DIM200PKM33-F000 - Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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FEATURES

• 10µs Short Circuit Withstand

• Soft Punch Through Silicon

• Isolated AlSiC Base with AlN substrates

• High thermal cycling capability

APPLICATIONS

• Choppers

• Motor Controllers

• Power Supplies

• Traction Auxiliaries

The Powerline range of high power modules

includes half bridge, chopper, dual, single and bi-

directional switch configurations covering voltages

from 600V to 3300V and currents up to 2400A.

The DIM200PKM33-F000 is a 3300V, n channel

enhancement mode, insulated gate bipolar transistor

(IGBT) chopper module configured with the upper

arm of the bridge controlled. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus full

10µs short circuit withstand. This device is optimised

for traction drives and other applications requiring

high thermal cycling capability.

The module incorporates an electrically isolated

base plate and low inductance construction enabling

circuit designers to optimise circuit layouts and

utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM200PKM33-F000

Note: When ordering, please use the whole part number.

KEY PARAMETERS

VCES 3300V

VCE (sat)* (typ) 2.8V

IC(max) 200A

IC(PK) (max) 400A

*(measured at the power busbars and not the auxiliary terminals)

Fig. 1 Chopper circuit diagram

Outline type code: P

(See package details for further information)

DIM200PKM33-F000

IGBT Chopper Module

DS5465- 1.0 September 2005 (LN24183)

SEMICONDUCTOR

DIM200PKM33-F000

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Fig. 2 Electrical connections (not to scale)

SEMICONDUCTOR

DIM200PKM33-F000

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ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.

In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the

package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings

may affect device reliability.

Tcase = 25°C unless stated otherwise

Symbol Parameter Test Conditions Max. Units

VCES Collector-emitter voltage VGE = 0V 3300 V

VGES Gate-emitter voltage ±20 V

ICContinuous collector current Tcase = 90°C 200 A

IC(PK) Peak collector current 1ms, Tcase =115°C 400 A

Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 2.6 W

Diode I2t value (IGBT arm) 20

I2tDiode I2t value (Diode arm) VR = 0, tP = 10ms, Tvj = 125°C 20 kA2S

Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V

QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC

SEMICONDUCTOR

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THERMAL AND MECHANICAL RATINGS

Internal insulation material: AIN

Baseplate material: AlSiC

Creepage distance: 33mm

Clearance: 20mm

CTI (Critical Tracking Index): 175

Symbol Parameter Test Conditions Min. Typ. Max. Units

Rth(j-c) Thermal resistance - transistor Continuous dissipation –

junction to case

- - 48 °C/kW

Thermal resistance – diode (IGBT

arm)

Rth(j-c) Thermal resistance- diode ( Diode

arm)

Continuous dissipation –

junction to case

- - 96

°C/kW

Rth(c-h) Thermal resistance – case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

- - 16 °C/kW

TjJunction temperature Transistor - - 150 °C

Diode - - 125 °C

Tstg Storage temperature range - -40 - 125 °C

-Screw torque Mounting – M6 - - 5 Nm

Electrical connections – M5 - - 4 Nm

SEMICONDUCTOR

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol Parameter Test Conditions Min. Typ. Max. Units

Ices Collector cut-off current VGE = 0V, VCE = VCES - - 1 mA

VGE = 0V, VCE = VCES, Tcase = 125°C - - 15 mA

Ices Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA

VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 5.5 6.5 7.0 V

VCE(sat)Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.8 - V

VGE = 15V, IC = 200A, Tcase = 125°C - 3.6 - V

IFDiode forward current DC - - 200 A

IFM Diode maximum forward current tp = 1ms - - 400 A

Diode forward voltage (IGBT arm) 2.9 -

VFDiode forward voltage (Diode arm) IF = 200A - 2.9 - V

3.0 -

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm) IF = 200A, Tcase = 125°C - 3.0 - V

Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 36 - nF

LMModule inductance – per arm - - 40 - nH

RINT Internal resistance – per arm - - 0.5 - mΩ

SCData Short circuit. Isc Tj = 125°C, V cc = 2500V, I1- 1000 - A

tp ≤ 10µs,

VCE(max) = VCES - L*×di/dt I2- 930 - A

IEC 60747-9

Note:

 Measured at the power busbars and not the auxiliary terminals

* L is the circuit inductance + LM

SEMICONDUCTOR

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol Parameter Test Conditions Min. Typ. Max. Units

td(off) Turn-off delay time IC = 200A - 1950 - ns

tfFall time VGE = ±15V - 170 - ns

EOFF Turn-off energy loss VCE = 1800V - 220 - mJ

td(on) Turn-on delay time RG(ON) = RG(OFF) = 16.5Ω- 1180 - ns

trRise time L ∼ 100nH - 225 - ns

QgGate charge Cge = 56nF - 5 - µC

EON Turn-on energy loss RG(ON) = 7.5Ω- 290 - mJ

Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 80 - µC

Irr Diode reverse current dlF/dt = 1600A/µs - 144 - A

EREC Diode reverse recovery energy Diode arm - 75 - mJ

Tcase = 125°C unless stated otherwise.

Symbol Parameter Test Conditions Min. Typ. Max. Units

td(off) Turn-off delay time IC = 200A - 2200 - ns

tfFall time VGE = ±15V - 190 - ns

EOFF Turn-off energy loss VCE = 1800V - 265 - mJ

td(on) Turn-on delay time RG(ON) = RG(OFF) = 16.5Ω- 1150 - ns

trRise time L ∼ 100nH, Cge = 56nF - 280 - ns

EON Turn-on energy loss RG(ON) = 7.5Ω- 390 - mJ

Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 125 - µC

Irr Diode reverse current dlF/dt = 1600A/µs - 155 - A

EREC Diode reverse recovery energy Diode arm - 130 - mJ

SEMICONDUCTOR

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Fig.3 Typical output characteristics Fig.4 Typical output characteristics

Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance

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Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area

Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance

SEMICONDUCTOR

DIM200PKM33-F000

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PACKAGE DETAILS

For further package information, please visit our website or contact Customer Services. All dimensions in mm,

unless stated otherwise.

DO NOT SCALE.

Nominal weight: 750 g

Module outline type code: P

SEMICONDUCTOR

DIM200PKM33-F000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the

basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in

device voltages and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general

use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy

the growing needs of our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly

Complete Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been

designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and

liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales

representative or Customer Services.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

HEADQUARTERS OPERATIONS CUSTOMER SERVICE

DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020

Doddington Road, Lincoln

Lincolnshire, LN6 3LF. United Kingdom.

Tel: +44(0)1522 500500

Fax: +44(0)1522 500550

 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR

RESALE. PRODUCED IN UNITED KINGDOM.

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as

follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No

actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may

change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or

suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible

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