© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.2, Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
RoHS
LSIC1MO120E0080 1200 V N-channel, Enhancement-mode SiC MOSFET
Features
Applications
• Optimized for high-
frequency, high-efficiency
applications
• Extremely low gate
charge and output
capacitance
• Low gate resistance for
high-frequency switching
• Normally-off operation at
all temperatures
• Ultra-low on-resistance
• High-frequency
applications
• Solar Inverters
• Switch Mode Power
Supplies
• UPS
• Motor Drives
• High Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
Circuit Diagram TO-247-3L
21 3
*
* Body
diode
Product Summary
Characteristics Value Unit
VDS 1200 V
Typical RDS(ON) 80 mΩ
ID ( TC ≤ 100 °C) 25 A
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo =
Pb-free lead plating
Environmental
RoHS
Pb
Pb
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.2, Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
Thermal Characteristics
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Continuous Drain Current ID
VGS = 20 V, TC = 25 °C 39 A
VGS = 20 V, TC = 100 °C 25
Pulsed Drain Current 1 ID(pulse) TC = 25 °C 80 A
Power Dissipation PDTC = 25 °C, TJ = 150 °C 179 W
Operating Junction Temperature TJ-55 to 150 °C
Gate-source Voltage
VGS,MAX Absolute maximum values -6 to 22
V
VGS,OP,TR Transient, <1% duty cycle -10 to 25
VGS,OP
Recommended DC
operating values -5 to 20
Storage Temperature TSTG --55 to 150 °C
Lead Temperature for Soldering Tsold -260 °C
Mounting Torque MDM3 or 6-32 screw 0.6 Nm
5.3 in-lb
Footnote 1: Pulse width limited by TJ,max
Characteristics Symbol Value Unit
Maximum Thermal Resistance, junction-to-case Rth,JC,max 0.7 °C/W
Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 °C/W
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Min Typ Max Unit
Static Characteristics
Drain-source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 1200 - - V
Zero Gate Voltage Drain Current IDSS
VDS = 1200 V, VGS = 0 V - 1 100 μA
VDS = 1200 V, VGS = 0 V, TJ = 150 °C - 2 -
Gate Leakage Current IGSS,F VGS = 20 V, VDS = 0 V - - 100 nA
IGSS,R VGS = -10 V, VDS = 0 V - - 100
Drain-source On-state Resistance RDS(ON)
ID = 20 A, VGS = 20 V - 80 100 mΩ
ID = 20 A, VGS = 20 V, TJ = 150 °C -105 -
Gate Threshold Voltage VGS,(th)
VDS = VGS, ID = 10 mA 1.8 2.8 4.0 V
VDS = VGS, ID = 10 mA, TJ = 150 °C -1. 9 -
Gate Resistance RGf = 1 MHz, VAC = 25 mV -1.0 - Ω
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Value Unit
Min Typ Max
Dynamic Characteristics
Turn-on Switching Energy EON VDD = 800 V, ID = 20 A,
VGS = -5/+20 V,
RG,ext = 2 Ω, L = 1.4 mH
- 270 -
μJTurn-off Switching Energy EOFF - 60 -
Total Per-cycle Switching Energy ETS - 330 -
Input Capacitance CISS
VDD = 800 V, VGS = 0 V,
f = 1 MHz, VAC = 25 mV
- 1825 -
pFOutput Capacitance COSS - 75 -
Reverse Transfer Capacitance CRSS -15 -
COSS Stored Energy EOSS - 25 - μJ
Total Gate Charge QgVDD = 800 V, ID = 20 A,
VGS = -5/+20 V
- 95 -
nCGate-source Charge Qgs - 29 -
Gate-drain Charge Qgd - 39 -
Turn-on Delay Time td(on) VDD = 800 V, VGS = -5/+20 V,
ID = 20 A, RG,ext = 2 Ω,
RL = 40 Ω,
Timing relative to VDS
-10 -
ns
Rise Time tr-10 -
Turn-off Delay Time td(off) -16 -
Fall Time tf- 6 -
