S-1009C20I-M5T1U - Seiko Instruments USA, Inc.

S-1009 Series

www.sii-ic.com

SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE

DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)

Seiko Instruments Inc. 1

The S-1009 Series is a super high-accuracy voltage detector developed using CMOS process. The detection voltage is

fixed internally with an accuracy of ±0.5%. It operates with super lo w current consum pti on of 2 70 nA typ.

The release signal can be delayed by setting a capacitor externally. Delay time accuracy is ±15%. Two output forms Nch

open drain and CMOS output are av ai lable.

Compared with convent ional CMOS voltage detectors, th e S-1009 Series is the most suita ble for the portable devic es due

to the super-low current consumption, su per high-acc urac y and sm all pac kages.

 Features

• Super-low current consumpti on 270 nA typ. (1.2 V ≤ −VDET < 2.3 V)

• Super high-accurac y detecti on voltag e ±0.5% (2.4 V ≤ −VDET ≤ 4.6 V)

±12 mV (0.8 V ≤ −VDET < 2.4 V)

• Operating voltage r ange 0.6 V to 10.0 V (CMOS output products)

• Hysteresis characteristics 5% ±1%

• Delay time accuracy ±15% (CD = 4.7 nF)

• Detection voltage 0.8 V to 4.6 V (0.1 V step)

• Output form Nch open drain output (Active “L”)

CMOS output (Active “L”)

• Lead-free (Sn 100%), halo gen-free *1

*1. Refer to “ Product Name Structure” for details.

 Applications

• Power monitor and reset for CPUs a nd micr ocomputers

• Constant voltage power monitor for TVs, DVD recorders an d hom e appl ia nces

• Power supply monitor for por table dev ices s uch as notebo ok PCs, digita l still cam eras and mo bile p hones

 Packages

• SC-82AB

• SOT-23-5

• SNT-4A

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Block Diagrams

1. Nch open drain output products

VSS

REF

−

OUT

VDD

Delay

circuit

*1. Parasitic diode

Figure 1

2. CMOS output products

VSS

REF

−

OUT

VDD

Delay

circuit

*1. Parasitic diode

Figure 2

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 3

 Product Name Structure

Users can select the detection voltage value, output form, and package type for the S-1009 Series. Refer to “1.

Product name” regarding the contents of product name, “2. Packages” regarding the package drawings and “3.

Product name list” regarding details of product nam e.

1. Product name

S-1009 x xx I − xxxx U

Output form

N: Nch open drain output (Active “L”)

C: CMOS output (Active “L”)

Package abbreviation and IC packing specifications*1

N4T1: SC-82AB, Tape

M5T1: SOT-23-5, Tape

I4T1: SNT-4A, Tape

Detection voltage value

08 to 46

(e.g., when the detection voltage is 1.5 V, it is expressed as 15.)

Environmental code

U: Lead-free (Sn 100%), halogen-free

*1. Refer to the tape specifications.

