MK22FX512VMC12R - FREESCALE

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

General Description

The AP3015/A are Pulse Frequency Modulation

(PFM) DC/DC converters. These two devices are func-

tionally equivalent except the switching current limit.

The AP3015 is designed for higher power systems

with 350mA current limit, and the AP3015A is for

lower power systems with 100mA current limit.

The AP3015/A feature a wide input voltage. The oper-

ation voltage is ranged from 1.2Vto 12V (1V to 12V

for AP3015A). A current limited, fixed off-time con-

trol scheme conserves operating current, resulting in

high efficiency over a broad range of load current.

They also feature low quiescent current, switching cur-

rent limiting, low temperature coefficient, etc.

Fewer tiny external components are required in the

applications to save space and lower cost.

Furthermore, to ease its use in differnet systems, a dis-

able terminal is designed to turn on or turn off the chip.

The AP3015/A are available in SOT-23-5 package.

Features

·Low Quiescent Current

In Active Mode (Not Switching): 17µA Typical

In Shutdown Mode: <1µA

·Low Operating VIN

1.2V Typical for AP3015

1.0V Typical for AP3015A

·Low VCESAT Switch

200mV Typical at 300mA for AP3015

70mV Typical at 70mA for AP3015A

·High Output Voltage: up to 34V

·Fixed Off-Time Control

·Switching Current Limiting

350mA Typical for AP3015

100mA Typical for AP3015A

·Operating Temperature Range: -40oC to 85oC

Applications

·MP3, MP4

·Battery Power Supply System

·LCD/OLED Bias Supply

·Handheld Device

·Portable Communication Device

Figure 1. Package Type of AP3015/A

SOT-23-5

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Figure 2. Pin Configuration of AP3015/A (Top View)

Pin Description

Pin Number Pin Name Function

1 SW Switch Pin. This is the collector of the internal NPN power switch. Minimize the trace area

connected to this Pin to minimize EMI

2 GND Ground Pin. GND should be tied directly to ground plane for best performance

3 FB Feedback Pin. Set the output voltage through this pin. The formula is VOUT=1.23V*(1+R1/

R2). Keep the loop between Vout and FB as short as possible to minimize the ripple and noise,

which is beneficial to the stability and output ripple

4 SHDN Shutdown Control Pin. Tie this pin above 0.9V to enable the device. Tie below 0.25V to turn

off the device

IN Supply Input Pin. Bypass this pin with a capacitor as close to the device as possible

Pin Configuration

K Package

(SOT-23-5)

VIN

SHDN

GND

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

SHDN

VIN

Ordering Information

Functional Block Diagram

GND

DRIVER

400nS

ONE SHOT

Bandgap

CURRENT-LIMIT

REFERENCE

CURRENT-LIMIT

COMPARATOR

RESET

VREF

FEEDBACK

COMPARATOR

ENABLE

Figure 3. Functional Block Diagram of AP3015/A

Package Temperature

Range

Part Number Marking ID Packing Type

Lead Free Green Lead Free Green

SOT-23-5 -40 to 85oC

AP3015KTR-E1 AP3015KTR-G1 E6E G6E Tape & Reel

AP3015AKTR-E1 AP3015AKTR-G1 E6F G6F Tape & Reel

Circuit Type

Package

G1: Green

AP3015

TR: Tape and Reel

K: SOT-23-5

Blank: AP3015

A: AP3015A

E1: Lead Free

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with

"G1" suffix are available in green package.

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to

the device. These are stress ratings only, and functional operation of the device at these or any other conditions

beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-

imum Ratings" for extended periods may affect device reliability.

