TLP131
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP131
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler,
suitable for surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.
• Collector−emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 3750Vrms (min.)
• UL recognized: UL1577, file No. E67349
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
Pin Configurations (top view)
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
5
4
3
16
Unit in mm
TOSHIBA 11−4C2
Weight: 0.09 g (typ.)
TLP131
2007-10-01
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Current Transfer Ratio
Current Transfer
Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB
Rank Y 50 150 Y, Y■
Rank GR 100 300 G, G■
TLP131
Rank GB 100 600 G, G■, B, B■, GB
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta≥53°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse,100pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 80 V
Collector−base voltage VCBO 80 V
Emitter−collector voltage VECO 7 V
Emitter−base voltage VEBO 7 V
Collector current IC 50 mA
Peak collector current (10ms pulse,100pps) ICP 100 mA
Power dissipation PC 150 mW
Power dissipation derationg (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C
Isolation voltage (AC, 1min., RH≤ 60%) (Note 1) BVS 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
TLP131
2007-10-01
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Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 48 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ― ― 10 μA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector−emitter
breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V
Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V
Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V
VCE = 48V ― 10 100 nA
collector dark current ICEO
VCE = 48V,Ta = 85°C ― 2 50 μA
Collector dark current ICER VCE = 48V,Ta = 85°C
RBE = 1MΩ ― 0.5 10 μA
Collector dark current ICBO V
CB = 10V ― 0.1 ― nA
DC forward current gain hFE V
CE = 5V,IC = 0.5mA ― 400 ― ―
Detector
Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50 ― 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 ― 600
%
― 60 ―
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 ― ―
%
Base photo−current IPB I
F = 5mA,VCB = 5V ― 10 ― μA
IC = 2.4 mA, IF = 8 mA ― ― 0.4
― 0.2 ―
Collector−emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB ― ― 0.4
V
Off−state collector current IC (off) I
F = 0.7mA, VCE = 48 V ― 1 10 μA
TLP131
2007-10-01
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V 5×1010 1014 ― Ω
AC, 1 minute 3750 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
― 3 ―
μs
Turn−on time tON ― 2 ―
Storage time ts ― 25 ―
Turn−off time tOFF
RL = 1.9 kΩ%) (Fig.1)
RBE = OPEN
VCC = 5 V, IF = 16 mA ― 40 ―
μs
Turn−on time tON ― 2 ―
Storage time ts ― 20 ―
Turn−off time tOFF
RL = 1.9 kΩ%) (Fig.1)
RBE = 220 kΩ
VCC = 5 V, IF = 16 mA ― 30 ―
μs
Fig. 1 Switching time test circuit
VCC
VCE
IF
tON tOFF
tS
4.5V
0.5V
IF VCC
VCE
RL
RBE
TLP131
2007-10-01
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IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF
(
mA
)
0
100
−20
80
60
40
20
0 20
40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
200
0
−20
160
120
80
40
0 20 40 60 80 120 100
ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature coefficient
ΔVF / ΔTa (mV / °C)
−3.2
−0.4
0.1
−0.8
−2.8
−2.0
−1.6
−1.2
0.3
−2.4
1 5 50 0.5 3 10 30
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 25 ° C
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
500
300
100
50
30
10
5
3
Pulse width ≦ 10μs
Repetitive
Frequency = 100Hz
Ta = 25 ° C
IFP – DR
Duty cycle ratio DR
Pulse forward current
IFP (mA)
3000
10
3
30
1000
300
10−3
500
10−210−1 100 3 3 3
100
50
Pulse width ≦ 100μs
Ta = 25 ° C
TLP131
2007-10-01
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IC – VCE
IC – VCE
Collector–emitter voltage VCE (V)
Collector current IC (mA)
30
0
0
20
10
0.2 0.4 0.6 0.8 1.0
IF = 50mA
40mA
30mA
20mA
10mA
5mA
2mA
Ta = 25 ° C
Forward current IF (mA)
IC – IF
Collector current IC (mA)
100
0.1
0.3
0.3
50
10
1
0.5
0.5
30
3 10 100 1 5 50 30
3
5
V
CE = 10V
V
CE = 5V
V
CE = 0.4V
Ta = 25 ° C
SAMPLE A
SAMPLE B
Collector–emitter voltage VCE (V)
Collector current IC (mA)
20mA
50
0
0
40
30
20
10
2 4
6 8 10
Ta = 25 ° C
50mA
30mA
15mA
10mA
PC
(
MAX.
)
IF = 5mA
IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
1000
0.3
50
300
100
0.5
500
3 10 100 1 5 30 50
SAMPLE B
Ta = 25 ° C
V
CE = 10V
V
CE = 5V
V
CE = 0.4V
SAMPLE A
IC – IF at RBE
Forward current IF (mA)
Collector current IC (mA)
100
0.1
0.1
5
30
1
0.3
50
3 10 100 1 5 30 50
10
3
0.3
0.5
0.5
A
VCC
IF
RBE
RBE = ∞ 500kΩ 100kΩ
50kΩ
Ta = 25 ° C
VCE = 5V
IPB – IF
Forward current IF (mA)
Base photo current IPB (μs)
300
0.1
0.1
3
30
1
0.5
100
3 10 100 1 5 30 50
10
0.3
0.3
Ta = 25 ° C
VCB
IF
A
VCB = 0V
VCB = 5V
TLP131
2007-10-01
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VCE(sat) – Ta
Ambient temperature Ta (℃)
Collector–emitter saturation
voltage VCE
(
sat
)
(V)
0.24
0
−40
0.20
0.16
0.12
0.04
−20 0 20 40 60 100 80
0.08
IF = 5mA
Ic = 1mA
IC – Ta
Ambient temperature Ta (℃)
Collector current IC (mA)
100
0.1
-20
50
30
10
5
0 20
40 60 80
100
3
1
0.3
0.5
10mA
5mA
0.5mA
1mA
VCE = 5V
IF = 25mA
101
10−4
0 20 40 60 80 100 120
100
10−1
10−2
10−3
ICEO – Ta
Collector dark current ICEO (μA)
Ambient temperature Ta (℃)
5V
VCE = 48V
10V
24V
Switching Time – RL
Load resistance RL (kΩ)
Switching time (μs)
1
1
30
300
100
50
3 10 30 50 100 5
3
5
10
tOFF
tON
Ta = 2 5 ℃
IF = 16mA
VCC = 5V
RBE = 220kΩ
ts
TLP131
2007-10-01
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1
1
30
500
300
100
50
3 10 30
50 100
5
3
5
10
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
tON
ts
Switching Time – RBE
Base-emitter resistance RBE (Ω)
Switching time (μs)
1000
1
100k
30
500
300
100
50
300k 1M 3M ∞
3
5
10
tOFF
tON
ts
Ta = 2 5 ℃
IF = 16mA
VCC = 5V
RL = 1.9kΩ
Switching time (μs)
1000
Switching Time – RL
Load resistance RL (Ω)
TLP131
2007-10-01
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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