NTF3055-100-D - ON Semiconductor

Publication Order Number:

NTF3055–100/D

 Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 0 1

NTF3055-100

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts

N–Channel SOT–223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Applications

•Power Supplies

•Converters

•Power Motor Controls

•Bridge Circuits

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain–to–Source Voltage VDSS 60 Vdc

Drain–to–Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc

Gate–to–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 10 ms) VGS ±20

±30 Vdc

Vpk

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 100°C

– Single Pulse (tp ≤ 10 µs)

IDM

3.0

1.4

9.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1.)

Total Power Dissipation @ TA = 25°C (Note 2.)

Derate above 25°C

PD2.1

1.3

0.014

W/°C

Operating and Storage Temperature Range TJ, Tstg –55 to

175 °C

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc,

IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

EAS 74 mJ

Thermal Resistance

– Junction to Ambient (Note 1.)

– Junction to Ambient (Note 2.) RθJA

RθJA 72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds TL260 °C

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area

1.127 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in2).

123

3.0 AMPERES

60 VOLTS

RDS(on) = 100 m

N–Channel

Device Package Shipping

ORDERING INFORMATION

NTF3055–100T1 SOT–223 1000 Tape & Reel

SOT–223

CASE 318E

STYLE 3

http://onsemi.com

LWW

MARKING

DIAGRAM

3055

3055 = Device Code

L = Location Code

WW = Work Week

PIN ASSIGNMENT

321

Gate Drain Source

Drain

NTF3055–100T3 SOT–223 4000 Tape & Reel

NTF3055–100T3LF SOT–223 4000 Tape & Reel

NTF3055–100

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 3.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS 60

–68

66 –

–

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS –

––

–1.0

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage (Note 3.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th) 2.0

–3.0

6.6 4.0

–

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Note 3.)

(VGS = 10 Vdc, ID = 1.5 Adc) RDS(on) – 88 100 mΩ

Static Drain–to–Source On–Resistance (Note 3.)

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 1.5 Adc, TJ = 150°C)

VDS(on) – 0.27

0.24 0.36

–

Vdc

Forward Transconductance (Note 3.) (VDS = 8.0 Vdc, ID = 1.7 Adc) gfs – 3.2 – Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V 25 Vd V 0 V

Ciss – 324 455 pF

Output Capacitance (VDS = 25 Vdc, VGS = 0 V,

f = 1.0 MHz

)

Coss – 35 50

Transfer Capacitance

MHz)

Crss –110 155

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time td(on) – 9.4 20 ns

Rise Time (VDD = 30 Vdc, ID = 3.0 Adc,

VGS =10Vdc

tr– 14 30

Turn–Of f Delay Time VGS = 10 Vdc,

RG = 9.1 Ω) (Note 3.) td(off) – 21 45

Fall Time

9.1

Ω)

(Note

3.)

tf– 13 30

Gate Charge

(V 48 Vd I 3 0 Ad

QT– 10.6 22 nC

(VDS = 48 Vdc, ID = 3.0 Adc,

= 10 Vdc

)

(

Note 3.

)

Q1– 1.9 –

VGS

Vdc)

(Note

)

Q2– 4.2 –

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc,

TJ = 150°C) (Note 3.)

VSD –

–0.89

0.74 1.0

–

Vdc

Reverse Recovery Time trr – 30 – ns

(IS = 3.0 Adc, VGS = 0 Vdc, ta– 22 –

(IS

Adc

VGS

Vdc

dIS/dt = 100 A/µs) (Note 3.) tb– 8.6 –

Reverse Recovery Stored Charge QRR – 0.04 – µC

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.

4. Switching characteristics are independent of operating junction temperatures.

NTF3055–100

http://onsemi.com

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–to–Source Voltage Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature Figure 6. Drain–to–Source Leakage Current

versus Voltage

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = 100°C

TJ = –55°C

0.16

0.12

0.1

0.08

0.06

013 6

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)

VGS = 15 V

2.2

1.8

1.6

1.4

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

–50 50250–25 75 125100

ID = 1.5 A

VGS = 10 V

0.8

0.6 150 1

1000

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

IDSS, LEAKAGE (nA)

04060302010 50

100

421

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

VGS = 4 V

VGS = 4.5 V

VGS = 5 V

363.5 54 4.5 5.5

0.04

0.02

1.2

0.16

0.12

0.1

0.08

0.06

04653

0.04

0.02

175

VGS = 10 V

VGS = 8 V

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = 100°C

TJ = –55°C

VDS ≥ 10 V

VGS = 0 V

TJ = 125°C

0.14 0.14

VGS = 6 V

TJ = –55°C

TJ = 100°C

NTF3055–100

http://onsemi.com

10 10 155020525

RDS(on) LIMIT

VGS

100

0.1

0.01

100

800

500

400

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE

(VOLTS)

C, CAPACITANCE (pF)

300

200

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate–to–Source and

Drain–to–Source Voltage versus Total Charge

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

RG, GATE RESISTANCE (Ω)

Figure 10. Diode Forward Voltage versus Current

VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

t, TIME (ns)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID, DRAIN CURRENT (AMPS)

EAS, SINGLE PULSE DRAIN–TO–SOURCE

AVALANCHE ENERGY (mJ)

0108412

1 10 100 0.54 0.660.620.58 0.78

0.1 10 1001 25 125 15010075 17550

ID = 3 A

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V TJ = 25°C

Crss Ciss

Coss

Crss

0.7 0.74

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDS = 30 V

ID = 3 A

VGS = 10 V

VGS = 0 V

TJ = 25°C

ID = 7 A

1 ms

100 µs

10 ms

td(off)

td(on)

VDS

0.9

062

THERMAL LIMIT

PACKAGE LIMIT

100

600

700

0.82 0.86

NTF3055–100

http://onsemi.com

0.001 1001010.10.001 1000

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

RESISTANCE (NORMALIZED)

t, TIME (s)

1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)

Figure 13. Thermal Response

0.1

0.01

0.010.00010.00001

NTF3055–100

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PACKAGE DIMENSIONS

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

123

0.08 (0003)

DIM

MIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.



SOT–223 (TO–261)

CASE 318E–04

ISSUE K

NTF3055–100

http://onsemi.com

Notes

NTF3055–100

http://onsemi.com

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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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NTF3055–100/D

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