Parameter Symbol Min Max Unit

Input Voltage VIN

AP3105 1.2 12 V

AP3105A 1.0 12

Operating Temperature TA-40 85 oC

Recommended Operating Conditions

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Input Voltage VIN 15 V

SW Voltage VSW 38 V

FB Voltage VFB VIN V

SHDN Pin Voltage VSHDN 15 V

Thermal Resistance (Junction to Ambient, no Heat sink) RθJA 265 oC/W

Operating Junction Temperature TJ150 oC

Storage Temperature Range TSTG -65 to 150 oC

Lead Temperature (Soldering, 10sec) TLEAD 260 oC

ESD (Human Body Model) 3000 V

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

(VIN=VSHDN=1.2V, TA=25oC, unless otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage VIN

AP3015 1.2 12 V

AP3015A 1.0 12

Quiescent Current IQ

Not Switching 17 30 µA

VSHDN =0V 1

Feedback Voltage VFB 1.205 1.23 1.255 V

FB Comparator Hysteresis VFBH 8mV

FB Pin Bias Current IFB VFB=1.23V 30 80 nA

Output Voltage Line Regulation LNR 1.2V

12V

0.05 0.1 %/V

Switching Current Limit IL

AP3015 300 350 400 mA

AP3015A 75 100 125

Switch Saturation Voltage VCESAT

AP3015, ISW=300mA 200 300 mV

AP3015A, ISW=70mA 70 120

Switch Off Time TOFF

VFB>1V 400 nS

VFB

0.6V 1.5 µS

SHDN Input Threshold High VTH 0.9 V

SHDN Input Threshold Low VTL 0.25

SHDN Pin Current ISHDN

VSHDN =1.2V 2 3 µA

VSHDN =5V 8 12

Switch Leakage Current ISWL Switch Off, VSW=5V 0.01 5 µA

Thermal Resistance

(Junction to Case)

θJC 52 oC/W

Electrical Characteristics

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Typical Performance Characteristics

Figure 4. Quiescent Current vs. Junction Temperature

Figure 5. Feedback Voltage vs. Junction Temperature

Figure 6. Switch Off Time vs. Junction Temperature Figure 7. Shutdown Pin Current vs. Shutdown Pin Voltage

Unless otherwise noted, VIN=1.2V

-50 -25 0 25 50 75 100

14.0

14.5

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

20.0

Quiescent Current (µA)

Junction Temperature (OC)

Quiescent Current, No Switching

VIN=1.2V

VIN=12V

-50 -25 0 25 50 75 100

1.205

1.210

1.215

1.220

1.225

1.230

1.235

1.240

1.245

1.250

1.255

Feedback Voltage (V)

Junction Temperature (OC)

0.0 2.5 5.0 7.5 10.0 12.5 15.0

Shutdown Pin Current (µA)

Shutdown Pin Voltage (V)

TJ=-50OC

TJ=25OC

TJ=100OC

-50 -25 0 25 50 75 100

350

360

370

380

390

400

410

420

430

440

450

Switch Off Time (ns)

Junction Temperature (OC)

VFB>1V, VIN=1.2V

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Figure 9. Switch Current Limit vs. Junction Temperature

Typical Performance Characteristics (Continued)

Figure 10. Saturation Voltage vs. Junction Temperature Figure 11. Saturation Voltage vs. Junction Temperature

Figure 8. Switch Current Limit vs. Junction Temperature

Unless otherwise noted, VIN=1.2V

-50 -25 0 25 50 75 100

Saturation Voltage (mV)

Junction Temperature (OC)

AP3015A, ISWITCH=70mA

VIN=1.2V

VIN=12V

-50 -25 0 25 50 75 100

200

250

300

350

400

450

500

Switch Current Limit (mA)

Junction Temperature (OC)

AP3015

VIN=1.2V

VIN=12V

-50 -25 0 25 50 75 100

100

102

104

106

108

110

112

114

116

118

120

Switch Current Limit (mA)

Junction Temperature (OC)

AP3015A

VIN=1.2V

VIN=12V

-50 -25 0 25 50 75 100

150

160

170

180

190

200

210

220

230

240

250

Saturation Voltage (mV)

Junction Temperature (OC)

AP3015, ISWITCH=300mA

VIN=1.2V

VIN=12V

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Figure 13. Efficiency

Typical Performance Characteristics (Continued)

Figure 12. Efficiency

Unless otherwise noted, VIN=1.2V

Application Information

Operating Principles

AP3015/A feature a constant off-time control scheme.

