SEMIKRON INC 3bE D MM 4136671 O00ee70 7 MESEKG - SEMIKRON T2877) VasmiVaaM} (dv/ Itaws (maximum values for continuous operation) Vorm| dter 75 A | S5A | 75A | S5A Irav (sin. 180; Tease = 74C) vi viv 48A | 60A_ | 48A 60A 500} 400] 500 (Ske 41/04 D:SKKT 56/04 Dj SKKH 41/04 D|SKKH 56/04 D 700} 600] 500 {SKKT 41/06 olsxxr 56/06 D| SKKH 41/06 D| SKKH 56/06 D 900} 800 500 SKKT 41708 D SKKT 56/08 D| SKKH 41/08 D| SKKH 56/08 D 4300/1200; 500 |SKKT 41/12 D SKKT 56/12 D' SKKH 41/12 D|SKKH 56/12D 1000 SKKT 41/12 E: SKKT 56/12 E - - 41500} 1400 1000 [SkkT 41/14 E/SKKT 56/14 E/SKKH 41/14 E| SKKH 56/14 E 1700] 160011000 .SKKT 41/16 E. SKKT 56/16 E, SKKH 41/16 E| SKKH 56/16 E 1900) 1800 |1000 - SKKT 56/18 E - SKKH 56/18 E 12100] 2000 11000 - SKKT 56/20 E - SKKH 56/20 E SKKT 41 SKKT 56 Symbol | Conditions SKKH 41 SKKH 56 ITav sin. 180; (Tcase = ...) 48A(74C) | 60A(74C) 40A (85C) | 55A(80C) Ip B2/B6 |Tamb = 35C; P 3/180F| 85A/110A | 100A/130A IRMS W1/W3 |Tamb = 35C; P 3/180F | 105A/3x85 A]130A/X100A Itsm Ty = 25C 1000 A 1500 A Ty = 125C 850 A 1250 A *t Ty = 25C 5000 A2s | 11000 As Ty = 125C 3600 As 8000 As tod Ty = 25C: la=1A; die/dt=1A/ps| tps tgr Vo = 0,67: Vpam 2us (di/dtyer | Ty = 125C typ. 100 A/}s tq Ty = 125C typ. 80 ps lu Ty = 25C typ. 150 mA; max. 250 mA It Ty = 26C; Re = 30 typ. 300 mA; max. 600 mA Vr Ty = 25; lr= 200A max. 1,95V | max. 1,65V Vicroy | Ty = 125C 1V 0,9V rr Ty = 125C 4,5 mQ 3,5mQ Ino; IRD | Ty = 125C; Voo = Vor :VRo = Vanm | max. 15mA | max.15mA Ver |Ty= 25C:d.c. 3V lat Ty = 25C; dic. 150 mA Vap Ty = 125C; d.c. 0,25V lap Ty = 125C; dc. 6mA Rinjc cont. . 0,65/0,33 0,57/0,29 sin. 180 recy) permodule | 9 69/0,35 | 0.60/0,0 rac. 120 0,73/0,37 0,64/0,32 Rinch 0,2/0,1C/W Ty 40... +125 C Tstg - 40... +125 C Visot a.c.50Hz;r.m.s.;18/1min 3000 V ~ /2500 V ~ My Case to heatsink S| units/ 5Nm/44 lb. in. + 15%" Me Busbars to terminals | US units 3Nm/26 lb. in. + 15% a 5-9,81m/s* w approx. 120g Case page B 1-85 A5 (SKKT 41)| A5 (SKKT 56) A6 (SKKH 41)} A6 (SKKH 56) ') See the assembly instructions SEMIPACK 1 Thyristor/ Diode Modules SKKT 41 SKKH 41 SKKT 56 SKKH 56 ope bke Bh Bh SKKT SKKH Features e@ Heat transfer through ceramic isolated metal baseplate e Hard soldered joints for high reliability e@ ULrecognized, file no. E 63 532 Typical Applications @ DC motor control (e. g. for machine tools) @ Temperature control (e. g. for ovens, chemical processes) e Professional light dimming (studios, theaters) by SEMIKRON B1-33 dette tena pe maped AONE betty oe spam yne arin_SEMTKRON INC 3bE D MM 813672 OOD2271 9 MMSEKG T-25-17 100 100 - on | Ww 75 50 25 20 Prav we Pray * %0 ITaV 20 40 A 0. Tamb 50 100 Fig. 1a Power dissipation per thyristor vs. on-state current and ambient temperature 100 w 8 De thia\ -Clw Ww KKT 56 1,2 1,8 2SKKH 56 80 60 14 75 60 50 40 25 20 P TAY Pray 0 0 lyav 25 50 A 0 Tomb 50 100 150 Fig. 1b Power dissipation per thyristor vs. on-state current and ambient temperature 55 200 Ww Tease 1. SKKT a1 oy c/w Les SKKH 41 150 +78 i 85 : 100 r Los - L105 50 L148 ; Pytor loo, ee - c/w. - : . 