2. Packages

Drawing code

Package name Package Tape Reel Land

SC-82AB NP004-A-P-SD

NP004-A-C-SD

NP004-A-C-S1 NP004-A-R-SD −

SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD −

SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

3. Product name list

3. 1 Nch open drain output products

Table 1

Detection volta ge SC-82AB SOT-23-5 SNT-4A

0.8 V ± 12 mV S-1009N08I-N 4T 1U S-1009N08I-M5T 1U S-1009N08I-I4T1U

0.9 V ± 12 mV S-1009N09I-N 4T 1U S-1009N09I-M5T 1U S-1009N09I-I4T1U

1.0 V ± 12 mV S-1009N10I-N 4T 1U S-1009N10I-M5T 1U S-1009N10I-I4T1U

1.1 V ± 12 mV S-1009N11I-N 4T 1U S-1009N11I-M5T 1U S-1009N11I-I4T1U

1.2 V ± 12 mV S-1009N12I-N 4T 1U S-1009N12I-M5T 1U S-1009N12I-I4T1U

1.3 V ± 12 mV S-1009N13I-N 4T 1U S-1009N13I-M5T 1U S-1009N13I-I4T1U

1.4 V ± 12 mV S-1009N14I-N 4T 1U S-1009N14I-M5T 1U S-1009N14I-I4T1U

1.5 V ± 12 mV S-1009N15I-N 4T 1U S-1009N15I-M5T 1U S-1009N15I-I4T1U

1.6 V ± 12 mV S-1009N16I-N 4T 1U S-1009N16I-M5T 1U S-1009N16I-I4T1U

1.7 V ± 12 mV S-1009N17I-N 4T 1U S-1009N17I-M5T 1U S-1009N17I-I4T1U

1.8 V ± 12 mV S-1009N18I-N 4T 1U S-1009N18I-M5T 1U S-1009N18I-I4T1U

1.9 V ± 12 mV S-1009N19I-N 4T 1U S-1009N19I-M5T 1U S-1009N19I-I4T1U

2.0 V ± 12 mV S-1009N20I-N 4T 1U S-1009N20I-M5T 1U S-1009N20I-I4T1U

2.1 V ± 12 mV S-1009N21I-N 4T 1U S-1009N21I-M5T 1U S-1009N21I-I4T1U

2.2 V ± 12 mV S-1009N22I-N 4T 1U S-1009N22I-M5T 1U S-1009N22I-I4T1U

2.3 V ± 12 mV S-1009N23I-N 4T 1U S-1009N23I-M5T 1U S-1009N23I-I4T1U

2.4 V ± 0.5% S-1009N24I-N 4T 1U S-1009N24I-M5T 1U S-1009N24I-I4T1U

2.5 V ± 0.5% S-1009N25I-N 4T 1U S-1009N25I-M5T 1U S-1009N25I-I4T1U

2.6 V ± 0.5% S-1009N26I-N 4T 1U S-1009N26I-M5T 1U S-1009N26I-I4T1U

2.7 V ± 0.5% S-1009N27I-N 4T 1U S-1009N27I-M5T 1U S-1009N27I-I4T1U

2.8 V ± 0.5% S-1009N28I-N 4T 1U S-1009N28I-M5T 1U S-1009N28I-I4T1U

2.9 V ± 0.5% S-1009N29I-N 4T 1U S-1009N29I-M5T 1U S-1009N29I-I4T1U

3.0 V ± 0.5% S-1009N30I-N 4T 1U S-1009N30I-M5T 1U S-1009N30I-I4T1U

3.1 V ± 0.5% S-1009N31I-N 4T 1U S-1009N31I-M5T 1U S-1009N31I-I4T1U

3.2 V ± 0.5% S-1009N32I-N 4T 1U S-1009N32I-M5T 1U S-1009N32I-I4T1U

3.3 V ± 0.5% S-1009N33I-N 4T 1U S-1009N33I-M5T 1U S-1009N33I-I4T1U

3.4 V ± 0.5% S-1009N34I-N 4T 1U S-1009N34I-M5T 1U S-1009N34I-I4T1U

3.5 V ± 0.5% S-1009N35I-N 4T 1U S-1009N35I-M5T 1U S-1009N35I-I4T1U

3.6 V ± 0.5% S-1009N36I-N 4T 1U S-1009N36I-M5T 1U S-1009N36I-I4T1U

3.7 V ± 0.5% S-1009N37I-N 4T 1U S-1009N37I-M5T 1U S-1009N37I-I4T1U

3.8 V ± 0.5% S-1009N38I-N 4T 1U S-1009N38I-M5T 1U S-1009N38I-I4T1U

3.9 V ± 0.5% S-1009N39I-N 4T 1U S-1009N39I-M5T 1U S-1009N39I-I4T1U

4.0 V ± 0.5% S-1009N40I-N 4T 1U S-1009N40I-M5T 1U S-1009N40I-I4T1U

4.1 V ± 0.5% S-1009N41I-N 4T 1U S-1009N41I-M5T 1U S-1009N41I-I4T1U

4.2 V ± 0.5% S-1009N42I-N 4T 1U S-1009N42I-M5T 1U S-1009N42I-I4T1U

4.3 V ± 0.5% S-1009N43I-N 4T 1U S-1009N43I-M5T 1U S-1009N43I-I4T1U

4.4 V ± 0.5% S-1009N44I-N 4T 1U S-1009N44I-M5T 1U S-1009N44I-I4T1U

4.5 V ± 0.5% S-1009N45I-N 4T 1U S-1009N45I-M5T 1U S-1009N45I-I4T1U

4.6 V ± 0.5% S-1009N46I-N 4T 1U S-1009N46I-M5T 1U S-1009N46I-I4T1U

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 5

3. 2 CMOS output products

Table 2

Detection volta ge SC-82AB SOT-23-5 SNT-4A

0.8 V ± 12 mV S-1009C08I- N 4T 1U S-1009C08I-M5T 1U S-1009C08I-I4T 1U

0.9 V ± 12 mV S-1009C09I- N 4T 1U S-1009C09I-M5T 1U S-1009C09I-I4T 1U

1.0 V ± 12 mV S-1009C10I- N 4T 1U S-1009C10I-M5T 1U S-1009C10I-I4T 1U

1.1 V ± 12 mV S-1009C11I- N 4T 1U S-1009C11I-M5T 1U S-1009C11I-I4T 1U

1.2 V ± 12 mV S-1009C12I- N 4T 1U S-1009C12I-M5T 1U S-1009C12I-I4T 1U

1.3 V ± 12 mV S-1009C13I- N 4T 1U S-1009C13I-M5T 1U S-1009C13I-I4T 1U

1.4 V ± 12 mV S-1009C14I- N 4T 1U S-1009C14I-M5T 1U S-1009C14I-I4T 1U

1.5 V ± 12 mV S-1009C15I- N 4T 1U S-1009C15I-M5T 1U S-1009C15I-I4T 1U

1.6 V ± 12 mV S-1009C16I- N 4T 1U S-1009C16I-M5T 1U S-1009C16I-I4T 1U

1.7 V ± 12 mV S-1009C17I- N 4T 1U S-1009C17I-M5T 1U S-1009C17I-I4T 1U

1.8 V ± 12 mV S-1009C18I- N 4T 1U S-1009C18I-M5T 1U S-1009C18I-I4T 1U

1.9 V ± 12 mV S-1009C19I- N 4T 1U S-1009C19I-M5T 1U S-1009C19I-I4T 1U

2.0 V ± 12 mV S-1009C20I- N 4T 1U S-1009C20I-M5T 1U S-1009C20I-I4T 1U

2.1 V ± 12 mV S-1009C21I- N 4T 1U S-1009C21I-M5T 1U S-1009C21I-I4T 1U

2.2 V ± 12 mV S-1009C22I- N 4T 1U S-1009C22I-M5T 1U S-1009C22I-I4T 1U

2.3 V ± 12 mV S-1009C23I- N 4T 1U S-1009C23I-M5T 1U S-1009C23I-I4T 1U

2.4 V ± 0.5% S-1009C24I - N4T1U S-1009C24I-M5T1U S-1009C24I-I4T1U

2.5 V ± 0.5% S-1009C25I - N4T1U S-1009C25I-M5T1U S-1009C25I-I4T1U

2.6 V ± 0.5% S-1009C26I - N4T1U S-1009C26I-M5T1U S-1009C26I-I4T1U

2.7 V ± 0.5% S-1009C27I - N4T1U S-1009C27I-M5T1U S-1009C27I-I4T1U

2.8 V ± 0.5% S-1009C28I - N4T1U S-1009C28I-M5T1U S-1009C28I-I4T1U

2.9 V ± 0.5% S-1009C29I - N4T1U S-1009C29I-M5T1U S-1009C29I-I4T1U

3.0 V ± 0.5% S-1009C30I - N4T1U S-1009C30I-M5T1U S-1009C30I-I4T1U

3.1 V ± 0.5% S-1009C31I - N4T1U S-1009C31I-M5T1U S-1009C31I-I4T1U

3.2 V ± 0.5% S-1009C32I - N4T1U S-1009C32I-M5T1U S-1009C32I-I4T1U

3.3 V ± 0.5% S-1009C33I - N4T1U S-1009C33I-M5T1U S-1009C33I-I4T1U

3.4 V ± 0.5% S-1009C34I - N4T1U S-1009C34I-M5T1U S-1009C34I-I4T1U

3.5 V ± 0.5% S-1009C35I - N4T1U S-1009C35I-M5T1U S-1009C35I-I4T1U

3.6 V ± 0.5% S-1009C36I - N4T1U S-1009C36I-M5T1U S-1009C36I-I4T1U

3.7 V ± 0.5% S-1009C37I - N4T1U S-1009C37I-M5T1U S-1009C37I-I4T1U

3.8 V ± 0.5% S-1009C38I - N4T1U S-1009C38I-M5T1U S-1009C38I-I4T1U

3.9 V ± 0.5% S-1009C39I - N4T1U S-1009C39I-M5T1U S-1009C39I-I4T1U

4.0 V ± 0.5% S-1009C40I - N4T1U S-1009C40I-M5T1U S-1009C40I-I4T1U

4.1 V ± 0.5% S-1009C41I - N4T1U S-1009C41I-M5T1U S-1009C41I-I4T1U

4.2 V ± 0.5% S-1009C42I - N4T1U S-1009C42I-M5T1U S-1009C42I-I4T1U

4.3 V ± 0.5% S-1009C43I - N4T1U S-1009C43I-M5T1U S-1009C43I-I4T1U

4.4 V ± 0.5% S-1009C44I - N4T1U S-1009C44I-M5T1U S-1009C44I-I4T1U

4.5 V ± 0.5% S-1009C45I - N4T1U S-1009C45I-M5T1U S-1009C45I-I4T1U

4.6 V ± 0.5% S-1009C46I - N4T1U S-1009C46I-M5T1U S-1009C46I-I4T1U

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Pin Configurations

1. SC-82AB

Table 3

Pin No. Symbol Description

1 VSS GND pin

2 VDD Input voltage p in

3 CD Connection pi n for del ay cap ac itor

4 OUT Voltage detecti on out put p in

4 3

1 2

SC-82AB

Top view

Figure 3

2. SOT-23-5

Table 4

Pin No. Symbol Description

1 OUT Voltage detecti on out put p in

2 VDD Input voltage p in

3 VSS GND pin

NC*1 No connection

5 CD Connection pi n for del ay cap ac itor

*1. The NC pin is electr ical l y open.

The NC pin can be c onn ecte d t o VDD or VSS.

