SIEMENS BFR 106 NPN Silicon RF Transistor * For low noise, high-gain amplifiers * For linear broadband amplifiers * Special application: antenna amplifiers * Complementary type: BFR 194 (PNP) PSO5161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking |Ordering Code Pin Configuration Package BFR106 |R7s |Q62702-F1219 1=B |2=E |3=C |4=E |SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 15 Vv Collector-emitter voltage Voces 20 Collector-base voltage Vogo 20 Emitter-base voltage Vepo 3 Collector current Ic 100 mA Base current lg 12 Total power dissipation Prot mw Tg $73 C 700 Junction temperature Tj 150 C Ambient temperature Ta - 65... + 150 Storage temperature Tetg - 65... + 150 Thermal Resistance Junction - soldering point") | Finas 110 KW 1) Tg is Measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1336 12.96SIEMENS BFR 106 Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io =1mMA, Ip =0 15 - - Collector-emitter cutoff current loes pA Voge = 20 V, Vee = 0 - - 100 Collector-base cutoff current Icso nA Veg = 10V, =O - - 100 Emitter-base cutoff current leBo pA Veg =2V, Io =0 - - 10 DC current gain hee - ig = 70 MA, Vop = 8V 40 100 220 Semiconductor Group 1337 12.96SIEMENS BFR 106 Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symboi Values Unit min. [typ. |max. AC Characteristics Transition frequency fr GHz lo =70 MA, Voge = 8 V, f= 500 MHz 3.5 5 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 0.95 15 Collector-emitter capacitance Cog Voge = 10 V, f= 1 MHz - 0.25 - Emitter-base capacitance Ceb Veg = 0.5 V, f= 1 MHz - 44 - Noise figure F dB Io = 20 mA, VoE =8V, Zs = ZSopt f = 900 MHz - 2.5 - f= 1.8 GHz - 4 - Power gain 2) Gma Io = 70 MA, Veg = 8 V, 2 = Zeopt 4.= A opt f = 900 MHz - 12.5 - f= 1.8 Griz - 7.5 - Transducer gain 1So4l? Io =70 MA, Vog = 8 V, Zy =Z_= 50 f = 900 MHz - 10.5 - f= 1.8 GHz - 5 - 2) Gma = !So1/Syal (k-(k-1) 72) Semiconductor Group 1338 12.96SIEMENS BFR 106 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA BF = 132.75 - NF = 0.89608 - VAF = 15 Vv IKF = 0.44125 A ISE = 71.424 fA NE = 1.3235 - BR = 11.407 - NR = 0.91008 - VAR = 4.1613 Vv IKR = 0.010016 A Isc = 2.0992 fA NC = 1.4602 - RB = 1.2652 Q IRB = 0.028135 mA RBM= ~~ 1.0893 Q RE = 1.1351 Q RC = 0.27485 Q CJE = 5.0933 ~s fF VJE = 0.85909 V MJE = 0.69062 - TF = 35.78 ps XTF = 0.44444 =- VTF = 0.10681 V ITF = 62.059 mA PTF= 0 deg |CJC= 2327.8 fF VIC = 0.81533 V MJC = 0.46849 - XCJC = 0.14496 - TR= 1.2466 ns CJS = 0 fF VJS = 0.75 Vv MJS = 0 - XTB = OQ - EG = 1.11 eV XTI = 3 - FC = 0.92887 - TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: institut far Mobil-und Satetlitenfunktechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: LBi = 0.85 nH Cog LBO= 0.51 nH | LEI = 0.69 nH sal a alos fico F LOCO = 0.43 nH T a y Cc CBE= 73 {F ly CCB= 84 fF CCE = 165 fF E HAO7222 Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siernens CD-ROM or see Internet: http:/Awww.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 1339 12.96BFR 106 SIEMENS f(Ta", Ts) Total power dissipation Pio * Package mounted on epoxy 8007 120 C_150 60 80 100 40 Ts a F (tp) Permissible Pulse Load Piomax/Ptotoc Permissible Pulse Load Ainjs = f (fp) 12.96 1340 Semiconductor GroupSIEMENS BFR 106 Collector-base capacitance C,p = f (Vcp) Vee = Ve = 0, f= 1MHz QO 4 8 12 16 v 22 Vv, Power Gain Gma, Gms = Alc) f= 0.9GHz Vog = Parameter 0 20 40 60 80 mA 120 Semiconductor Group Transition frequency f; = f (/c) Voge = Parameter 6.0 GHz .0 45 _ 3.5 3.0 25 2.0 1.5 1.0 0.5 0.0 0 2 40 60 8 mA 120 e | Power Gain Gma, Gms = (lc) f= 1.8GHz Voce = Parameter 9.0 dB 7.0 ts 5.0 490 3.0 2.0 4.0 0.0 1341 12.96SIEMENS BFR 106 Power Gain Gina, Gms = (Voce): Intermodulation Intercept Point /P3=fic) ISpql? = KVo_g):------- (3rd order, Output, Zg=Z,=500) f= Parameter Vce = Parameter, f= 900MHz =70mA 0.9GHz wo oe fe = 0.9GHz t 10 f a a y 8 , i 1.8GHz 1 si ! ae lo 1.8GHz { 2 4 7 y / 2-4 [ 0 0 2 4 6 8 Vv 12 0 10 20 30 40 50 60 70 BO mA 100 Vcc & Power Gain Gma, Gms = KA Power Gain |S,/2= f(A Voce = Parameter Voce = Parameter 45 40 {=70MmA aB G nr) t 2 5 _ [J 10v 0 0 0.7V. Vv. 5 5 | | 0.0 05 10 15 20 25 30 GHz 40 00 #085 40 15 20 25 GHz 35 f f Semiconductor Group 1342 12.96