DPG 30 C 300 PC V RRM = 300 V I FAV = 2x 15 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 30 C 300 PC Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-263 (D2Pak) Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. max. Unit V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.08 mA TVJ = 25 C 1.26 V 1.51 V 1.01 V 1.29 V TC = 140C 15 A TVJ = 175C 0.69 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A rectangular TVJ = 150 C d = 0.5 18 m 1.70 K/W 175 C TC = 25 C 90 W TVJ = 45C 240 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 300 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C 15 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 3 A TVJ = 125C 6.5 A TVJ = 25 C 35 ns TVJ = 125C 55 ns TVJ = 25 C 20 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125a DPG 30 C 300 PC Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) 1) Unit 35 0.25 -55 Weight FC max. A K/W 150 2 20 mounting force with clip C g 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part No. Logo Part number D P G 30 C 300 PC XXXXXXXXX IXYS yww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) Date Code Order Code abcd Ordering Standard Part Name DPG 30 C 300 PC Similar Part DPG30C300PB DPG30C300HB IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG30C300PC Package TO-220AB (3) TO-247AD (3) Delivering Mode Tape & Reel Base Qty Code Key 800 501901 Voltage Class 300 300 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125a DPG 30 C 300 PC Outlines TO-263 (D2Pak) Dim. A A1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.20 0.245 0.323 e 2,54 BSC 0,100 BSC H 14.61 15.88 0.575 L 1.78 2.79 0.070 0.625 0.110 L1 1.02 1.68 0.040 0.066 L2 1.02 1.52 0.040 0.060 typ. typ. 0.040 0.0016 0.02 0.0008 All dimensions conform with and/or are within JEDEC standard. W IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125a DPG 30 C 300 PC 80 0.5 16 TVJ = 125C VR = 200 V 70 IF = 30 A IF = 15 A 12 IF = 7.5 A 50 15 A Qrr TVJ = 25C 150C IRM 10 0.3 40 [A] 14 0.4 60 IF 30 A 7.5 A [C] 30 8 [A] 0.2 6 20 4 0.1 10 TVJ = 125C VR = 200 V 2 0 0.0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 0 0 Fig. 1 Forward current IF vs. VF 100 200 300 400 500 600 -diF/dt [A/s] 0 -diF/dt [A/s] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 100 200 300 400 500 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 70 400 16 TVJ = 125C 14 VR = 200 V 1.2 TVJ = 125C 60 0.8 trr Kf IF = 30 A 50 VFR 10 300 tfr 8 0.6 [ns] IRM [V] 40 15 A 0.4 [ns] 6 20 20 40 60 80 100 120 140 160 TVJ [C] 0 0 100 200 300 400 500 600 0 -diF /dt [A/s] Fig. 5 Typ. recovery time trr vs. -diF /dt Fig. 4 Dynamic parameters Q rr, IRM versus TVJ 16 tfr VFR 2 0.0 0 200 4 7.5 A 30 Qrr 0.2 100 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1.8 14 1.6 12 Erec IF = 15 A VR = 200 V 12 1.0 IF = 30 A IF = 15 A 10 1.4 ZthJC IF = 7.5 A 8 1.2 [K/W] [J] 1.0 6 4 0.8 TVJ = 125C 2 VR = 200 V 0.6 0 0 100 200 300 400 500 600 -diF/dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125a