Leaded Schottky Barrier Rectifiers
QW-BB040 Page 1
REV:A
Electrical Characteristics (at TA=25°C unless otherwise noted)
Voltage: 20 to 100 V
Current: 1.0 A
RoHS Device
SB120-G Thru. SB1100-G
Dimensions in inches and (millimeter)
DO-41
Comchip Technology CO., LTD.
1.0(25.4) Min.
1.0(25.4) Min.
.205(5.2)
.160(4.1)
.107(2.7)
.080(2.0)
.034(0.86)
.028(0.70)
Features
Mechanical data
-Low drop down voltage.
-Metal-Semiconductor junction with guard ring
-High surge current capability
-Silicon epitaxial planar chips.
-Lead-free part, meet RoHS requirements.
-Epoxy: UL94-V0 rated flame retardant
-Case: Molded plastic body DO-41
-Terminals: Solderable per MIL-STD-750 Method 2026
-Polarity: Color band denotes cathode end
-Mounting Position: Any
-Weight: 0.34grams
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
Parameter Symbol Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method) TL=110°C
Maximum f 1.0A orward voltage at
Maximum DC reverse current TA=25°C
At rated DC blocking voltage TA=100°C
Typical junction capacitance (Note 1)
Operating junction temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
TJ
-55 to +150
V
V
V
A
A
V
pF
°C/W
mA
NOTES:
1. .Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
Storage temperature range
2. Thermal resistance junction to ambient and junction to lead.
TSTG
°C
°C
Typical t (Note 2)hermal resistance RθJA
RθJL
20
20 40
40 45
45 50
50 60
60 80
80 100
100
14 28 30 35 42 56 70
1.0
-55 to +150-55 to +125
5
10
50.0
30.0
0.5
0.50 0.850.70
110
30
SB
120-G SB
140-G SB
145-G SB
150-G SB
160-G SB
1100-G
SB
180-G
Comchip
S M D D i o d e S p e c i a l i s t
80 30
Ratings at Ta=25°C unless otherwise noted.