < 30 25 pF Noise figure at Rg = 1 kQ Ic = 100A; Vcg = 10V; f = 1 kHz F < 4,0 dB Switching times (between 10% and 90% levels) Turn-on time switched to I, = 150 mA delay time td < 10 ns rise time tr < 25 ns Turn-off time switched from I, = 150 mA storage time ts < 225 ns fall time te < 60 ns Small Signal Current Gain VCE = 10V; Ic = 10mA; f = 1 KHz hfe > 50 < 300 VcE = 10V; Ic = 10mA; f = 1 KHz hfe > 75 < 375 98