SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5615US thru 1N5623US
1N5615US – 1N5623US
DESCRIPTION APPEARANCE
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetica lly sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Surface mount package series equiv ale nt to the
JEDEC registered 1N5615 to 1N5623 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
• Axial-leaded e quivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
• Fast recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 13oC/W junction to en d cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 1.0 Amps @
TA = 55ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWAR
D
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
CAPACITANCE
(MAX.)
C @ VR =12 V
f=1 MHz
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
trr
VOLTS VOLTS AMPS VOLTS μA pF AMPS ns
50oC 100oC 25oC 100oC
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
.8 MIN.
1.6
MAX.
.5
.5
.5
.5
.5
25
25
25
25
25
45
35
25
20
15
25
25
25
25
25
150
150
250
300
500
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controll ed where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
Microsemi
Scottsdale Division Page 1
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A
Copyright © 2009
10-06-2009 REV E; SD47A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5615US thru 1N5623US
1N5615US – 1N5623US
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating
temperature range
IO Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL REVERSE CURRENT vs VR TYPICAL FORWARD VOL TAGE vs FORWARD CURRENT
Microsemi
Scottsdale Division Page 2
Copyright © 2009
10-06-2009 REV E; SD47A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5615US thru 1N5623US
1N5615US – 1N5623US
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
Copyright © 2009
10-06-2009 REV E; SD47A.pdf