5 4

1 3 2

SOT-23-5

Top view

Figure 4

3. SNT-4A

Table 5

Pin No. Symbol Description

1 VSS GND pin

2 OUT Voltage detecti on out put p in

3 CD Connection pi n for del ay cap ac itor

4 VDD Input voltage p in

SNT-4A

Top view

1 4

2 3

Figure 5

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 7

 Absolute Maximum Ratings

Table 6

(Ta = +25°C unless other wise specifie d)

Item Symbol Absolute Maximum Rating Unit

Power supply voltage VDD−VSS 12 V

CD pin input volt a ge VCD V

SS − 0.3 to VDD + 0.3 V

Nch open drain output products VSS − 0.3 to 12.0 V

Output voltage CMOS outp ut prod ucts VOUT VSS − 0.3 to VDD + 0.3 V

Output current IOUT 50 mA

SC-82AB 350*1 mW

SOT-23-5 600*1 mW

Power dissipation SNT-4A PD 300*1 mW

Operating ambient tem peratu re Topr −40 to +85 °C

Storage temperat ure Tstg −40 to +125 °C

*1. When mounted on bo ar d

[Mounted board]

(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm

(2) Name: JEDEC STANDARD51-7

Caution The absolute maximum ratings are rated values exceeding which the product could suffer

physical damage. These values must therefore not be exceeded under any conditions.

0 50 100 150

Power Dissipation (PD) [mW]

Ambient Temperature (Ta) [°C]

200

100

300

500

700

SOT-23-5

SC-82AB

400

600

SNT-4A

Figure 6 Power Dissip atio n o f Packag e (W hen moun ted o n bo ard )

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Electrical Characteristics

1. Nch open drain output products

Table 7 (Ta = +25°C unless otherwise specified)

Item Symbol Conditions Min. Typ. Max. Unit

Test

Circuit

0.8 V ≤ −VDET < 2.4 V −VDET(S)

− 0.012 −VDET(S) −VDET(S)

+ 0.012 V 1

Detection volta ge*1 −VDET 2.4 V ≤ −VDET ≤ 4.6 V −VDET(S)

× 0.995 −VDET(S) −VDET(S)

× 1.005 V 1

Hysteresis width VHYS − −VDET

× 0.04 −VDET

× 0.05 −VDET

× 0.06 V 1

0.8 V ≤ −VDET < 1.2 V − 0.30 0.90 μA 2

1.2 V ≤ −VDET < 2.3 V − 0.27 0.90 μA 2

2.3 V ≤ −VDET < 3.6 V − 0.42 0.90 μA 2

Current

consumption ISS V

DD = +VDET + 0.6 V

3.6 V ≤ −VDET ≤ 4.6 V − 0.39 0.90 μA 2

Operating volt age VDD − 0.7 − 10.0 V 1

VDD = 0.7 V

S-1009N08 to 14 0.14 0.40 − mA 3

VDD = 1.2 V

S-1009N15 to 46 0.73 1.33 − mA 3

Output current IOUT Output trans ist or,

Nch,

VDS = 0.5 V VDD = 2.4 V

S-1009N27 to 46 1.47 2.39 − mA 3

Leakage curre nt ILEAK Output tr ansistor, Nch,

VDD = 10.0 V, VOUT = 10.0 V − − 0.08 μA 3

Delay time tD C

D = 4.7 nF 22.1 26.0 29.9 ms 4

0.8 V ≤ −VDET < 0.9 V − ±180 ±430 ppm/°C 1

0.9 V ≤ −VDET < 1.2 V − ±120 ±370 ppm/°C 1

Detection volta ge

temperature

coefficient*2

Δ−VDET

ΔTa • −VDET Ta = −40°C to +85°C 1.2 V ≤ −VDET ≤ 4. 6 V − ±100 ±350 ppm/°C 1

*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection

voltage range i n Table 1.)

*2. The temperatu re cha nge of th e dete ct io n volt age [mV/ °C] is calcu late d b y usin g the f oll o wing eq uat ion.

Δ − VDET

ΔTa []

mV/°C *1 = −VDET(S)(typ.)[]

V*2 × Δ − VDET

ΔTa • −VDET []

ppm/°C *3 ÷ 1000

*1. Temperature c hange o f the det ecti on volta ge

*2. Specified d etect i on v olta ge

*3. Detection voltag e tem perature coeffi cient

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 9

2. CMOS output products

Table 8 (Ta = +25°C unless otherwise specified)

Item Symbol Conditions Min. Typ. Max. Unit

Test

Circuit

0.8 V ≤ −VDET < 2.4 V −VDET(S)

− 0.012 −VDET(S) −VDET(S)

+ 0.012 V 1

Detection volta ge*1 −VDET 2.4 V ≤ −VDET ≤ 4.6 V −VDET(S)

× 0.995 −VDET(S) −VDET(S)

× 1.005 V 1

Hysteresis width VHYS − −VDET

× 0.04 −VDET

× 0.05 −VDET

× 0.06 V 1

0.8 V ≤ −VDET < 1.2 V − 0.30 0.90 μA 2

1.2 V ≤ −VDET < 2.3 V − 0.27 0.90 μA 2

2.3 V ≤ −VDET < 3.6 V − 0.42 0.90 μA 2

Current

consumption ISS V

DD = +VDET + 0.6 V

3.6 V ≤ −VDET ≤ 4.6 V − 0.39 0.90 μA 2

Operating volt age VDD − 0.6 − 10.0 V 1

VDD = 0.7 V

S-1009C08 to 14 0.14 0.40 − mA 3

VDD = 1.2 V

S-1009C15 to 46 0.73 1.33 − mA 3

Output transist or,

Nch,

VDS = 0.5 V VDD = 2.4 V

S-1009C27 to 46 1.47 2.39 − mA 3

VDD = 4.8 V

S-1009C08 to 39 1.62 2.60 − mA 5

Output current IOUT

Output transist or,

Pch,

VDS = 0.5 V VDD = 6.0 V

S-1009C40 to 46 1.78 2.86 − mA 5

Delay time tD C

D = 4.7 nF 22.1 26.0 29.9 ms 4

0.8 V ≤ −VDET < 0.9 V − ±180 ±430 ppm/°C 1

0.9 V ≤ −VDET < 1.2 V − ±120 ±370 ppm/°C 1

Detection volta ge

temperature

coefficient*2

Δ−VDET

ΔTa • −VDET Ta = −40°C to +85°C 1.2 V ≤ −VDET ≤ 4. 6 V − ±100 ±350 ppm/°C 1

*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection

voltage range i n Table 2.)

*2. The temperatu re cha nge of th e dete ct io n volt age [mV/ °C] is calcu late d b y usin g the f oll o wing eq uat ion.

Δ − VDET

ΔTa []

mV/°C *1 = −VDET(S)(typ.)[]

V*2 × Δ − VDET

ΔTa • −VDET []

ppm/°C *3 ÷ 1000

*1. Temperature c hange o f the det ecti on volta ge

*2. Specified d etect i on v olta ge

*3. Detection voltag e tem perature coeffi cient

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Test Circuits

S-1009

Series

VDD

VSS

OUT

R*1

100 kΩ

S-1009

Series

VDD OUT

VDD

VSS CD

*1. R is unnecessary for CM OS out put pr o ducts .

Figure 7 Figure 8

VDS

VDD OUT AV

VDD

VSS CD

S-1009

Series

S-1009

Series

VDD

VSS

OUT

R*1

100 kΩ

Oscilloscope

P.G.

*1. R is unnecessary for CM OS out put pr oduct s. *1. R is unnecessar y for CM OS out put pr o duct s.

Figure 9 Figure 10

VDD

VDS

OUT AV

VDD

VSS CD

S-1009

Series

Figure 11

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Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 11

 Timing Chart

1. Nch open drain output products

OUT

VDD

VSS

100 kΩ

Release voltage (+VDET)

Detection voltage (−VDET)

VDD

VSS

Minimum operating voltage

Hysteresis width

(VHYS)

VDD

VSS

Output from the OUT pin

Figure 12

2. CMOS output products

VDD

VSS

Release voltage (+VDET)

Detection voltage (−VDET)

VDD

VSS

Minimum operating voltage

Hysteresis width

(VHYS)

Output from the OUT pin

VSS

VDD

OUT CD

Remark When VDD is the min imum operati ng voltage or les s, the ou tput voltag e from the OUT pin is indefi nite

in the shaded area.