Refer to Figure 3， the bandgap voltage VREF (1.23V

typical) is used to control the output voltage.

When the voltage at the FB pin drops below the lower

hysteresis point of Feedback Comparator (typical

hysteresis is 8mV), the Feedback Comparator enables

the chip and the NPN power switch is turned on, the

current in the inductor begins to ramp up and store

energy in the coil while the load current is supplied by

the output capacitor. Once the current in the inductor

reaches the current limit, the Current-Limit

Comparator resets the 400ns One-Shot which turns off

the NPN switch for 400ns. The SW voltage rises to the

output voltage plus a diode drop and the inductor

current begins to ramp down. During this time the

energy stored in the inductor is transferred to COUT

and the load. After the 400ns off-time, the NPN switch

is turned on and energy will be stored in the inductor

again.

This cycle will continue until the voltage at FB pin

reaches 1.23V, the Feedback Comparator disables the

chip and turns off the NPN switch. The load current is

then supplied solely by output capacitor and the output

voltage will decrease. When the FB pin voltage drops

below the lower hysteresis point of Feedback

Comparator, the Feedback Comparator enables the

device and repeats the cycle described previously.

Under not switching condition, the IQ of the device is

about 17µA.

The AP3015/A contain additional circuitry to provide

protection during start-up or under short-circuit

conditions. When the FB pin voltage is lower than

approximately 0.6V, the switch off-time is increased

to 1.5µs and the current limit is reduced to about

250mA (70mA for AP3015A). This reduces the

average inductor current and helps to minimize the

power dissipation in the AP3015/A power switch, in

the external inductor and in the diode.

The SHDN pin can be used to turn off the AP3015/A

and reduce the IQ to less than 1µA. In shutdown mode

the output voltage will be a diode drop below the input

voltage.

0.1 1 10

Efficiency (%)

Load Current (mA)

AP3015

VOUT=20V, L=10µH, COUT=1µF

Refer to Figure 14

VIN=4.2V

VIN=3.3V

VIN=2.5V

0.1 1 10

Efficiency (%)

Load Current (mA)

AP3015A

VOUT=3.3V, L=10µH, COUT=20µF

Refer to Figure 15

VIN=2.5V

VIN=1.2V

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

Typical Application

Figure 14. AP3015 Typical Application in LCD/OLED Bias Supply

Figure 15. AP3015A Typical Application in 1 or 2 Cells to 3.3V Boost Converter

C1, C2: X5R or X7R Ceramic Capacitor

L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent

C1, C2, C3: X5R or X7R Ceramic Capacitor

L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent

VIN SW

SHDN AP3015 FB

GND

VIN L1

10µΗ

2.5V to 4.2V

4.7µF

1µF

SS14

130K

RLOAD

VOUT

20V

VIN SW

SHDN AP3015A FB

GND

VIN L1

10µΗ

1.2V to 2.5V

4.7µF

20µF

SS14

600K

RLOAD

VOUT

3.3V

10pF

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A

May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Data

Sheet

SOT-23-5 Unit: mm(inch)

Mechanical Dimensions

2.820(0.111)

2.650(0.104)

1.500(0.059)

0.000(0.000)

0.300(0.012)

0.950(0.037)

0.900(0.035)

0.100(0.004)

0.200(0.008)

0.300(0.012)

8°

0°

3.020(0.119)

1.700(0.067)

2.950(0.116)

0.400(0.016)

0.150(0.006)

1.300(0.051)

0.200(0.008)

0.600(0.024)

1.800(0.071)

2.000(0.079)

0.700(0.028)

REF

TYP

1.450(0.057)

MAX

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277