BSL205N OptiMOS(R)2 Small-Signal-Transistor Product Summary Features VDS * Dual N-channel RDS(on),max * Enhancement mode * Super Logic level (2.5V rated) 20 V VGS=4.5 V 50 mW VGS=2.5 V 85 ID 2.5 A * Avalanche rated * Qualified according to AEC Q101 PG-TSOP6 * Pb-free lead plating; RoHS compliant 6 5 4 * Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL205N PG-TSOP6 H6327: 3000 pcs/ reel sPK Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter (1) Symbol Conditions Continuous drain current ID Value T A=25 C 2.5 T A=70 C 2.0 10 Pulsed drain current I D,pulse T A=25 C Avalanche energy, single pulse E AS I D=2.5 A, R GS=25 W 10.8 Reverse diode dv /dt dv /dt I D=2.5 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C 6 Gate source voltage V GS Power dissipation(3) P tot Operating and storage temperature T j, T stg ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature A mJ kV/s 12 V 0.5 W -55 ... 150 C class 0 (<250V) 260 C IEC climatic category; DIN IEC 68-1 (1) Unit 55/150/56 Remark: one of both transistors in operation. Rev 2.3 page 1 2013-11-06 BSL205N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint(2) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 A 20 - - Gate threshold voltage V GS(th) V DS=VGS, I D=11 A 0.6 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 C - - 1 V DS=20 V, V GS=0 V, T j=150 C - - 100 V mA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=1.95 A - 62 85 mW V GS=4.5 V, I D=2.5 A - 39 50 |V DS|>2|I D|R DS(on)max, I D=2 A - 8.6 - Transconductance g fs S (2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mkm long; they are present on both sides of the PCB. Rev 2.3 page 2 2013-11-06 BSL205N Parameter Values Symbol Conditions Unit min. typ. max. - 315 419 - 114 152 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 16 24 Turn-on delay time t d(on) - 5.8 - Rise time tr - 2.9 - Turn-off delay time t d(off) - 11.0 - Fall time tf - 2.4 - Gate to source charge Q gs - 0.65 0.86 Gate to drain charge Q gd - 0.5 0.7 Gate charge total Qg - 2.1 3.2 Gate plateau voltage V plateau - 2 - V - - 0.5 A - - 10 - 0.8 1.1 V - 10 - ns - 2.2 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=2.5 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 T A=25 C V GS=0 V, I F=2.5 A, T j=25 C V R=10 V, I F=2.5 A, di F/dt =100 A/s page 3 2013-11-06 BSL205N 2 Drain current P tot=f(T A) I D=f(T A); V GS4.5 V 0.6 3 0.5 2.5 0.4 2 ID [A] Ptot [W] 1 Power dissipation 0.3 1.5 0.2 1 0.1 0.5 0 0 0 40 80 120 160 0 40 TA [C] 80 120 160 TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 103 0.5 101 10 s 100 s 102 0.2 1 ms 0.1 100 ID [A] ZthJA [K/W] 10 ms 10-1 0.05 101 0.02 0.01 DC single pulse 100 10-2 10-3 10-1 0.1 1 10 100 10-4 10-3 10-2 10-1 100 101 102 tp [s] VDS [V] Rev 2.3 10-5 page 4 2013-11-06 BSL205N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 10 100 4.5 V 3V 2.2 V 90 2.5 V 8 80 2.5 V 70 RDS(on) [mW] 2.4 V ID [A] 6 4 2.2 V 60 3V 50 3.5 V 4.5 V 40 6V 30 2 20 2V 10 1.8 V 0 0 0 1 2 3 0 2 4 VDS [V] 6 I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 4 20 3 15 gfs [S] ID [A] 8 Typ. forward transconductance 2 25 C 10 5 150 C 0 0 0 1 2 3 VGS [V] Rev 2.3 10 ID [A] 7 Typ. transfer characteristics 1 8 0 2 4 6 8 ID [A] page 5 2013-11-06 BSL205N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=11 A parameter: I D 100 1.6 80 98 % 60 98 % VGS(th) [V] RDS(on) [mW] 1.2 typ 40 typ 0.8 2% 0.4 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 25 C Ciss Coss IF [A] C [pF] 100 102 10-1 150 C 150 C, 98% 10-2 25 C, 98% Crss 101 10-3 0 5 10 15 20 VDS [V] Rev 2.3 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-11-06 BSL205N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=2.5 A pulsed parameter: T j(start) parameter: V DD 101 8 7 6 VGS [V] IAV [A] 100 C 100 10 V 5 25 C 125 C 4V 16 V 4 3 2 1 10-1 0 100 101 102 0 103 1 2 3 4 Qgate [nC] tAV [s] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 A 25 V GS 24 Qg 23 VBR(DSS) [V] 22 21 20 V gs(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q gate Q gd 140 Tj [C] Rev 2.3 page 7 2013-11-06 BSL205N Package Outline: TSOP6 Footprint: Packaging: Dimensions in mm Rev 2.3 page 8 2013-11-06 BSL205N Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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