Figure 13

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Operation

1. Basic operation: CMOS output (Active “L”)

(1) When the power supply voltage (VDD) is the release voltage (+VDET) or more, the Nch transistor is OFF and

the Pch transis tor is ON to ou tput VDD (“H”). Since the Nch transist or N1 in Figure 14 is OFF, the comp arator

input voltage is (RB + RC ) • VDD

RA + RB + RC .

(2) Although VDD decreases to +VDET or less, the output is VDD when VDD is the detection voltage ( −VDET) or more.

When VDD decreases to −VDET or less (A in Figure 15), the Nch transistor is ON and the Pch transistor is

OFF so that VSS is output. The Nch transistor N1 in Figure 14 is turned on, and the input voltage to the

comparator is RB • VDD

RA + RB .

(3) The output is indefinite by decreasing VDD to the IC’s minimum operating voltage or less. If the output is

pulled up, it will be VDD.

(4) VSS is output by increasing VDD to t he minimum operatin g voltage or more. Alth ough VDD exceeds −VDET and

VDD is less than +VDET, the output is VSS.

(5) When increasing VDD to +VDET or more (B in Figure 15), the Nch transistor is OFF and the Pch transistor is

ON so that VDD is output. VDD output to the O UT pin del a ys i n tD by the delay circuit.

VSS

REF

−

OUT

VDD

Delay

circuit

Pch

Nch

*1. Parasiteic dio de

Figure 14 Operation 1

Hysteresis width

HYS

) ABV

Minimum operating voltage

Output from OUT pin

(1) (2) (3) (5) (4)

Release voltage (+V

DET

)

Detection voltage (−V

DET

)

Figure 15 Operation 2

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2. Delay Circuit

The delay circuit delays the output signal to the OUT pin from the time at which the power voltage (VDD) exceeds

the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when VDD decreases to the

detection volt a ge (−VDET) or less (Refer to Figure 15).

The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA) and the

attached exter nal capacitor (CD), or the d elay time (tD0) when the CD pin is open, and calculat ed from the follo wing

equation.

tD [ms] = Delay coefficient × CD [nF] + tD0 [ms]

Delay coefficient (+85°C) : Min. 2.82, Typ. 4. 20, Max. 5. 72

Delay coefficient (+25°C) : Min. 4.70, Typ. 5. 47, Max. 6. 24

Delay coefficient (−40°C) : Min. 5.64, Typ. 8. 40, Max. 1 2.01

D0 (−40°C to +85°C) : Min. 0.01 ms, T yp. 0.10 ms, Ma x. 0.24 ms

When the CD value is sufficiently large, the tD0 value can be disreg ard ed.

Caution 1. When the CD pin is open, a double pulse shown in Figure 16 may appear at release.

To avoid the double pulse, attach 100 pF or larger capacitor to the CD pin. Do not apply

voltage to the CD pi n fro m the exteri or.

VOUT

Time

Figure 16

2. Print circuit board layout should be made in such a way that no current flows into or flows

from the CD pin since the impedance of the CD pin is high, otherwise correct delay time

cannot be provided.

3. There is no limit for the capacitance of the external capacitor (CD) as long as the leakage

current of the capacitor can be ignored against the built-in constant current value. Leakage

current causes deviation in delay time. When the leakage current is larger than the built-in

constant curr ent, no releas e tak es pl ac e.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

3. Other characteristics

3. 1 T emp er ature ch ara ct eri stic s of detecti on voltag e

The shaded area in Figure 17 shows the temperature characteristics of the detection voltage in the operating

temperature r a nge.

−40 25

+0.945 mV/°C

−V

DET

[V]

85 Ta [°C]

−0.945 mV/°C

−V

DET25*1

*1. −VDET25 is an actu al det ect ion vo lta ge v alu e at +25°C.

Figure 17 Temperature ch ara cte risti cs o f detecti on volt age (Exam pl e for −VDET = 2.7 V)

3. 2 T emp er atu re ch ara ct eristi c s of release voltag e

The temperature change Δ + VDET

ΔTa of the release voltage is calculated by using the temperature change

Δ − VDET

ΔTa of the detect ion vo lt age as follows:

Δ + VDET

ΔTa = +VDET

−VDET × Δ − VDET

ΔTa

The temperatur e chang e of th e rel eas e volt a ge a nd t he detection volt ag e has th e same sign c ons eq uent l y.

3. 3 T emp er atu re ch ara ct eristi c s of h yster esi s voltage

The temperat ure change of the h ysteresis volta ge is expressed as Δ + VDET

ΔTa − Δ − VDET

ΔTa and is calculated as

follows:

Δ + VDET

ΔTa − Δ − VDET

ΔTa = VHYS

−VDET × Δ − VDET

ΔTa

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 15

 Standard Circuit

VDD

OUT

VSS

R*1

100 kΩ

CD*2

*1. R is unnecessary for CM OS out put pr oduct s.

*2. The delay capacit or (CD) shou ld be co n necte d dir ect l y t o the CD p in and to t h e VS S pin.

Figure 18

Caution The abo ve co n necti on di agram and co nstan t w ill no t guaran tee su c cessfu l op erati on .

Perform thorough evaluation using the actual application to set the constant.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Explanation of Terms

1. Detection voltage (−VDET), release voltage (+VDET)

The detection voltage (−VDET) is a voltage at which the output turns to “L”. The detection voltage varies slightly

among products of the same specification. The variation of detection voltage between the specified minimum

(−VDET) Min. and the m axim u m (−VDET) Max. is called the d etect ion vo ltag e ran ge (Ref er to Figure 19).

Example: In the S-1009C15, t h e det ec t ion vo lt age is eit h er one in t h e range of 1. 4 88 ≤ (−VDET) ≤ 1.512.

This means that some S-100 9C15s h ave −VDET = 1.488 V and some h av e −VDET = 1.512 V.

The release voltage is a voltage at which the output turns to “H”. The release voltage varies slightly among

products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min.

and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 20). The range is calculated

from the actual det ecti on vo lt age (−VDET) of a product a nd i s in t he rang e of −VDET × 1.04 ≤ +VDET ≤ −VDET × 1. 06.

Example: F or the S-1 00 9 C15, t he rel ea se volt age is ei t her on e in t he range of 1. 548 ≤ (+VDET) ≤ 1.602.

This means that some S-100 9C15s h ave +VDET = 1.548 V and some h av e +VDET = 1.602 V.

Detect i on volta g e

range

(−V

DET

) Min.

(−V

DET

) Max.

OUT

Release voltage

Release

voltage range

(+V

DET

) Min.

(+V

DET

) Max.

OUT

Delay time

Figure 19 Detection voltage (CMOS output products) Figure 20 Release voltage (CMOS output products)

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

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Seiko Instruments Inc. 17

2. Hysteresis width (VHYS)

The hysteresis width is t he vo ltag e dif fer enc e between the det ecti on v olt age a nd t he rel e ase vo ltag e (T he volt ag e a t

point B − The voltage at point A = VHYS in Figure 15). Setting the hysteresis width between the detection voltage

and the releas e volt age, pr ev ent s malf unct i on ca used b y noise on the input voltage.

