DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) -12V 102m @ VGS = -4.5V 116m @ VGS = -2.5V * * * * * * * ID TA = 25C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * Battery Management Load Switch Battery Protection Low Qg & Qgd Small Footprint Low Profile 0.62mm height ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * Case: WL-CSP1010H6-4 Terminal Connections: See Diagram Below Weight: 0.005 grams (approximate) WL-CSP1010H6-4 ESD PROTECTED TO 3kV D D G S Top View Equivalent Circuit Ordering Information (Note 3) Part Number DMP1096UCB4-7 Notes: Case WL-CSP1010H6-4 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Date Code Key Year Code Month Code 1W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2010 X Jan 1 2011 Y Feb 2 DMP1096UCB4 Document number: DS31954 Rev. 6 - 2 Mar 3 BW YM 1W YM Marking Information 2012 Z Apr 4 May 5 BW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D May 2012 (c) Diodes Incorporated DMP1096UCB4 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = 25C TA = 70C TA = 25C TA = 70C Value -12 -5 -2.6 -2.1 ID IDM -2.4 -1.9 -10 Symbol PD RJA TJ, TSTG Value 0.82 150 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25C (Note 5) Operating and Storage Temperature Range Unit W C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS BVGSS IDSS IGSS -12 -6.0 - - -7.0 -1 -500 V V A nA VGS = 0V, ID = -250A VDS = 0V, IG = -250A VDS = -9.6V, VGS = 0V VGS = -5V, VDS = 0V VGS(th) RDS (ON) -0.6 85 97 127 4 -0.6 -1.0 102 116 152 -1.0 V Static Drain-Source On-Resistance -0.4 - VDS = VGS, ID = -250A VGS = -4.5V, ID = -500mA VGS = -2.5V, ID = -500mA VGS = -1.5V, ID = -500mA VDS = -6V, ID = -500mA VGS = 0V, IS = -500mA - 251 359 70 3.7 0.4 0.6 0.2 17.6 26.9 37.5 32.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd Qg(th) tD(on) tr tD(off) tf m S V Test Condition pF VDS = -6V, VGS = 0V, f = 1.0MHz nC VGS = -4.5V, VDS = -6V, ID = -500mA ns VDS = -6V, VGS = -2.5V, RG = 20, ID = -500mA 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1096UCB4 Document number: DS31954 Rev. 6 - 2 2 of 6 www.diodes.com May 2012 (c) Diodes Incorporated DMP1096UCB4 5 5.0 VGS = -4.5V VGS = -2.5V 3.0 VGS = -2.0V 2.0 VDS = -5V 4 VGS = -3.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 4.0 VGS = -1.5V 3 2 TA = 150C 1 1.0 TA = 85C TA = 125C TA = 25C VGS = -1.2V 0.3 0.6 0.9 1.2 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1.5 0.20 0.18 0.16 0.14 0.12 VGS = -2.5V 0.10 0.08 VGS = -4.5V 0.06 0.04 0.02 0 0 1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 2 3 4 5 6 7 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8 0.5 1.0 1.5 2.0 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2.5 0.14 VGS = -4.5V 0.12 TA = 150C TA = 125C 0.10 TA = 85C T A = 25C 0.08 T A = -55C 0.06 0 1 2 3 4 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 5 0.16 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = -55C 0 0 1.4 VGS = -2.5V ID = -0.5A 1.2 VGS = -4.5V ID = -1.0A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP1096UCB4 Document number: DS31954 Rev. 6 - 2 3 of 6 www.diodes.com 0.14 0.12 VGS = -2.5V ID = -0.5A 0.10 0.08 VGS = -4.5V ID = -1.0A 0.06 0.04 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature May 2012 (c) Diodes Incorporated DMP1096UCB4 5 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 ID = -1mA 0.6 ID = -250A 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 4 TA = 25C 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 1,000 10,000 f = 1MHz -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) TA = 150C 1,000 Ciss Coss 100 Crss 10 100 TA = 125C 10 TA = 85C 1 TA = 25C 0.1 0.01 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 12 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 12 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 150C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMP1096UCB4 Document number: DS31954 Rev. 6 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 May 2012 (c) Diodes Incorporated DMP1096UCB4 Package Outline Dimensions E D WL-CSP1010H6-4 Dim Min Max Typ D 0.95 1.05 1.00 E 0.95 1.05 1.00 A 0.62 - - A2 0.38 - - A3 0.015 0.025 0.025 b 0.25 0.35 0.30 e 0.50 - - SD 0.25 - - SE 0.25 - - All Dimensions in mm A3 A2 A 4X-O b SD e SE e Suggested Pad Layout OD C Dimensions C D Value (in mm) 0.50 0.25 C DMP1096UCB4 Document number: DS31954 Rev. 6 - 2 5 of 6 www.diodes.com May 2012 (c) Diodes Incorporated DMP1096UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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