QS043-401M0055 (2/4) 110 93 0 .2 5 Dimension:mm 4 - O6.5 2 -M8 4 108 93 4 - O6.5 2 -M6 9 2 4 62 1 14 16 48 (E) 4 (C) 1 80 (E) 2 20 20 20 62 0 .2 5 1 2 3 3 (G) 3 13 21 24 2 -M4 29 29 20 11 25.5 23 LABEL 7 7 LABEL 23 - 0.5 36 +1.0 - 0.5 25.5 +1.0 13 2 -M4 PH MB600B12C PH MB600B12 ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange , ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V = 20V,= 0V . ollector-mitter aturation oltage = 600A,= 15V . . ate-mitter hreshold oltage = 5V,= 600mA = 10V,= 0V,= 1MH 50,000 = 600V L= 1 G= 1 = 15V . . . . . . . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime orward urrent eak orward oltage everse ecovery ime . . . = 600A,= 0V . . = 600A,= -10V i/t= 1200A/s . . . . hermal mpedance iode th(j-c) Junction to Case http://store.iiic.cc/ . . . QS043-401M0055 (3/4) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 1200 VGE=20V Collector to Emitter Voltage V CE (V) Collector Current I C (A) I C=300A 15V 1000 800 9V 600 400 8V 200 7V 0 0 2 TC=25 16 10V 12V 4 6 8 14 600A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 12 16 RL=1 TC=25 16 700 14 600 12 500 10 8 400 VCE =600V 6 300 400V 200 4 200V 2 100 0 20 0 800 Gate to Emitter Voltage V GE (V) 1600 2400 3200 0 4800 Fig.6- Collector Current vs. Switching Time (Typical) 1.6 200000 VGE=0V f=1MHZ TC =25 100000 Cies VCC=600V RG=0.82 VGE=15V TC=25 1.4 50000 Switching Time t (s) 1.2 Capacitance C (pF) 4000 Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 Coes 10000 5000 2000 Cres 0.8 500 0.2 0.2 0.5 1 2 5 10 20 50 100 200 tf 0.6 0.4 0.1 tOFF 1 1000 200 20 0 tON tr 0 Collector to Emitter Voltage V CE (V) 100 200 300 400 Collector Current IC (A) http://store.iiic.cc/ 500 600 Gate to Emitter Voltage V GE (V) 600A 4 16 800 1200A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 0 8 Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) I C=300A 1200A QS043-401M0055 (4/4) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 1200 VCC=600V IC=600A VGE=15V TC=25 Switching Time t (s) 5 ton 1 tr 0.5 tf 0.2 800 600 400 200 0.1 0.1 0.2 0.5 1 2 5 10 0 20 0 1 2 3 Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area 1000 5000 I F=600A TC=25 R G=0.82 VGE=15V TC125 2000 500 1000 trr 500 Collector Current I C (A) 300 4 Forward Voltage V F (V) Series Gate Impedance RG () 200 100 I RrM 50 200 100 50 20 10 5 2 1 20 0.5 10 0 600 1200 1800 2400 3000 0.2 3600 0 400 800 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) fig11-Tansient Thermal Impedance -1 2x10 Tansient Thermal Impedance Rth (J-C) (C/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125 1000 2 0.05 TC=25 toff Forward Current I F (A) 10 -1 FRD -2 IGBT 1x10 5x10 2x10 -2 -2 1x10 5x10 -3 2x10 -3 -3 1x10 Tc=25 -4 5x10 1 Shot -4 2x10 10 -5 10 -4 10 -3 -2 10 10 Time t s http://store.iiic.cc/ -1 1 10 1 1600