PSMN1R3-30YL,115 - NEXPERIA

PSMN1R3-30YL

N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK

Rev. 02 — 25 June 2009 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is

designed and qualified for use in a wide ran ge of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

RDSon and low gate charge

High efficiency gains in switching

power conver to rs

Improved mechanical and thermal

characteristics

LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion batt er y pro te ct ion

Load switching

Motor contro l

Server power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - - 30 V

IDdrain current Tmb =25°C; V

GS =10V;

see Figure 1; [1] - - 100 A

Ptot total power

dissipation Tmb = 25 °C; see Figure 2 - - 121 W

Tjjunction temp erature -55 - 150 °C

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

VGS =10V; T

j(init) =25°C;

ID= 100 A; Vsup ≤30 V;

RGS =50Ω; unclamped

- - 383 mJ

Dynamic characteristics

QGD gate-drain charge VGS = 4.5 V; ID=25A;

VDS = 12 V; see Figure 13;

see Figure 14

-9.3-nC

QG(tot) total gate charge - 46.6 - nC

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 2 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

[1] Continuous current is limited by package.

2. Pinning information

3. Ordering information

Static characteristics

RDSon drain-source

on-state resistance VGS =10V; I

D=15A;

Tj= 100 °C; see Figure 12 --1.8mΩ

VGS =10V; I

D=15A;

Tj= 25 °C; see Figure 17 - 1.04 1.3 mΩ

Table 1. Quick reference …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1S source

SOT1023

(LFPAK2)

2S source

3S source

4G gate

mb D mounting base; connected to

drain

3214

bb076

Table 3. Orderi ng information

Type number Package

Name Description Version

PSMN1R3-30YL LFPAK2 Plastic single-ende surface-mounted package (LFPAK2); 4 leads SOT1023

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 3 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

4. Limiting values

[1] Continuous current is limited by package.

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - 30 V

VDGR drain-gate voltage Tj≥25 °C; Tj≤150 °C; RGS =20kΩ-30V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb = 100 °C; see Figure 1 [1] -100A

VGS =10V; T

mb =25°C; see Figure 1 [1] -100A

IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -923A

Ptot total power dissipation Tmb =25°C; see Figure 2 -121W

Tstg storage temperature -55 150 °C

Tjjunction temperature -55 150 °C

Tsld(M) peak soldering

temperature -260°C

Source-drain diode

ISsource current Tmb =25°C; [1] -100A

ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 923 A

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source avalanche

energy

VGS =10V; T

j(init) =25°C; I

D=100A; V

sup ≤30 V;

RGS =50Ω; unclamped -383mJ

Fig 1. Normalized continuous drain currn et as a

function of moun ting base temperature Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aad141

100

150

200

250

0 50 100 150 200

Tmb (°C)

(A)

Tmb (°C)

0 20015050 100

03aa15

120

Pder

(%)

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 4 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aad145

-1

1 10 10

(V)

(A)

Limit R

DSon

= V

/ I

100 ms

10 ms

1 ms

100 us

= 10 us

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 5 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base see Figure 4 - 0.4 1.03 K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aad142

-4

-3

-2

-1

-6

-5

-4

-3

-2

-1

1 10

(s)

th (j-mb)

(K/W)

single shot

0.02

0.05

0.1

0.2

δ = 0.5

δ =

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 6 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=25°C 30 - - V

ID=250µA; V

GS =0V; T

j=-55°C 27 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS = VGS; Tj=25°C;

see Figure 10 ; see Figure 11 1.3 1.7 2.15 V

ID=1mA; V

DS = VGS; Tj= 150 °C;

see Figure 10 0.65 - - V

ID=1mA; V

DS = VGS; Tj=-55°C;

see Figure 10 --2.45V

IDSS drain leakage current VDS =30V; V

GS =0V; T

j=25°C --1µA

VDS =30V; V

GS =0V; T

j= 150 °C - - 100 µA

IGSS gate leakage current VGS =15V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-15V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =4.5V; I

D=15A; T

j=25°C;

see Figure 17 - 1.43 1.95 mΩ

VGS =10V; I

D=15A; T

j= 100 °C;

see Figure 12 --1.8mΩ

VGS =10V; I

D=15A; T

j= 150 °C;

see Figure 12 -1.92.8mΩ

VGS =10V; I

D=15A; T

j=25°C;

see Figure 17 - 1.04 1.3 mΩ

RGgate resistance f = 1 MHz - 0.89 - Ω

Dynamic characteristics

QG(tot) total gate charge ID=25A; V

DS =12V; V

GS =10V;

see Figure 13 ; see Figure 14 - 100 - nC

ID=0A; V

DS =0V; V

GS =10V - 90 - nC

ID=25A; V

DS =12V; V

GS =4.5V;

