TSD20H100CW - TSD20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 2 x 10 A VRRM 100 - 200 V IFSM 150 A TJ MAX 150 C 2 Package TO-263AB(D PAK) Configuration Dual die APPLICATIONS Lighting application Switching mode power supply (SMPS) Adapters On-board DC/DC converter MECHANICAL DATA 2 Case: TO-263AB(D PAK) Molding compound meets UL 94V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 mg (approximately) 2 TO-263AB(D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL Per device Forward current Per diode Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Critical rate of rise of off-state voltage 100CW TSD20H 100CW 100 Marking code on the device Repetitive peak reverse voltage TSD20H VRRM IF(AV) TSD20H TSD20H TSD20H 120CW 150CW 200CW TSD20H TSD20H TSD20H 120CW 150CW 200CW 120 150 200 20 10 UNIT V A IFSM 150 A dV/dt 10,000 V/s Junction temperature TJ -55 to +150 C Storage temperature TSTG -55 to +150 C 1 Version:E1705 TSD20H100CW - TSD20H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance RJL 3.8 C/W Junction-to-case thermal resistance RJC 2.8 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS TSD20H100CW TSD20H120CW diode (1) MAX UNIT IF = 5A, TJ = 25C 0.57 - V IF =10A, TJ = 25C 0.67 0.79 V IF = 5A, TJ = 125C 0.50 - V IF = 10A, TJ = 125C 0.59 0.68 V IF = 5A, TJ = 25C 0.62 - V IF =10A, TJ = 25C 0.78 0.87 V IF = 5A, TJ = 125C 0.53 TSD20H200CW Reverse current @ (2) V 0.63 - V 0.72 0.72 V IF =10A, TJ = 25C 0.81 0.90 V IF = 5A, TJ = 125C 0.58 - V IF = 10A, TJ = 125C 0.66 0.75 V IF = 5A, TJ = 25C 0.77 - V IF =10A, TJ = 25C 0.83 0.93 V IF = 5A, TJ = 125C 0.62 - V IF = 10A, TJ = 125C 0.68 0.78 V - 200 A 8 25 mA - 100 A 3 15 mA IF = 5A, TJ = 25C TSD20H150CW rated VR per diode TYP IF = 10A, TJ = 125C Forward voltage per SYMBOL TSD20H100CW TJ = 25C TSD20H120CW TJ = 125C TSD20H150CW TJ = 25C TSD20H200CW TJ = 125C VF IR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:E1705 TSD20H100CW - TSD20H200CW Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING PACKING CODE CODE SUFFIX TSD20HxxxCW C0 (Note 1 , 2) MN G PACKAGE PACKING 50 / Tube 2 D PAK 800 / 13" Plastic reel Notes: 1. "xxx" defines voltage from 100V (TSD20H100CW) to 200V (TSD20H200CW) 2. Whole series with green compound (halogen-free) EXAMPLE EXAMPLE P/N PART NO. TSD20H100CW C0G TSD20H100CW PACKING CODE PACKING CODE SUFFIX C0 G 3 DESCRIPTION AEC-Q101 qualified Green compound Version:E1705 TSD20H100CW - TSD20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 f=1.0MHz Vsig=50mVp-p 20 TSD20H100CW CAPACITANCE (pF) 15 10 1000 TSD20H120CW TSD20H200CW 100 5 TSD20H150CW WITH HEATSINK 3in x 5in x 0.25in Al-Plate 0 10 0 25 50 75 100 CASE TEMPERATURE 125 150 0.1 100 TJ=150oC 10 1 TJ=125oC TJ=100oC 0.1 0.01 0.001 TJ=25oC 0.0001 10 20 30 40 50 60 70 80 90 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSD20H100CW 1 10 REVERSE VOLTAGE (V) (oC) 100 100 10 TSD20H100CW 10 1 0.1 1 UF1DLW TJ=150oC TJ=125C TJ=125oC TJ=25C (A) AVERAGE FORWARD CURRENT (A) 25 TJ=100oC 0.01 0.1 TJ=25oC Pulse width 0.001 0.01 0.3 0.0 0.4 0.5 0.2 0.6 0.4 0.7 0.8 0.9 0.6 0.8 1 1.1 1.0 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version:E1705 1.2 TSD20H100CW - TSD20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.6 Typical Forward Characteristics TSD20H120CW TJ 1 TJ=125oC 0.1 TJ =100oC 0.01 0.001 TJ=25oC 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 TJ =150oC TJ=125oC 0.1 TJ=100oC 0.01 0.001 TJ=25oC 0.0001 20 0.1 1 30 40 50 60 70 80 90 TJ=25C TJ=125oC TJ=100oC 0.01 0.1 Pulse width TJ=25oC 0.001 0.01 0.3 0 0.4 0.5 0.2 0.6 0.7 0.4 0.8 0.9 0.6 1 0.8 1.1 1.2 1 Fig.8 Typical Forward Characteristics 10 10 TJ=150oC TJ=125C Typical Reverse Characteristics TSD20H150CW UF1DLW 10 1 FORWARD VOLTAGE (V) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 TSD20H120CW 100 10 TSD20H150CW UF1DLW 10 1 TJ=150oC TJ=125C TJ=125oC 0.1 1 TJ=100oC 0.01 0.1 TJ=25oC 0.001 0.01 0.3 0 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25C (A) 10 =150oC 100 10 (A) 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.5 Typical Reverse Characteristics 0.4 0.2 0.5 0.6 0.4 0.7 0.8 Pulse width 0.9 0.6 0.8 1 1.1 1 FORWARD VOLTAGE (V) 5 Version:E1705 1.2 TSD20H100CW - TSD20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.10 Typical Forward Characteristics 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.9 Typical Reverse Characteristics TSD20H200CW TJ=150oC 1 TJ=125oC 0.1 0.01 TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 100 10 TSD20H200CW UF1DLW 10 1 TJ=150oC TJ=125C 0.1 1 0.01 0.1 TJ=100oC TJ=25oC 0.001 0.01 0.3 0 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25C TJ=125oC 0.4 0.2 0.5 0.6 0.4 0.7 0.8 Pulse width 0.9 0.6 0.8 1 1.1 1 FORWARD VOLTAGE (V) 6 Version:E1705 1.2 TSD20H100CW - TSD20H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM 7 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version:E1705 TSD20H100CW - TSD20H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version:E1705 TSD20H100CW - TSD20H200CW Taiwan Semiconductor 9 Version:E1705