© 2008 IXYS All rights reserved 1 - 3
20080523b
FMD 15-06KC5
FDM 15-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
ID25 = 15 A
VDSS = 600 V
RDS(on) max = 0.165 Ω
CoolMOS™ 1) Power MOSFET
with HiPerDyn ™ FRED
Buck and Boost Topologies
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
MOSFET T
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
15
11
A
A
EAS
EAR
single pulse
repetitive
522
0.79
mJ
mJ
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
ID = 7.9 A; TC = 25°C
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
RDSon VGS = 10 V; ID = 12 A 150 165 mΩ
VGS(th) VDS = VGS; ID = 0.9 mA 2.5 3 3.5 V
IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C
TVJ = 125°C tbd
1µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 100 nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
2000
100
pF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
40
9
13
52 nC
nC
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec off
VGS = 10 V; VDS = 400 V
ID = 12 A; RG = 3.3 Ω
tbd
ns
ns
ns
ns
mJ
mJ
mJ
RthJC
RthCH with heat transfer paste 0.35
1.1 K/W
K/W
1) CoolMOS™ is a trademark of
Infi neon Technologies AG.
ISOPLUS i4™
1
5isolated back
surface
q
E72873
FMD
4
3
1
2
D
T
FDM
5
3
4
2
T
D
© 2008 IXYS All rights reserved 2 - 3
20080523b
FMD 15-06KC5
FDM 15-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
MOSFET T Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
ISVGS = 0 V 12 A
VSD IF = 12 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V
390
7.5
38
ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating
storage
-55...+150
-55...+125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
CPcoupling capacity between shorted pins
and mounting tab in the case
40 pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight 9g
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 15 A TVJ = 25°C
IF = 30 A
2.50
3.00
V
V
IF = 15 A TVJ = 150°C
IF = 30 A
2.00
2.55
A
A
IRVR = VRRM T
VJ = 25°C
T
VJ = 150°C
1
0.08
µA
mA
IFSM t = 10 ms (50 Hz), sine; TVJ = 45°C150 A
IRM
trr
IF = 20 A; VR = 100 V; TVJ = 25°C
-diF /dt = 200 A/µs
3
35
A
ns
RthJC
RthJH with heat transfer paste 0.8
2.4 K/W
K/W
Diode D (data for series connection)
Symbol Conditions Maximum Ratings
VRRM TVJ = 25°C to 150°C 600 V
IF25
IF90
TC = 25°C
TC = 90°C
15
8
A
A
© 2008 IXYS All rights reserved 3 - 3
20080523b
FMD 15-06KC5
FDM 15-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
ISOPLUS i4TM Outline
