International Rectifier HEXFET Power MOSFET PD-9.331] IRFD9120 @ Dynamic dv/dt Rating Repetitive Avalanche Rated @ For Automatic Insertion @ End Stackable @ P-Channel @ 175C Operating Temperature @ Fast Switching Voss = -1 0OV Rpsion) = 0.60Q Ip = -1.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt. Absolute Maximum Ratings HD-1 Parameter Max. Units lb @ Tc = 25C Continuous Drain Current, Ves @ -10 V 1.0 Ip @ Tg = 100C | Continuous Drain Current, Vas @ -10 V -0.70 A lpm Pulsed Drain Current @ -8.0 Pp @ Tc =25C_; Power Dissipation 13 Ww Linear Derating Factor 0.0083 wre Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 140 mJ laR Avalanche Current -1.0 A Ear Repetitive Avalanche Energy 0.13 mJ dv/at Peak Diode Recovery dv/dt @ 5.5 Vins Ty Operating Junction and -5 to +175 Tst Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Raa Junction-to-Ambient _ _ 120 C/W 545IRFD9120 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vieryoss Drain-to-Source Breakdown Voltage -100 | - V__| Vas=0V, ln=-250uA AV erjoss/ATy| Breakdown Voltage Temp. Coefficient {| -0.10] | V/C | Reference to 25C, Ip=-1mA Rosvon) Static Drain-to-Source On-Resistance _ | 0.60 Q | Vaes=-10V, In=-0.60A Veasith) Gate Threshold Voltage 20; | -4.0 V_| Vos=Ves, ln=-250nA is Forward Transconductance 0.71 | _ S__| Vos=-50V, Ip=-0.60A Ipss Drain-to-Source Leakage Current _| -100 pA Vos=-100V, Vas=0V _ -500 Vps=-80V, Vas=0V, Ty=150C lass Gate-to-Source Forward Leakage = | -100 nA Vas=-20V Gate-to-Source Reverse Leakage _ 100 Ves=20V Qg Total Gate Charge = _- 18 Ipb=-6.8A Qos Gate-to-Source Charge _ | 3.0 | nC | Vpg=-80V Qoa Gate-to-Drain ("Miller") Charge _ 9.0 Vas=-10V See Fig. 6 and 13 @ tdyon) Turn-On Delay Time _ 9.6 _ Vop=-50V tr Rise Time _ 29 _ ns |p=-6.8A tarot Turn-Off Delay Time - 21 _ Re=18Q tr Fall Time _ 25 _ Rp=7.1Q See Figure 10 @ Lo Internal Drain Inductance _ 4.0 _ e mm (0. sead ) 2 nH =| from package if Ls Internal Source Inductance | 60} and center of = die contact 8 Ciss Input Capacitance _ 390 _ Vaes=0V Coss Output Capacitance 170 | PF | Vps=-25V Ciss Reverse Transfer Capacitance _ 45 =_ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ | -10 MOSFET symbol B (Body Diode) , A showing the Ism Pulsed Source Current _ | -80 integral reverse (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ | 63 Vs | Ty=25C, Ig=-1.0A, Vag=0V tr Reverse Recovery Time _ 98 | 200 | ns_ | Ty=25C, Ir=-6.8A On Reverse Recovery Charge ~ | 0.33 | 0.66 | pC | di/dt=100A/us ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) Vop=-25V, starting Ty+25C, L=52mH Rg=25Q, las=-2.0A (See Figure 12) Isps-6.8A, di/dts110A/us, Vop<V(BRypss, Tys175C @ Pulse width < 300 is; duty cycle <2%. 546-lp, Drain Current (Amps) -Ip, Drain Current (Amps) -lp, Drain Current (Amps) 20us PULSE WIDTH To = 280 -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Te=25C (Normalized) Vog = 50V 20us PULSE WIDTH Rosvon); Drain-to-Source On Resistance -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRFD9120 20us PULSE WIDTH To = 175C -Vps, Drain-to-Source Voltage (voits) Fig 2. Typical Output Characteristics, To=175C es = 74 1 0.0 -40-20 0 Ty, Junction Temperature (C) 40 BO 80 100 Fig 4. Normalized On-Resistance Vs. Temperature 547Capacitance (pF) -lsp, Reverse Drain Current (Amps) Cgs + Cgq: Cys Cag + Cngs -Vpg, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 104 10 Veg = OV 104 -Vsp, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage 0 -Vgs, Gate-to-Source Voltage (volts) -Ip, Drain Current (Amps) 0 FOR TEST CIRCUIT SEE FIGURE 13 4 4 Qe, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 102 OPERATION IN THIS AREA LIMITED 5 BY Ros (ON) T Ty=1759C SINGLE wi 2 8S 4 2 5 qo 2 5 4922 58 493 -Vps, Drain-to-Source Voltage (volts) 2 Fig 8. Maximum Safe Operating Area 548-Ip, Drain.Current (Amps) IRFD9120 D Vos > WAN D.U.T. 4.0 y , Vpp 0.8 YY -10V Pulse Width < tps Duty Factor s 0.1% 0.6 Fig 10a. Switching Time Test Circuit 0.4 taon) tr tao) Ves | 40% 0.2 | | | | | { 6 25 50 75 400 4125 150 475 90% ) Tc, Case Temperature (C) Vos S \ XL Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Zajc) Fig 11. 109 we Q. i Oo Se 1 NOTES: 4. DUTY FACTOR, D=t,/tg 2. PEAK T, x 10 4 4 1 0.41 i 40 ty, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-Case 108 Fig 10b. Switching Time Waveforms 549IRFD9120 | Vary tpto obtain VDS> required las 350 300 250 200 Fig 12a. Unclamped Inductive Test Circuit so lag nr Eqs, Single Pulse Energy (mJ) Vos = -25V 0 Vpp 25 50 75 100 = 125 150175 Starting Ty, Junction Temperature(C) Vier)oss Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Same Type as D.U.T. - Td 50K 3 = .2yF 12V 7 | 7 .apF |_____. Q aovfo a7 pt | k- Qes Qep J 7 Ves Ve Charge le * bo Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit See page 1506 Appendix B: Package Outline Mechanical Drawing See page 1507 Appendix C: Part Marking Information See page 1515 int em ati onal Rectifier 550