Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
BAW56TT1/D
BAW56TT1G,
SBAW56TT1G
Dual Switching Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Max Unit
Reverse Voltage VR70 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1), TA = 25C
Derated above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient
(Note 1)
RJA 555 C/W
Total Device Dissipation,
FR−4 Board (Note 2), TA = 25C
Derated above 25C
PD360
2.9
mW
mW/C
Thermal Resistance, Junction−to−Ambient
(Note 2)
RJA 345 C/W
Junction and Storage
Temperature Range
TJ, T
stg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 1.0 Inch Pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
CASE 463
SC−75/SOT−416
STYLE 4
MARKING DIAGRAM
3
ANODE
CATHODE
1
2
CATHODE
BAW56TT1G 3,000 /
Tape & Reel
SC−75/SOT−416
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A1 M G
G
A1 = Specific Device Code
M = Date Code*
G= Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
http://onsemi.com
SBAW56TT1G 3,000 /
Tape & Reel
SC−75/SOT−416
(Pb−Free)
BAW56TT1G, SBAW56TT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR) 70 −
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
−
−
−
30
2.5
50
mAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−2.0
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 W, IR(REC) = 1.0 mAdc) (Figure 1)
trr
−6.0
ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAW56TT1G, SBAW56TT1G
http://onsemi.com
3
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.75
0
VR, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = -40C
TA = 25C
TA = 150C
TA = 125C
TA = 85C
TA = 55C
TA = 25C
IR, REVERSE CURRENT (A)
Figure 5. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
BAW56TT1G, SBAW56TT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAW56TT1/D
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