3. Delay Time (tD)

The delay time in the S-1009 Serie s is a period from t he input volt age to the VDD pin e xceeding the re lease voltage

(+VDET) until the out put from t he OUT pin inv erts. T he dela y t ime chang es accor ding t o th e exter nal c ap acitor (CD).

OUT

DET

Figure 21 Delay time

4. Through-type current

Through-type current is a current that flows instantaneously at the time of detection and release of a voltage

detector. T he through-type current is l arge in CMOS out put prod ucts, smal l in Nc h op en dr ain outp ut pro duct s.

5. Oscillation

In applications where a resistor is connected to the voltage detector input (Figure 22), taking a CMOS active “L”

product for example, the through-type current which is generated when the output goes from “L” to “H” (release)

causes a voltage drop equal to [through-type current] × [input resistance] across the resistor. When the input

voltage drops below the detect ion voltage (−VDET) as a result, the o utput voltage goes t o low level. In this st ate, the

through-type current stops and its resultant voltage drop disappears, and the output goes from “L” to “H”. The

through-type current is then generated again, a voltage drop appears, and repeating the process finally induces

oscillation.

OUT

VSS

VDD

S-1009C

Figure 22 An example for bad i mpl emen tatio n d ue to detecti on voltage ch ang e

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Precautions

• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic

protection circ uit.

• In CMOS output products of the S-1009 Series, the through-type current flows at the detection and the release. If

the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during

releasing.

• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power

supply voltage (VDD) is sl o w near the det ec ti on vo ltag e.

• When designing for mass production using an application circuit described herein, the product deviation and

temperature characteristics of the external parts should be taken into consideration. SII shall not bear any

responsibilit y for pat ent infr in gement s rel ate d to pro ducts using t h e circ uit s descri bed he rein.

• SII claims no responsibility for any disputes arising out of or in connection with any infringement by products

including this I C of pate nt s o wned b y a th ir d part y.

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Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 19

 Characteristics (Typical Data)

1. Detection voltage (VDET) vs. temperature (Ta)

S-1009N08

0.90

0.85

0.80

0.75

0.70

VDET [V]

Ta [°C]

−

40 85

−

25 250 7550

+VDET

−VDET

S-1009N11

1.20

1.15

1.10

1.05

1.00

VDET [V]

Ta [°C]

−

40 85

−

25 250 7550

+VDET

−VDET

S-1009N12

−

DET

[V]

1.00

Ta [°C]

1.40

1.10

1.20

1.30

−

25 250 7550

DET

−V

DET

S-1009N46

−

DET

[V]

4.20

Ta [°C]

5.00

4.40

4.60

4.80

−

25 250 7550

DET

−V

DET

2. Hysteresis voltage width (VHYS) vs. temperature (Ta)

S-1009N08

−

40 Ta [°C]

HYS

[%]

−

40 85

−

25 250 7550

S-1009N11

−

40 Ta [°C]

HYS

[%]

−

40 85

−

25 250 7550

S-1009N12

−

HYS

[%]

Ta [°C]

−

25 250 7550

S-1009N46

−

HYS

[%]

Ta [°C]

−

25 250 7550

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

3. Current consumption (ISS) vs. input voltage (VDD)

S-1009C08 Ta = +25°C

1.50

1.25

1.00

0.75

0.50

0.25

00246810

[μA]

[V]

S-1009C11 Ta = +25°C

1.00

00246810

[μA]

[V]

0.75

0.50

0.25

S-1009C12 Ta = +25°C

[μA]

[V]

1.0

0.50

0.25

0.75

104628

S-1009C46 Ta = +25°C

[μA]

[V]

1.0

0.50

0.25

0.75

104628

Current consumption (I

) vs. temperature (Ta)

S-1009N08 VDD = +VDET + 0.6 V

1.00

0.75

0.50

0.25

Ta [°C]

[μA]

−

40 85

−

25 250 7550

S-1009N11 VDD = +VDET + 0.6 V

1.00

0.75

0.50

0.25

Ta [°C]

[μA]

−

40 85

−

25 250 7550

S-1009N12 VDD = +VDET + 0.6 V

−

ISS [μA]

Ta [°C]

1.00

0.25

0.50

0.75

−

25 250 7550

S-1009N46 VDD = +VDET + 0.6 V

−

ISS [μA]

Ta [°C]

1.00

0.25

0.50

0.75

−

25 250 7550

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

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5. Nch transistor output current (IOUT)

vs.

VDS 6. Pch transistor output current (IOUT)

vs.

VDS

S-1009N46 Ta = +25°C

IOUT [mA]

VDS [V]

15.0

5.0

2.5

10.0

7.5

12.5

4.01.0 1.50.5 3.0 3.52.52.0

VDD = 3.6 V

2.4 V

1.2 V

1.0 V

S-1009C08 Ta = +25°C

IOUT [mA]

VDS [V]

40.0

10.0

30.0

20.0

10.04.02.0 8.06.0

VDD = 8.4 V

7.2 V

6.0 V

4.8 V

3.6 V

2.4 V

1.2 V

7. Nch transistor output current (IOUT)

vs.

input voltage (VDD) 8. Pch transistor output current (IOUT)

vs.

input voltage (VDD)

S-1009N46 VDS = 0.5 V

IOUT [mA]

VDD [V]

4.0

1.0

3.0

2.0

6.03.02.01.0 5.04.0

Ta = −40°C

+25°C

+85°C

S-1009C08 VDS = 0.5 V

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

00246810

[V]

OUT

[mA]

Ta = −40°C

+25°C

+85°C

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

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9. Minimum operating voltage

vs.

input voltage (VDD)

S-1009N08 Pull-up to VDD

Pull-up resistance: 100 kΩ

1.2

1.0

0.8

0.6

0.4

0.2

00 0.2 0.4 0.6 0.8 1.0

VDD [V]

VOUT [V]

Ta = −40°C

+25°C

+85°C

S-1009N11 Pull-up to VDD

Pull-up resistance: 100 kΩ

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 0.2 0.4 0.6 0.8 1.0 1.2

VDD [V]

VOUT [V]

Ta = −40°C

+25°C

+85°C

S-1009N12 Pull-up to VDD

Pull-up resistance: 100 kΩ

VOUT [V]

VDD [V]

1.6

0.4

1.2

0.8

1.40.80.60.40.2 1.21.0

Ta = −40°C

+25°C

+85°C

S-1009N46 Pull-up to VDD

Pull-up resistance: 100 kΩ

OUT

[V]

6.0

1.0

3.0

2.0

4.0

5.0

5.04.03.02.01.0

Ta = −40°C

+25°C

+85°C

S-1009N08 Pull-up to 10 V

Pull-up resistance: 100 kΩ

12.0

10.0

8.0

6.0

4.0

2.0

00 0.2 0.4 0.6 0.8 1.0

VDD [V]

VOUT [V]

Ta = −40°C

+25°C

+85°C

S-1009N11 Pull-up to 10 V

Pull-up resistance: 100 kΩ

12.0

00 0.2 0.4 0.6 0.8 1.0 1.2

VDD [V]

VOUT [V]

10.0

8.0

6.0

4.0

2.0

Ta = −40°C

+25°C

+85°C

S-1009N12 Pull-up to 10 V

Pull-up resistance: 100 kΩ

OUT

[V]

12.0

2.0

8.0

6.0

10.0

4.0

1.40.80.60.40.2 1.21.0

Ta = −40°C

+25°C

+85°C

S-1009N46 Pull-up to 10 V

Pull-up resistance: 100 kΩ

VOUT [V]

VDD [V]

12.0

2.0

6.0

4.0

8.0

10.0

5.04.03.02.01.0

Ta = −40°C

+25°C

+85°C

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Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 23

10. Dynamic response

vs.

