L2N7002LT1G - LESHAN RADIO CO.

1. FEATURES

●We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

●ESD Protected:1000V

2. DEVICE MARKING AND ORDERING INFORMATION

3. MAXIMUM RATINGS(Ta = 25ºC)

– Continuous TC = 25°C

TC = 100°C

– Pulsed (Note 1)

Gate–Source Voltage

– Continuous

4. THERMAL CHARACTERISTICS

Total Device Dissipation,

FR−5 Board (Note 2) @ TA = 25ºC

Derate above 25ºC

Thermal Resistance,

Junction–to–Ambient(Note 2)

Junction and Storage temperature

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

2. FR–5 = 1.0×0.75×0.062 in.

Vdc

mAdc

Parameter Symbol Limits

– Non–repetitive (tp≤50μs) VGSM ±40 Vdc

Vdc

Unit

225

Drain–Source Voltage VDSS

Marking Shipping

L2N7002LT1G 702 3000/Tape&Reel

Drain Current ID

L2N7002LT1G

S-L2N7002LT1G

Small Signal MOSFET

115 mAmps, 60 Volts N–Channel SOT-23

±115

±75

IDM ±800

VGS ±20

L2N7002LT3G 702 10000/Tape&Reel

Parameter Symbol Limits

Device

Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60

Unit

ºC/W

ºC−55∼+150TJ,Tstg

mW/ºC

RΘJA

1.8

556

SOT23(TO-236)

Leshan Radio Company, LTD. Rev.C Mar 2018 1/6

L2N7002LT1G, S-L2N7002LT1G

Small Signal MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10μAdc)

Zero Gate Voltage Drain Current

TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250μAdc)

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain–Source On–State Resistance

(VGS = 10 Vdc, ID = 500 mAdc)

TC = 25°C

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc)

TC = 25°C

TC = 125°C

Forward Transconductance

(VDS≥ 2.0 VDS(on), ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 115 mAdc, VGS = 0 V)

Source Current Continuous (Body Diode)

Source Current Pulsed

3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

Turn-On Delay Time

Turn-Off Delay Time

td(off)

td(on)

VSD Vdc

- - -1.5

-11 40

- 7 20

(VDD = 25 Vdc , ID =500

mAdc, RG = 25Ω,RL = 50

Ω,Vgen = 10 V)

RDS(on)

1.0

ID(on) 500

VDS(on) -

VGS(th)

IDSS

-3.75

0.375 Ohms

- -

Vdc

Unit

1.4 7.5

- - 13.5

2.0

- -

-13.5

1.8 7.5

1.6

- -

Symbol Min.

μAdc

1.0

Vdc

500

IGSSF - - 1.0

Typ. Max.

IGSSR - - -1.0

VBRDSS Vdc

60 - -

μAdc

gfs mmhos

80 - -

IS mAdc- -

Ciss -17 50

Coss

Crss

-10 25

-2.5 5.0

- - -800

-115

ISM mAdc

Leshan Radio Company, LTD. 2/6Rev.C Mar 2018

L2N7002LT1G, S-L2N7002LT1G

Small Signal MOSFET

6.ELECTRICAL CHARACTERISTICS CURVES

0 0.05 0.1 0.15 0.2

RDS(on), ON-Resistance(Ω)

ID, Drain Current(A)

VGS=5V

150℃

25℃

-55℃

85℃

0 0.05 0.1 0.15 0.2

RDS(on), ON-Resistance(Ω)

ID, Drain Current(A)

VGS=10V

150℃

25℃

-55℃

85℃

0.2

0.4

0.6

0.8

1.2

0 2 4 6 8 10

ID, Drain Current(A)

VGS, Gate-to-Source Voltage(V)

150℃

25℃

-55℃

0.4

0.8

1.2

1.6

0 1 2 3 4 5 6

ID,Drain Current(A)

VDS, Drain-to-Source Voltage(V)

VGS=3V

VGS=2.5V

VGS=4V

VGS=3.5V

VGS=4.5V

VGS=5V

VGS=6V

VGS=7,8,9,10V

Transfer Characteristcs

ON-Region Characteristics

RDS(on) vs. ID RDS(on) vs. ID

Leshan Radio Company, LTD. 3/6

Rev.C Mar 2018

L2N7002LT1G, S-L2N7002LT1G

Small Signal MOSFET

6.ELECTRICAL CHARACTERISTICS CURVES（Con.)

0.5

1.5

2.5

-50 0 50 100 150

RDS(on), ON_Region reisistance(normallized)

Temperataure(℃)

VGS=10V

VGS=5V

246810

RDS(on), ON-Resistance(Ω）

VGS, Gate-to-Source Voltage(V)

ID=500mA

ID=200mA

0 5 10 15 20 25 30

C,Capacitor(Pf)

VDS, Drain-to-Source Voltage(V)

VGS=0V

Ciss

Coss

Crss

0.01

0.1

0.4 0.5 0.6 0.7 0.8 0.9 1

IS, Source Current(A)

VSD, Source-to-Drain Voltage(V)

VGS=0V

85℃

25℃

RDS(on) vs. VGS RDS(on) vs. Temperature

Capacitor vs.VDS IS vs.VSD

Leshan Radio Company, LTD. 4/6

Rev.C Mar 2018

L2N7002LT1G, S-L2N7002LT1G

Small Signal MOSFET

6.ELECTRICAL CHARACTERISTICS CURVES（Con.)

0.2

0.4

0.6

0.8

1.2

1.4

-50 0 50 100 150

VGS(th), Threshold Voltage(normallized)

Temperature(℃）

ID=250uA

1.0E-10

1.0E-09

1.0E-08

1.0E-07

1.0E-06

010 20 30 40 50 60

IDS,Idss Leakage(A)

VDS, Drain-to-Source Voltage(V)

VGS=0

150℃

125℃

25℃

85℃

VGS(th) vs. Temperature IDS vs. VDS

Leshan Radio Company, LTD. 5/6

Rev.C Mar 2018

L2N7002LT1G, S-L2N7002LT1G

Small Signal MOSFET

7.OUTLINE AND DIMENSIONS Notes:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

8.SOLDERING FOOTPRINT

θ0° --- 10° 0° --- 10°

1.78 1.9 2.04 0.07 0.075 0.081

HE2.10 2.4 2.64 0.083 0.094 0.104

L1 0.10 0.2 0.3 0.004 0.008 0.012

0.35 0.54

0.09 0.13 0.18 0.003 0.005 0.007

0.114 0.122.9 3.04 0.11

0.018 0.02

0.69 0.014 0.021 0.029

A1 0.37

MIN NOM MAX MIN NOM

0.01 0.06 0.1 0.001 0.002

DIM MILLIMETERS INCHES

0.89 1

c2.80

MAX

1.20

1.11 0.035 0.04 0.044

1.3 1.4 0.047 0.051 0.055

0.004

0.44 0.5 0.015

Leshan Radio Company, LTD. 6/6Rev.C Mar 2018