IXGH48N60B3D1 - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VCES TC = 25°C to 150°C 600 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ± 20 V

VGEM Transient ± 30 V

IC110 TC = 110°C 48 A

ID110 TC = 110°C 30 A

ICM TC = 25°C, 1ms 280 A

SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A

(RBSOA) Clamped inductive load @ ≤ 600V

PCTC = 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from case for 10s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight 6 g

DS100036(09/08)

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVCES IC = 250μA, VGE = 0V 600 V

VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES 300 μA

VGE = 0V TJ = 125°C 1.75 mA

IGES VCE = 0V, VGE = ± 20V ±100 nA

VCE(sat) IC = 32A, VGE = 15V, Note 1 1.8 V

VCES = 600V

IC110 = 48A

VCE(sat) ≤≤

≤≤

≤ 1.8V

GenX3TM 600V IGBT

with Diode

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

IXGH48N60B3D1

TO-247(IXGH)

GC

E

( TAB )

Features

zOptimized for low conduction and

switching losses

zSquare RBSOA

zAnti-parallel ultra fast diode

zInternational standard package

Advantages

zHigh power density

zLow gate drive requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

Preliminary Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

IXGH48N60B3D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs IC = 30A, VCE = 10V, Note 1 28 46 S

Cies 3980 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 190 pF

Cres 45 pF

Qg 115 nC

Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 21 nC

Qgc 40 nC

td(on) 22 ns

tri 25 ns

Eon 0.84 mJ

td(off) 130 200 ns

tfi 116 200 ns

Eoff 0.66 1.20 mJ

td(on) 19 ns

tri 25 ns

Eon 1.71 mJ

td(off) 190 ns

tfi 157 ns

Eoff 1.30 mJ

RthJC 0.42 °C/W

RthCS 0.21 °C/W

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

Inductive Load, TJ = 125°C

IC = 30A, VGE = 15V

VCE = 480V, RG = 5Ω

Reverse Diode (FRED) (D1 Version ONLY)

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

VF IF = 30A, VGE = 0V, Note 1 2.8 V

TJ = 150°C 1.6 V

IRM 4 A

trr TJ = 100°C 100 ns

RthJC 1.5 °C/W

RthCS 1.5 °C/W

IF= 30A, VGE = 0V, VR= 100V

-diF/dt =100A/μs

IF = 1A; -di/dt = 100A/μs, VR = 30V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Inductive Load, TJ = 25°C

IC = 30A, VGE = 15V

VCE = 480V, RG = 5Ω

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

VCE - Volts

IC - Amperes

VGE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

0246810121416

VCE - Volts

IC

-

Amperes

VGE

= 15V

13V

11V

7V

9V

Fi g . 3. Ou tpu t C h a r acter isti cs

@ 125ºC

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

VCE - Volts

IC - Amperes

VGE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

VCE(sat) - Normalized

VGE

= 15V

I C = 80A

I C = 40A

I C = 20A

Fi g . 5. C ol l ect o r-to - Emi tter Vo l tag e

vs. Gate-to -Emi tter Vo ltag e

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

3.6

3.8

5 6 7 8 9 10 11 12 13 14 15

VGE - Volts

VCE - Volts

I C

= 80A

40A

20A

TJ = 25ºC

Fi g . 6. I n pu t Admittan ce

0

20

40

60

80

100

120

140

160

180

200

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

VGE - Volts

IC

-

Amperes

TJ = 125ºC

25ºC

- 40ºC

IXGH48N60B3D1

IXYS reserves the right to change limits, test conditions and dimensions.

IXGH48N60B3D1

Fi g. 11. Maximum Tr an si ent Ther mal I mped an ce

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

Fig. 7. T ransconductance

0

10

20

30

40

50

60

70

80

0 20 40 60 80 100 120 140

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R everse-B i as Safe Oper ati n g Area

0

20

40

60

80

100

120

140

100 150 200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 5Ω

dV / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 40A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXYS REF: G_48N60B3D1(56) 05-05-08-A

Fig. 12. Inductive Switching

Ener g y L o ss vs. Gate R esi stance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