COUT (CD pin; open)

S-1009C08

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

tPLH

tPHL

S-1009N08

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

PLH

PHL

S-1009C11

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

tPLH

tPHL

S-1009N11

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

PLH

PHL

S-1009C12

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

tPLH

tPHL

S-1009N12

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

PLH

PHL

S-1009C46

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

tPLH

tPHL

S-1009N46

0.00001

Response time [ms]

0.001

Output pin capacitance [μF]

0.01

0.1

0.10.0001 0.010.001

PLH

PHL

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

VIH

Output voltage

Input voltage

VIL

VDD tPHL tPLH

1 μs

VDD × 10%

VDD × 90%

*1. VIH = 10 V

*2. VIL = 0.7 V

OUT

VSS

VDD

S-1009

Series

100 kΩ

OUT

*1. R is unnecessary for CM OS out put pr oduct s.

Figure 24 Measurement Circuit for Response Time

Figure 23 Measurement Condition for Response Time

Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.

Perform thorough evaluation using the actual application to set the constant.

11. Delay Time

vs.

CD Pin Capacitance (CD) (No output pin capacitance)

S-1009N08 Ta = +25°C

0.1

[ms]

0.1

[nF]

10000

1000

100

10001 10010

S-1009N11 Ta = +25°C

0.1

tD [ms]

0.1

CD [nF]

10000

1000

100

10001 10010

S-1009N12 Ta = +25°C

0.1

tD [ms]

CD [nF] 10001 10010

0.1

10000

1000

100

S-1009N46 Ta = +25°C

0.1

[ms]

[nF] 10001 10010

0.1

10000

1000

100

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 25

12. Delay Time

vs.

Temperature (Ta)

S-1009N08 CD = 4. 7 nF

Ta [°C]

[ms]

−

40 85

−

25 250 7550

S-1009N11 CD = 4. 7 nF

Ta [°C]

[ms]

−

40 85

−

25 250 7550

S-1009N12 CD = 4. 7 nF

−

[ms]

Ta [°C]

−

25 250 7550

S-1009N46 CD = 4. 7 nF

−

[ms]

Ta [°C]

−

25 250 7550

1 μs

VDD × 90%

Input voltage

Output voltage

VIL*2

VSS

VIH*1

*1. VIH = 10 V

*2. VIL = 0.7 V

OUT

VSS

VDD

S-1009

Series

100 kΩ

*1. R is unnecessary for CM OS out put pr oduct s.

Figure 26 Measuremen t ci rcu it fo r dela y ti me

Figure 25 Measu rement condition for delay time

Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.

Perform thorough evaluation using the actual application to set the constant.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

 Application Circuit Examples

1. Microcomputer reset circuits

In microcomputers, when the po wer supply voltage is lower than the guaranteed operating voltage, an unspecified

operation may be performed or the contents of the memory register may be lost. When power supply voltage

returns to the normal level, the microcomputer needs to be initialized. Otherwise, the S-1009 Series may

malfunction aft er that .

Reset circuits t o prot ec t micro comp uter in t h e event of current being mom entarily switch ed of f or l owered.

Using the S-1009 Series which has the low operating voltage, a high accuracy detection voltage and hysteresis,

reset circuits c an b e eas ily c o nst ruct e d as s een in Figure 27 and 28.

VSS

VDD

Microcomputer

S-1009C

VSS

(Only for Nch open dr ain out put pro ducts)

VDD1 VDD2

Microcomputer

S-1009N

Figure 27 Example of rese t circu it (S-10 09C) Figure 28 Example o f re set ci rcui t (S-1009N)

Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.

Perform thorough evaluation using the actual application to set the constant.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 27

2. Power-on reset circuit

A power-on reset circuit c an be co nst ruct ed usin g the S-1009 Series (Nc h op en dr ai n o utput pr od ucts onl y).

(Nch open drain output product)

OUT

VIN

VSS

VDD

S-1009N

RA*1

Di*2

(RA ≤ 100 kΩ)

100 kΩ

*1. R should be 100 kΩ or l ess t o prev ent osc il l at ion.

*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the po wer falling, Di can be

removed when the delay of the falling time is not important.

Figure 29

VDD

[V]

t [s]

OUT

[V]

t [s]

Figure 30

Remark When the power rises s harply, the output may instantaneously be set to the “H” level due to the IC’s

indefinite ar ea (the output volt age is indefinit e when it is the IC’s minimu m operating voltag e or less),

as seen in Figure 31.

VDD

[V]

t [s]

OUT

[V]

t [s]

Figure 31

Caution 1. The above connection diagram and constant will not guarantee successful operation.

Perform thorough evaluation using the actual application to set the constant.

2. Note that the h ysteresis wi dth may be larger as the follow ing equation shows w hen using the

above connection. Perform thorough evaluation using the actual application to set the

constant.

Maximum h ysteresis width = VHYS + RA • 20 μA

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

3. Change of detection voltage

In the Nch open drain out put product s of S-100 9 Series, u sers do n ot need a sp ecific v alue of det ect ion volt age, the

detection volt a ge can be c ha nge d by u sin g a resistance divider or a d iod e, as seen in F i g ure 32 a nd 33.

In Figure 32, hysteresis width also chan ges.

(Nch open drain

ouput product)

A*1

OUT

VIN

VSS

VDD

S-1009N

≤ 100 kΩ)

100 kΩ

Detection volt age = RA + RB

RB • −VDET

Hysteresis width = RA + RB

RB • VHYS

(Nch open drain

output product)

OUT

VIN

VSS

VDD

S-1009N

100 kΩ

Detection volt age = Vf1 + (−VDET)

*1. RA should be 100 kΩ or l ess to prev ent oscil lat i on.

Caution If RA and RB are large, the hysteresis width

may also be larger than the value given by

the above equation due to the through-type

current (which flows slightly in an Nch open

drain product).

Figure 33

Figure 32

Caution 1. The abo ve connection diagram and constant will not guarantee successful operation.

Perform thorough evaluation using the actual application to set the constant.

2. Note that the h ysteresis wi dth may be larger as the follow ing equation shows w hen using the

above connections. Perform thorough evaluation using the actual application to set the

constant.

Maximum h ysteresis width = RA + RB

RB • VHYS + RA • 20 μA

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 29

■ Marking Specifications

1. SC-82AB

(1) to (3) : Product code (refer to Product name vs. Product code)

4 3

1 2

SC-82AB

Top view

(1) (2) (3)

Product name vs. Product code

1. 1 Nch open drain output products 1. 2 CMOS o utput products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1009N08I-N4T1U T 8 A S-1009C08I-N4T1U T 6 A

