FMMT591TA - Diodes [Zetex]

Issue 4 - September 2007 1 www.zetex.com

FMMT591

Medium power PNP transistor in SOT23

Summary

BVCEO > -60V

BVEBO > -7V

IC(cont) = -1A

PD = 500mW

RCE(sat) = 295m at 1A

Complementary part number : FMMT491

Description

Medium power planar PNP bipolar transistor.

Features

•V

CE(sat) maximum specification reduction

• Reverse blocking specification improvement

Applications

• MOSFET gate driving

• Power switches

• Motor control

Ordering information

Device marking

591

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

FMMT591TA 7 8 3000

Pinout - top view

FMMT591

Issue 4 - September 2007 2 www.zetex.com

Absolute maximum ratings

Thermal resistance

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

Parameter Symbol Limit Unit

Collector-base voltage VCBO -80 V

Collector-emitter voltage VCEO -60 V

Emitter-base voltage VEBO -7 V

Continuous collector current(a) IC-1 A

Peak pulse current ICM -2 A

Power dissipation at TA =25°C(a) PD 500 mW

Linear derating factor 4 mW/°C

Operating and storage temperature range Tj, Tstg -55 to 150 °C

Parameter Symbol Value Unit

Junction to ambient(a) RJA 250 °C/W

FMMT591

Issue 4 - September 2007 3 www.zetex.com

Characteristics

FMMT591

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Electrical characteristics (at Tamb = 25°C unless otherwise stated).

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

voltage

BVCBO -80 V IC = -100A

Collector-emitter

breakdown voltage

BVCEO -60 V IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.

Emitter-base breakdown

voltage

BVEBO -7 -8.1 V IE = -100A

Collector cut-off current ICBO <1 -100 nA VCB = -60V

Collector – emitter current

cut-off current

ICES <1 -100 nA

Emitter cut-off current IEBO <1 -100 nA VEB = -5.6V

Collector-emitter

saturation voltage

VCE(sat) -155 -180 mV IC = -0.5A, IB = -50mA(*)

-295 -350 mV IC = -1A, IB = -100mA(*)

Base-emitter saturation

voltage

VBE(sat) 965 -1200 mV IC = -1A, IB = -100mA(*)

Base-emitter turn-on

voltage

VBE(on) 830 -1000 mV IC = -1A, VCE = -5V(*)

Static forward current

transfer ratio

hFE 100 220 IC = -1mA, VCE = -5V(*)

100 175 300

= -500mA, V

= -5V

(*)

80 155 IC = -1A, VCE = -5V

15 40 IC = -2A, VCE = -5V

Transition frequency fT150 MHz IC = -50mA, VCE = -10V

f = 100MHz

Output capacitance COBO 10 pF VCB = -10V, f = 1MHz(*)

FMMT591

Issue 4 - September 2007 5 www.zetex.com

Typical characteristics

VCE(sat) graphs represent MAX limit performance.

VCE(sat) -(V)

10A1A10mA 100mA

1mA

-55 °C

+25 °C

+100 °C

=10

CE(sat)

v I

-Collector Current

BE(sat)

v I

VBE(sat) - (V)

0.2

100mA10mA

0.4

0.6

0.8

1.0

10A

V I

-Collector Current

1mA 100mA10mA 10A

hFE - Typical Gain

100

300

200

400

10mA

1mA

-Collector Current

BE(on)

v I

100mA 1A 10A

VBE(on) - (V)

0.6

0.8

1.0

1.2

0.4

0.2

-Collector Current

CE(sat)

v I

VCE(sat) -(V)

1mA

0.1

100mA10mA

+25 ° C

0.2

0.3

0.4

0.5

=10

10A1A

+100 °C

-55 °C

+25 °C

+100 °C

-55 °C

+25 °C

-55 °C

+25 °C

+100 °C

=10

=5V

IC-Collector Current (A)

0.1

Safe Operating Area

- Collector Emitter Voltage (V)

0.1V 10V 100V

100ms

10ms

100us

1ms

1mA

0.01

=50

0.6

0.1

0.2

0.3

0.4

0.5

0.6

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Intentionally left blank

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Package outline - SOT23

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM

A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104

b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055

c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236

D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024

e 0.95 NOM 0.037 NOM - - - - -

3 leads

FMMT591

Issue 4 - September 2007 8 www.zetex.com

Zetex sales offices

Europe

Zetex GmbH

Kustermann-park

Balanstraße 59

D-81541 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Americas

Zetex Inc

700 Veterans Memorial Highway

Hauppauge, NY 11788

USA

Telephone: (1) 631 360 2222

Fax: (1) 631 360 8222

usa.sales@zetex.com

Asia Pacific

Zetex (Asia Ltd)

3701-04 Metroplaza Tower 1

Hing Fong Road, Kwai Fong

Hong Kong

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

Corporate Headquarters

Zetex Semiconductors plc

Zetex Technology Park, Chadderton

Oldham, OL9 9LL

United Kingdom

Telephone: (44) 161 622 4444

Fax: (44) 161 622 4446

hq@zetex.com

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