E

off

- MilliJoules

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

E

on

- MilliJoules

Eoff Eon

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 480V

I

C

= 30A

I

C

= 60A

I

C

= 15A

Fig. 17. Inductive Turn-off

Switc h i n g Times vs . Gate R esistan ce

120

130

140

150

160

170

180

190

200

210

220

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

t

f

- Nanoseconds

150

200

250

300

350

400

450

500

550

600

650

t

d(off)

- Nanoseconds

t

f

t

d(off

)

- - - -

T

J

= 125ºC, V

GE

= 15V

VCE = 480V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 13. Inductive Switching

Energy Loss vs. Collector Current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 5Ω

,

V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energy Loss vs. Junction T emperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

E

on

- MilliJoules

Eoff Eon

- - - -

R

G

= 5Ω

,

V

GE

= 15V

V

CE

= 480V

I

C

= 30A

I

C

= 60A

I

C

= 15A

Fig. 16. Inductive Turn-off

Switchi n g Ti mes vs. C o l l ector Cu r r en t

100

110

120

130

140

150

160

170

180

190

200

210

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

f

- Nanoseconds

120

130

140

150

160

170

180

190

200

210

220

230

t

d(off)

- Nanoseconds

t

f

t

d(off) - - - -

R

G

= 5Ω

, V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Inductive Turn-off

Switchi n g Ti mes vs. Ju n ctio n Temp er atur e

100

110

120

130

140

150

160

170

180

190

200

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

120

130

140

150

160

170

180

190

200

210

220

t

d(off)

- Nanoseconds

t

f

t

d(off) - - - -

R

G

= 5Ω

, V

GE

= 15V

V

CE

= 480V

I

C

= 60A, 15A

I C = 60A, 15A

I

C

= 30A

IXGH48N60B3D1

IXYS reserves the right to change limits, test conditions and dimensions.

IXGH48N60B3D1

IXYS REF: G_48N60B3D1(56) 05-05-08-A

Fig. 18. Inductive Turn-on

Switchi n g Times vs. Gate Resi stance

0

10

20

30

40

50

60

70

80

90

100

110

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

t

r

- Nanoseconds

15

20

25

30

35

40

45

50

55

60

65

70

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 15A

I

C

= 30A

I

C

= 60A

Fig. 19. Inductive Turn-on

Switchi n g Times vs. C o l l ector C u r r en t

10

15

20

25

30

35

40

45

50

55

60

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

r

- Nanoseconds

18

19

20

21

22

23

24

25

26

27

28

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 5Ω

, V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

25ºC < T

J

< 125ºC

Fig. 20. Inductive Turn-on

Switching Times vs. Junction T emperature

5

10

15

20

25

30

35

40

45

50

55

60

65

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

16

17

18

19

20

21

22

23

24

25

26

27

28

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 5

Ω

, V

GE

= 15V

V

CE

= 480V

I

C

= 15A

I

C

= 30A

I

C

= 60A

IXGH48N60B3D1

IXYS REF: G_48N60B3D1(56) 05-05-08-A

200 600 10000 400 800

60

70

80

90

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

Kf

TVJ

°C

-diF/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.00

0.25

0.50

0.75

1.00

VFR

diF/dt

V

200 600 10000 400 800

0

5

10

15

20

25

30

100 1000

0

200

400

600

800

1000

0123

0

10

20

30

40

50

60

IRM

Qr

IF

A

VF-diF/dt -diF/dt

A/μs

A

V

nC

A/μsA/μs

trr

ns tfr

ZthJC

A/μs

μs

DSEP 29-06

IF= 60A

IF= 30A

IF= 15A

TVJ= 100°C

VR = 300V

TVJ= 100°C

IF = 30A

Fig. 23. Peak reverse current IRM

versus -diF/dt

Fig. 22. Reverse recovery charge Qr

versus -diF/dt

Fig. 21. Forward current IF versus VF

TVJ= 100°C

VR = 300V

TVJ= 100°C

VR = 300V

IF= 60A

IF= 30A

IF= 15A

Qr

IRM

Fig. 24. Dynamic parameters Qr, IRM

versus TVJ

Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and

tfr versus diF/dt

IF= 60A

IF= 30A

IF= 15A

tfr

VFR

Fig. 27. Transient thermal resistance junction to case

TVJ=25°C

TVJ=100°C

TVJ=150°C

Time - Seconds

0.0001 0.001 0.01 0.1 1

ZthJC - K/W

0.001

0.01

0.1

1