S-1009N09I-N4T1U T 8 B S-1009C09I-N4T1U T 6 B

S-1009N10I-N4T1U T 8 C S-1009C10I-N4T1U T 6 C

S-1009N11I-N4T1U T 8 D S-1009C11I-N4T1U T 6 D

S-1009N12I-N4T1U T 8 E S-1009C12I-N4T1U T 6 E

S-1009N13I-N4T1U T 8 F S-1009C13I-N4T1U T 6 F

S-1009N14I-N4T1U T 8 G S-1009C14I-N4T1U T 6 G

S-1009N15I-N4T1U T 8 H S-1009C15I-N4T1U T 6 H

S-1009N16I-N4T1U T 8 I S-1009C16I-N4T1U T 6 I

S-1009N17I-N4T1U T 8 J S-1009C17I-N4T1U T 6 J

S-1009N18I-N4T1U T 8 K S-1009C18I-N4T1U T 6 K

S-1009N19I-N4T1U T 8 L S-1009C19I-N4T1U T 6 L

S-1009N20I-N4T1U T 8 M S-1009C20I-N4T1U T 6 M

S-1009N21I-N4T1U T 8 N S-1009C21I-N4T1U T 6 N

S-1009N22I-N4T1U T 8 O S-1009C22I-N4T1U T 6 O

S-1009N23I-N4T1U T 8 P S-1009C23I-N4T1U T 6 P

S-1009N24I-N4T1U T 8 Q S-1009C24I-N4T1U T 6 Q

S-1009N25I-N4T1U T 8 R S-1009C25I-N4T1U T 6 R

S-1009N26I-N4T1U T 8 S S-1009C26I-N4T1U T 6 S

S-1009N27I-N4T1U T 8 T S-1009C27I-N4T1U T 6 T

S-1009N28I-N4T1U T 8 U S-1009C28I-N4T1U T 6 U

S-1009N29I-N4T1U T 8 V S-1009C29I-N4T1U T 6 V

S-1009N30I-N4T1U T 8 W S-1009C30I-N4T1U T 6 W

S-1009N31I-N4T1U T 8 X S-1009C31I-N4T1U T 6 X

S-1009N32I-N4T1U T 8 Y S-1009C32I-N4T1U T 6 Y

S-1009N33I-N4T1U T 8 Z S-1009C33I-N4T1U T 6 Z

S-1009N34I-N4T1U T 9 A S-1009C34I-N4T1U T 7 A

S-1009N35I-N4T1U T 9 B S-1009C35I-N4T1U T 7 B

S-1009N36I-N4T1U T 9 C S-1009C36I-N4T1U T 7 C

S-1009N37I-N4T1U T 9 D S-1009C37I-N4T1U T 7 D

S-1009N38I-N4T1U T 9 E S-1009C38I-N4T1U T 7 E

S-1009N39I-N4T1U T 9 F S-1009C39I-N4T1U T 7 F

S-1009N40I-N4T1U T 9 G S-1009C40I-N4T1U T 7 G

S-1009N41I-N4T1U T 9 H S-1009C41I-N4T1U T 7 H

S-1009N42I-N4T1U T 9 I S-1009C42I-N4T1U T 7 I

S-1009N43I-N4T1U T 9 J S-1009C43I-N4T1U T 7 J

S-1009N44I-N4T1U T 9 K S-1009C44I-N4T1U T 7 K

S-1009N45I-N4T1U T 9 L S-1009C45I-N4T1U T 7 L

S-1009N46I-N4T1U T 9 M S-1009C46I-N4T1U T 7 M

Remark Please contact our sales off ice for prod uc t s with specifications ot her th an t he above.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

S-1009 Series Rev.5.0_01

Seiko Instruments Inc.

2. SOT-23-5

(1) to (3) : Product code (refer to Product name vs. Product code)

(4) : Lot number

5 4

1 3

(1) (2) (3) (4)

SOT-23-5

vie

Product name vs. Product code

2. 1 Nch open drain output products 2. 2 CMOS output products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1009N08I-M5T1U T 8 A S-1009C08I-M5T1U T 6 A

S-1009N09I-M5T1U T 8 B S-1009C09I-M5T1U T 6 B

S-1009N10I-M5T1U T 8 C S-1009C10I-M5T1U T 6 C

S-1009N11I-M5T1U T 8 D S-1009C11I-M5T1U T 6 D

S-1009N12I-M5T1U T 8 E S-1009C12I-M5T1U T 6 E

S-1009N13I-M5T1U T 8 F S-1009C13I-M5T1U T 6 F

S-1009N14I-M5T1U T 8 G S-1009C14I-M5T1U T 6 G

S-1009N15I-M5T1U T 8 H S-1009C15I-M5T1U T 6 H

S-1009N16I-M5T1U T 8 I S-1009C16I-M5T1U T 6 I

S-1009N17I-M5T1U T 8 J S-1009C17I-M5T1U T 6 J

S-1009N18I-M5T1U T 8 K S-1009C18I-M5T1U T 6 K

S-1009N19I-M5T1U T 8 L S-1009C19I-M5T1U T 6 L

S-1009N20I-M5T1U T 8 M S-1009C20I-M5T1U T 6 M

S-1009N21I-M5T1U T 8 N S-1009C21I-M5T1U T 6 N

S-1009N22I-M5T1U T 8 O S-1009C22I-M5T1U T 6 O

S-1009N23I-M5T1U T 8 P S-1009C23I-M5T1U T 6 P

S-1009N24I-M5T1U T 8 Q S-1009C24I-M5T1U T 6 Q

S-1009N25I-M5T1U T 8 R S-1009C25I-M5T1U T 6 R

S-1009N26I-M5T1U T 8 S S-1009C26I-M5T1U T 6 S

S-1009N27I-M5T1U T 8 T S-1009C27I-M5T1U T 6 T

S-1009N28I-M5T1U T 8 U S-1009C28I-M5T1U T 6 U

S-1009N29I-M5T1U T 8 V S-1009C29I-M5T1U T 6 V

S-1009N30I-M5T1U T 8 W S-1009C30I-M5T1U T 6 W

S-1009N31I-M5T1U T 8 X S-1009C31I-M5T1U T 6 X

S-1009N32I-M5T1U T 8 Y S-1009C32I-M5T1U T 6 Y

S-1009N33I-M5T1U T 8 Z S-1009C33I-M5T1U T 6 Z

S-1009N34I-M5T1U T 9 A S-1009C34I-M5T1U T 7 A

S-1009N35I-M5T1U T 9 B S-1009C35I-M5T1U T 7 B

S-1009N36I-M5T1U T 9 C S-1009C36I-M5T1U T 7 C

S-1009N37I-M5T1U T 9 D S-1009C37I-M5T1U T 7 D

S-1009N38I-M5T1U T 9 E S-1009C38I-M5T1U T 7 E

S-1009N39I-M5T1U T 9 F S-1009C39I-M5T1U T 7 F

S-1009N40I-M5T1U T 9 G S-1009C40I-M5T1U T 7 G

S-1009N41I-M5T1U T 9 H S-1009C41I-M5T1U T 7 H

S-1009N42I-M5T1U T 9 I S-1009C42I-M5T1U T 7 I

S-1009N43I-M5T1U T 9 J S-1009C43I-M5T1U T 7 J

S-1009N44I-M5T1U T 9 K S-1009C44I-M5T1U T 7 K

S-1009N45I-M5T1U T 9 L S-1009C45I-M5T1U T 7 L

S-1009N46I-M5T1U T 9 M S-1009C46I-M5T1U T 7 M

Remark Please contact our sales off ice for prod uc t s with specifications ot her th an t he above.

SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)

Rev.5.0_01 S-1009 Series

Seiko Instruments Inc. 31

3. SNT-4A

(1) to (3) : Product code (refer to Product name vs. Product code)

SNT-4A

view

(1) (2) (3)

Product name vs. Product code

3. 1 Nch open drain output products 3. 2 CMOS output products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1009N08I-I4T1U T 8 A S-1009C08I-I4T1U T 6 A

S-1009N09I-I4T1U T 8 B S-1009C09I-I4T1U T 6 B

S-1009N10I-I4T1U T 8 C S-1009C10I-I4T1U T 6 C

S-1009N11I-I4T1U T 8 D S-1009C11I-I4T1U T 6 D

S-1009N12I-I4T1U T 8 E S-1009C12I-I4T1U T 6 E

S-1009N13I-I4T1U T 8 F S-1009C13I-I4T1U T 6 F

S-1009N14I-I4T1U T 8 G S-1009C14I-I4T1U T 6 G

S-1009N15I-I4T1U T 8 H S-1009C15I-I4T1U T 6 H

S-1009N16I-I4T1U T 8 I S-1009C16I-I4T1U T 6 I

S-1009N17I-I4T1U T 8 J S-1009C17I-I4T1U T 6 J

S-1009N18I-I4T1U T 8 K S-1009C18I-I4T1U T 6 K

S-1009N19I-I4T1U T 8 L S-1009C19I-I4T1U T 6 L

S-1009N20I-I4T1U T 8 M S-1009C20I-I4T1U T 6 M

S-1009N21I-I4T1U T 8 N S-1009C21I-I4T1U T 6 N

S-1009N22I-I4T1U T 8 O S-1009C22I-I4T1U T 6 O

S-1009N23I-I4T1U T 8 P S-1009C23I-I4T1U T 6 P

S-1009N24I-I4T1U T 8 Q S-1009C24I-I4T1U T 6 Q

S-1009N25I-I4T1U T 8 R S-1009C25I-I4T1U T 6 R

S-1009N26I-I4T1U T 8 S S-1009C26I-I4T1U T 6 S

S-1009N27I-I4T1U T 8 T S-1009C27I-I4T1U T 6 T

S-1009N28I-I4T1U T 8 U S-1009C28I-I4T1U T 6 U

S-1009N29I-I4T1U T 8 V S-1009C29I-I4T1U T 6 V

S-1009N30I-I4T1U T 8 W S-1009C30I-I4T1U T 6 W

S-1009N31I-I4T1U T 8 X S-1009C31I-I4T1U T 6 X

S-1009N32I-I4T1U T 8 Y S-1009C32I-I4T1U T 6 Y

S-1009N33I-I4T1U T 8 Z S-1009C33I-I4T1U T 6 Z

S-1009N34I-I4T1U T 9 A S-1009C34I-I4T1U T 7 A

S-1009N35I-I4T1U T 9 B S-1009C35I-I4T1U T 7 B

S-1009N36I-I4T1U T 9 C S-1009C36I-I4T1U T 7 C

S-1009N37I-I4T1U T 9 D S-1009C37I-I4T1U T 7 D

S-1009N38I-I4T1U T 9 E S-1009C38I-I4T1U T 7 E

S-1009N39I-I4T1U T 9 F S-1009C39I-I4T1U T 7 F

S-1009N40I-I4T1U T 9 G S-1009C40I-I4T1U T 7 G

S-1009N41I-I4T1U T 9 H S-1009C41I-I4T1U T 7 H

S-1009N42I-I4T1U T 9 I S-1009C42I-I4T1U T 7 I

S-1009N43I-I4T1U T 9 J S-1009C43I-I4T1U T 7 J

S-1009N44I-I4T1U T 9 K S-1009C44I-I4T1U T 7 K

S-1009N45I-I4T1U T 9 L S-1009C45I-I4T1U T 7 L

S-1009N46I-I4T1U T 9 M S-1009C46I-I4T1U T 7 M

Remark Please contact our sales off ice for prod uc t s with specificat ions other th an above.

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

0.3 +0.1

-0.05

0.4 +0.1

-0.05

0.05

0.16+0.1

-0.06

1.3±0.2

2.0±0.2

No. NP004-A-P-SD-1.1

SC82AB-A-PKG Dimensions

NP004-A-P-SD-1.1

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

1.1±0.1

0.2±0.05

4.0±0.1

2.0±0.05

4.0±0.1

2.2±0.2

(0.7)

No. NP004-A-C-SD-3.0

NP004-A-C-SD-3.0

SC82AB-A-Carrier Tape

Feed direction

ø1.05±0.1

ø1.5 +0.1

-0

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

No. NP004-A-C-S1-2.0

NP004-A-C-S1-2.0

SC82AB-A-Carrier Tape

4.0±0.1 2.0±0.1

4.0±0.1 ø1.05±0.1

0.2±0.05

1.1±0.1

Feed direction

2.3±0.15

ø1.5 +0.1

-0

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

QTY. 3,000

(60°)

ø13±0.2

12.5max.

9.0±0.3

No. NP004-A-R-SD-1.1

NP004-A-R-SD-1.1

SC82AB-A-Reel

Enlarged drawing in the central part

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

2.9±0.2

1.9±0.2

0.95±0.1

0.4±0.1

0.16 +0.1

-0.06

123

No. MP005-A-P-SD-1.2

MP005-A-P-SD-1.2

SOT235-A-PKG Dimensions

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

ø1.5 +0.1

-0 2.0±0.05

ø1.0 +0.2

-0 4.0±0.1

1.4±0.2

0.25±0.1

3.2±0.2

123

No. MP005-A-C-SD-2.1

MP005-A-C-SD-2.1

SOT235-A-Carrier Tape

Feed direction

4.0±0.1(10 pitches:40.0±0.2)

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

12.5max.

9.0±0.3

ø13±0.2

(60°) (60°)

QTY. 3,000

No. MP005-A-R-SD-1.1

MP005-A-R-SD-1.1

SOT235-A-Reel

Enlarged drawing in the central part

1.2±0.04

0.65

0.2±0.05

0.48±0.02

0.08

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

SNT-4A-A-PKG Dimensions

PF004-A-P-SD-4.0

No. PF004-A-P-SD-4.0

+0.05

-0.02

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

PF004-A-C-SD-1.0

SNT-4A-A-Carrier Tape

Feed direction

4.0±0.1

2.0±0.05

4.0±0.1

ø1.5 +0.1

-0

ø0.5

1.45±0.1 0.65±0.05

0.25±0.05

5°

No. PF004-A-C-SD-1.0

+0.1

-0

12.5max.

9.0±0.3

ø13±0.2

(60°) (60°)

QTY. 5,000

No. PF004-A-R-SD-1.0

PF004-A-R-SD-1.0

Enlarged drawing in the central part

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

SNT-4A-A-Reel

No.

TITLE

SCALE

UNIT mm

SNT-4A-A-Land Recommendation

Seiko Instruments Inc.

PF004-A-L-SD-3.0

No. PF004-A-L-SD-3.0

0.3

0.35

0.3

0.52

1.16

0.52

Caution Making the wire pattern under the package is possible. However, note that the package

may be upraised due to the thickness made by the silk screen printing and of a solder

resist on the pattern because this package does not have the standoff.

www.sii-ic.com

• The information described herein is subject to change without notice.

• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein

whose related industrial properties, patents, or other rights belong to third parties. The application circuit

examples explain typical applications of the products, and do not guarantee the success of any specific

mass-production design.

• When the products described herein are regulated products subject to the Wassenaar Arrangement or other

agreements, they may not be exported without authorization from the approp riate governmental authority.

• Use of the information described herein for other purposes and/or reproduction or copying without the

express permissi on of Seiko Instruments Inc. is strictly prohibited.

• The products described herein cannot be used as part of any device or equipment affecting the human

body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus

installed in airplanes and other vehicle s, without prior written permission of Seiko Instrum ents Inc.

• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the

failure or malfunction of semiconductor products may occur. The user of these products should therefore

give thorough consideration to safety design, including redundancy, fire-prevention measures, and

malfunction prevention, to prevent any accidents, fires, or comm unity damage that may ensue.