MMBF170LT1 - ON Semiconductor

October, 2011 − Rev. 7

1Publication Order Number:

MMBF170LT1/D

MMBF170LT1, MVBF170LT1

Power MOSFET

500 mA, 60 V

N−Channel SOT−23

Features

•AEC Q101 Qualified − MVBF170LT1

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage VDSS 60 Vdc

Drain−Gate Voltage VDGS 60 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 ms)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current − Continuous

− Pulsed

IDM

0.5

0.8

Adc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1.) TA = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

N−Channel

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM

& PIN ASSIGNMENT

500 mA, 60 V

RDS(on) = 5 W

Drain

2 SourceGate 1

http://onsemi.com

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 2 of this data sheet.

6Z MG

6Z = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

MMBF170LT1, MVBF170LT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 60 −Vdc

Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSS −10 nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) −5.0 W

On−State Drain Current (VDS = 25 Vdc, VGS = 0) ID(off) −0.5 mA

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)

Ciss −60 pF

SWITCHING CHARACTERISTICS (Note 1)

Turn−On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)

Figure 1

td(on) −10 ns

Turn−Off Delay Time td(off) −10

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping†

MMBF170LT1G SOT−23 (TO−236)

(Pb−Free)

3000 / Tape & Reel

MMBF170LT3G SOT−23 (TO−236)

(Pb−Free)

10000 / Tape & Reel

MVBF170LT1G SOT−23 (TO−236)

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Switching Test Circuit Figure 2. Switching Waveform

20 dB 50 W

ATTENUATOR

PULSE

GENERATOR

50 W

50 W1 MW

Vout

125 W

+25 V

40 pF

Vin

TO SAMPLING

SCOPE

50 W INPUT

PULSE WIDTH

50%

90%

50%

10%

90% 90%

Vin

OUTPUT

INVERTED

INPUT

(Vin AMPLITUDE 10 VOLTS)

Vout

toff

td(off)

ton

td(on) tr

MMBF170LT1, MVBF170LT1

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

7543210

0.2

0.4

0.6

0.8

4321

0.4

0.8

1.0

ID, DRAIN CURRENT (A)

1.0

1.2

TJ = 25°C

VGS = 10 V

4.2 V

5.0 V

4.5 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

VDS ≥ 10 V

TJ = 25°C

TJ = 150°C

TJ = −55°C

0.2

0.6

Figure 5. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

0.850.550.450.350.250.15

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.65 0.75

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

Figure 6. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

10.50

2.5

12.5

VGS, GATE−TO−SOURCE VOLTAGE (V)

1.5

7.5

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID = 0.5 A

TJ = 25°C

VDS VGS

Qgd

Qgs

Figure 7. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

0.90.80.70.60.50.4

0.04

0.20

IS, SOURCE CURRENT (A)

0.08

0.12

0.16

0.24

VGS = 0 V

TJ = 25°C

0.02

0.06

0.22

0.10

0.14

0.18

1.00.30.20.1

87656

MMBF170LT1, MVBF170LT1

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

VGS(th), THRESHOLD VOLTAGE (NORMALIZED)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

−60 −20 20 60 100 140 −60 −20 20 60 100 140

T, TEMPERATURE (°C)

Figure 8. Temperature versus Static

Drain−Source On−Resistance

T, TEMPERATURE (°C)

Figure 9. Temperature versus Gate

Threshold Voltage

VGS = 10 V

ID = 200 mA

VDS = VGS

ID = 1.0 mA

MMBF170LT1, MVBF170LT1

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

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MMBF170LT1/D

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

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