0 L125 k 0 IRms 20 40 60 80 100 A 0. Tomb 50 100 Cc 150 : Fig. 2a Power dissipation per module vs. rms current and case temperature B1-34 by SEMIKRON jones3bE D WM 4136671 OO00ee27e O EESEKG SEMIKRON SEMIKRON INC 200 r 65 - Tease L 75 150 r | 85 + 95 1 12 L105 50 45 L 2 . L115 P 4 TOT Lo vTO ec; Cc 0 L125 IRMS 50 100 A Tamb 50 150 Fig. 2b Power dissipation per module vs. rms current and case temperature 55 400 w r Tease 2. SKKT 41 L 65 SKKH 41 L 300 + 75 85 200 | 95 0,6 L105 100 1 L L115 P 2 . ciw rc L125 Ip 20 40 60 80 100 A O Tomb 50 100 150 Fig. 3a Power dissipation of two modules vs. direct current and case temperature 400 65 w 2 SKKT 56 Rthea 0:1 0.05 OC/W } Tease e SKKH S56 75 300 F | 85 200 L 95 L105 100 5 His Pytor 2 log ciw 0 Lia 0 Ip 50 100 A 0 Tamb 50 100 Cc 150 Fig.3b Power dissipation of two modules vs. direct current and case temperature by SEMIKRON B1-35 reap woeSEMIKRON INC 3bE D MM 81356671 1-25-17 0002273 2 MESEKG 500 3. SKKT 41 SKKH 41 400 300 200 100 Pytor O Ip-Irms 50 100 AO L 65 | Tease + 75 Lo, Sciw Cc Tamb 50 100 150 Fig. 4a Power dissipation of three modules vs. direct and rms current and case temperature 600 w soo! B SKKT 56 *SKKH 56 400 300 200 100 Pytor %9 'p; lems 50 100 150 A Tomb 50 100 150 + 65 = 0,08 0.06 0,04 + Tease x 0,1 r 75 P 85 r 95 ft 105 Fis LC 125 Fig. 4b Power dissipation of three modules vs. direct and rms current and case temperature 400 yc KKT 41 200 1,8 = SKKH 41 100 60 40 20 10 6 Qn 4 1 St 2 4 10 20. 40-GOAjps 100 Fig. 5 a Recovered charge vs. current decrease B1-36 400 pe 7 1,SKKT S56 200/-2 SKKH 56 100 60 40 20 10 6 cr Q 47 dit i-sra2 4 6 10 20 = 40: GOA 100 Fig. 5b Recovered charge vs. current decrease by SEMIKRON. rma et he rt cece mh ge a atten en Angee soiree Piiasmemiets ved ection wemeermane i CO UT3bE D MM 8136671 poo2274 4 BESEKG SEMIKRON INC SEMIKRON ~ O8 0.6 04 a2 (tht mn 072 107! 10 10" s 10? Fig.6 a Transient thermal impedance vs. time 1,0 26 Ww 1, SKKT 41 0.9 2"SKKH 41 0,8 0,7 [Rahjc|cont."9:85 C/W 0.6 Rthic 0,8 0 30 60 g0 120 150 = 180 Fig. 7a Thermal resistance vs. conduction angle 250 A KKT 41 KKH 41 200 150 100 50 Tyj 0125 125 25 C iy A) vy OS 1 "5 2 VY 26 Fig. 8a On-state characteristics T-25-17 2IP _ 08 06 0,4 Q2 Zine 0 w3t 10-2 10-t 10 tol s 10? Fig. 6 b Transient thermal impedance vs. time . 56 SKKH 56 jin. 20,57 C/W. Rihjc 0,5 0 @ 30 60 90 420 ~= 150 ~ 180 Fig. 7b Thermal resistance vs. conduction angle 250 A ,SKKT 56 1 2 SKKH SG 200 150 100 Tyj 7125 125 25 OC 50 it Ov, O86 1 15 2 VV 25 Fig. 8b On-state characteristics by SEMIKRON B1-37 tee mee mee oT vee meee a ahspn a Wyn eae [Un Mey tice ercetin eineSEMIKRON INC 3bE D MM 4136671 0002275 & EESEKG 'rlov) - TSM 1,8 Itsm(A} #28 C ITyj= 125 C 16 1,SKKT 41 2SKKH 41; | 1000 850 1,SKKT 56 14 2SKKH 86{}| 1500 1250 08 06 04 10 +t 10! 102 ms 103 Fig. 9 Surge overload current vs. time 3 ,SKKT 41 SKKH 41 .SKKT 56 SKKH 56 =1 10" Ig 2 3.45 23465 10 2345 2 3465 10 2345 A10? Fig. 10 Gate trigger characteristics B1-38 by SEMIKRON periment aman ty