FQD5N60CTM_NL - Fairchild Semiconductor

FQD5N60C / FQU5N60C

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 6.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol Parameter FQD5N60C / FQU5N60C Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 2.8 A

- Continuous (TC = 100°C) 1.8 A

IDM Drain Current - Pulsed (Note 1) 11.2 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ

IAR Avalanche Current (Note 1) 2.8 A

EAR Repetitive Avalanche Energy (Note 1) 4.9 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation (TA = 25°C)* 2.5 W

Power Dissipation (TC = 25°C) 49 W

- Derate above 25°C 0.39 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case - 2.56 °C/W

RθJA Thermal Resistance, Junction-to-Ambient* - 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient - 110 °C/W

I-PAK

FQU Series

D-PAK

FQD Series GSD

October 2008

QFET

• RoHS Compliant

FQD5N60C / FQU5N60C

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA600 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA

VDS = 480 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 1.4 A -- 2.0 2.5 Ω

gFS Forward Transconductance VDS = 40 V, ID = 1.4 A ( Note 4) -- 4.7 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 515 670 pF

Coss Output Capacitance -- 55 72 pF

Crss Reverse Transfer Capacitance -- 6.5 8. 5 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5A,

RG = 25 Ω

(Note 4, 5)

-- 10 30 ns

trTurn-On Rise Time -- 42 90 ns

td(off) Turn-Off De l a y Time -- 38 85 ns

tfTurn -Off Fa ll Time -- 4 6 100 ns

QgTotal Gate Cha rge VDS = 480 V, ID = 4.5A,

VGS = 10 V

(Note 4, 5)

-- 15 19 nC

Qgs Gate-Source Charge -- 2.5 -- nC

Qgd Gate-Drain Charge -- 6.6 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 2.8 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, I S = 4.5 A,

dIF / dt = 100 A/µs (Note 4)

-- 300 -- ns

Qrr Reverse Recovery Charge -- 2.2 - - µC

FQD5N60C / FQU5N60C

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150$

% N o tes :

1. VGS = 0V

2. 25 0&s P ulse T e s t

25$

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0481216

VDS = 300V

VDS = 120V

VDS = 480V

% Note : ID = 4.5A

VGS, Gate-Source Voltage [V]

QG, T otal Ga t e Cha r g e [nC]

0246810

VGS = 20V

VGS = 10V

% No te : TJ = 25$

RDS(ON) ['],

D rain-Source On -Resistance

ID, Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 100101

200

400

600

800

1000 Ciss = C gs + C gd (Cds = shorted)

Coss = Cds + Cgd

Crss = C gd

% N ote s ;

1. VGS = 0 V

2. f = 1 M Hz

Crss

Coss

Ciss

Capa citance [pF]

VDS, Drain-Source V oltage [V]

10-1 100101

10-2

10-1

100

101 VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Botto m : 4.5 V

% Note s :

1. 250 &s Pu lse Test

2. TC = 25$

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC

-55oC

% Notes :

1. VDS = 40V

2. 250&s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

FQD5N60C / FQU5N60C

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

% N o tes :

1. VGS = 0 V

2. ID = 250 &A

BV DSS , (N ormalized)

Drain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

% N o te s :

1 . V GS = 10 V

2 . ID = 1.4 A

RDS(ON) , (Normalized)

Drain-Source O n-Resistance

TJ, Junction Temperature [oC]

Figure 11. Transient Thermal Response Curve

10-5 10-4 10-3 10-2 10-1 100101

10-1

100% N ote s :

1 . Z(JC(t) = 2 .56 $/W M a x .

2 . Duty F ac tor, D=t1/t2

3 . TJM - T C = PDM * Z(JC(t)

s in gle puls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z(JC

(t), T herm al R esponse

t1, Sq u are W a v e Puls e Du ra tio n [s e c ]

PDM

100101102103

10-2

10-1

100

101

100 m s

10 µs

10 m s

1 ms100 µs

O p e r a tion in Th is A rea

is Limited b y R DS(on)

% Note s :

1. T C = 2 5 oC

2. T J = 1 50 oC

3. S in g le Pu ls e

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 7. Breakdown Voltage Variation

vs Temperature

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID, Drain Current [A]

TC, Case Tem perature [$

]

Figure 8. On-Resistance Variation

vs Temperature

FQD5N60C / FQU5N60C

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

FQD5N60C / FQU5N60C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQD5N60C / FQU5N60C

Dimensions in Millimeters

Mechanical Dimensions

D - PAK

FQD5N60C / FQU5N60C

Mechanical Dimensions

Dimensions in Millimeters

I - PAK

FQD5N60C / FQU5N60C

FQD5N60C / FQU5N60C Rev. A1www.fairchildsemi.com

Rev. I37

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FlashWriter® *

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,

www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.