see Figure 13 ; see Figure 14 - 46.6 - nC

QGS gate-source charge ID=25A; V

DS =12V; V

GS =4.5V;

see Figure 13 ; see Figure 14 - 17.9 - nC

QGS(th) pre-threshold

gate-source charge ID=25A; V

DS =12V; V

GS =4.5V;

see Figure 13 -11-nC

QGS(th-pl) post-threshold

gate-source charge -6.9-nC

QGD gate-drain charge ID=25A; V

DS =12V; V

GS =4.5V;

see Figure 13 ; see Figure 14 -9.3-nC

VGS(pl) gate-source plateau

voltage VDS =12V; see Figure 13; see Figure 14 -2.53-V

Ciss input capacitance VDS =12V; V

GS = 0 V; f = 1 MHz;

Tj=25°C; see Figure 15 - 6227 - pF

Coss output capacitance - 1415 - pF

Crss reverse transfer

capacitance - 619 - pF

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 7 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

td(on) turn-on delay time VDS =12V; R

L=0.5Ω; VGS =4.5V;

RG(ext) =5.6Ω

-64-ns

trrise time - 108 - ns

td(off) turn-off delay time - 106 - ns

tffall time - 52 - ns

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 16 - 0.88 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/s; VGS =0V;

VDS =20V -46-ns

Qrrecovered charge - 53 - nC

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

Fig 5. Drain-source on-state resistance as a function

of gate-source voltage; typical values. Fig 6. Input and reverse transfer capacitances as a

function of gate-source vo ltage; typical values

003aad147

0 5 10 15 20

(V)

(on)

(mΩ)

003aad152

-1

1 10

(V)

(pF)

iss

rss

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 8 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

Fig 7. Forward transcond uctance as a function of

drain current; typical values Fig 8. Outp ut ch ar a c t er is tics: drain current as a

function of drain-source voltage; typical values

Fig 9. Transfer characteristics: drain curre nt as a

function of gate-source voltage; typical

valuesvalues

Fig 10. Gate-source threshold voltage as a function of

junction temperature

003aad153

100

150

200

0 25 50 75 100

(A)

(S)

003aad144

100

0123

(V)

(A)

3.5

10 2.6

2.4

2.8V

(V) =

2.2

003aad148

100

0123

(V)

(A)

= 150 °C25 °C

Tj (°C)

-60 180120060

003aab272

0.5

1.5

VGS(th)

(V)

max

typ

min

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 9 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

Fig 11. Sub-threshold drain current as a function of

gate-source voltage Fig 12. Normalized drain-source on-state resistance

factor as a functio n of junction temperature

Fig 13. Gate charge waveform definitions

Fig 14. Gate-source voltag e as a function of gate

charge; typical values

003aab271

10-6

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

(A)

maxtypmin

03aa27

0.5

1.5

−60 0 60 120 180

Tj (°C)

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

003aad150

0 25 50 75 100

(nC)

(V)

= 12V

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 10 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 16. Source current as a function of source-drain

voltage; typical values

Fig 17. Drain-source on-state resis tance as a function of drain current; typical values

003aad151

-1

1 10 10

(V)

(pF)

iss

rss

oss

003aad149

100

0 0.25 0.5 0.75 1

(V)

(A)

= 150 °C25 °C

003aad146

2.5

7.5

0 25 50 75 100

(A)

DS(on)

(mΩ)

4.5

2.8

3.5

(V) = 2.6

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 11 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

7. Package outline

Fig 18. Package outline SOT1023; Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1023

sot1023_po

08-10-13

09-05-26

Unit

max

nom

min

1.10

0.95

0.15

0.00

0.50

0.35

4.41

3.62

0.25

0.19

0.30

0.24

4.45 5.30

4.95

1.27 0.25 0.1

Dimensions

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

lastic single-ended surface-mounted package (LFPAK2); 4 leads SOT102

A1bb

0.85

b2cc

1D(1)

4.70

4.45

D1(1) E(1) E1(1)

3.7

3.5

6.2

5.9

1.3

0.8

0.85

0.40

8°

0°

0 2.5 5 mm

scale

mounting

base

detail X

ewA

1234

(3×)

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 12 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

8. Revision history

Table 7. Revision history

Document ID Release da te Data sheet status Cha nge notice Supersedes

PSMN1R3-30YL_2 20090625 Product data sheet - PSMN2R3-30YL_1

Modifications: •Status changed from objective to product.

•Various changes to content.

PSMN1R3-30YL_1 20090528 Objective data sheet - -

PSMN1R3-30YL_2

Product data sheet Rev. 02 — 25 June 2009 13 of 14

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sh eet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — Nexperia products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the it em(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the object ive specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Nexperia PSMN1R3-30YL

N-channel 30 V 1.3 m Ω logic level MOSFET in LFPAK

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

25 June 2009