Reverse Diode Characteristics
Characteristics Symbol Conditions Value Unit
Min Typ Max
Diode Forward Voltage VSD
IS = 10 A, VGS = 0 V - 3.8 - V
IS = 10 A, VGS = 0 V, TJ = 150 °C - 3.4 -
Continuous Diode Forward Current ISVGS = 0 V, TC = 25 °C - - 35 A
Peak Diode Forward Current 1ISP - - 85
Reverse Recovery Time trr VGS = -5 V, IS = 20 A,
VR = 800 V,
dI/dt = 5.3 A/ns
- 25 - ns
Reverse Recovery Charge Qrr -185 - nC
Peak Reverse Recovery Current Irrm -16 - A
Footnote 1: Pulse width limited by TJ,max
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.2, Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
Case Temperature, T
C
(
±
C)
Maximum Power Dissipation (W)
0
20
40
60
80
100
120
140
160
180
200
-75-25 25 75 125175
Figure 2: Transfer Characteristics ( VDS = 10 V )
Figure 3: Output Characteristics ( TJ = 25 °C )
Figure 1: Maximum Power Dissipation ( TJ = 150 °C )
0
10
20
30
40
50
60
70
80
90
0510 15 20
Drain Current, I
D
(A)
Gate-Source Voltage, V
GS
(V)
150 C
Ʊ25 C
Ʊ-55 C
Ʊ
Figure 4: Output Characteristics ( TJ = 150 °C )
10V
12V
14V
16V
20V
18V
0
20
40
60
80
0246810
Drain Current, I
D
(A)
Drain-source Voltage, V
DS
(V)
10V
12V
14V
V = 20V,18V,16V
0
20
40
60
80
0246810
Drain Current, I
D
(A)
Drain
-
source Voltage, V
DS
(V)
GS
Figure 6: Reverse Conduction Characteristics ( TJ = 25 °C )
0
10
20
30
40
50
60
70
80
01234567
Reverse Current, I
S
(A)
Reverse Voltage, V
SD
(V)
-5V0V 5V 10V
V
GS
= 15V, 20V
Figure 5: Output Characteristics ( TJ = -55 °C )
0
20
40
60
80
0246810
Drain Current, I
D
(A)
Drain
-
source Voltage, V
DS (V)
10V
12V
14V
16V
20V
18V
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L
Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area ( TC = 25 °C )
10 10 10 10 10 10 10
-6 -5 -4 -3 -2 -1 0
Transient Thermal Impedance, Z
th,JC
(Normalized to R
th,JC
)
Pulse Width (s)
10
0
10
-1
10
-2
10
-3
0.5
0.3
0.1
0.05
0.02
0.01
Single Pulse
10 μs
100 μs
1 ms
DC
0.1
1
10
100
0.1101000
Drain Current, I
D
(A)
Drain-source Voltage, V
DS
(V)
Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance
0
20
40
60
80
100
120
140
160
180
200
15 25 35 45 55 65
On-resistance, R
DS(ON)
(mΩ)
Drain Current, I
D
(A)
25 ƱC
150 ƱC
-55 ƱC
Normalized On-Resistance, RDS(ON)
Junction Temperature, TJ(±C)
( V = 20 V, I = 20 A )
GS D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-75-50 -250 25 50 75 100125150175
Figure 7: Reverse Conduction Characteristics ( TJ = 150 °C )
-5V0V 5V V =
10V,15V,20V
0
10
20
30
40
50
60
70
80
01234567
Reverse Current, I
S
(A)
Reverse Voltage, V
SD
(V)
GS
Figure 8: Reverse Conduction Characteristics ( TJ = -55 °C )
0
10
20
30
40
50
60
70
80
01234567
Reverse Current, IS(A)
Reverse Voltage, VSD (V)
-5V0V 5V 10VVGS =
15V,20V
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.2, Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
Figure 13: Threshold Voltage
±C)
Threshold Voltage, VGS(th)(V)
Junction Temperature, T
J(
(I
D
= 10 mA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75-50 -250 25 50 75 100125150175
Figure 14: Drain-source Blocking Voltage
(±C)
Normalized Blocking Voltage, V(BR)DSS (V)
Junction Temperature, TJ
(I
D
= 250 μA)
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
1.04
-75-50 -250 25 50 75 100125 150175
Figure 15: Junction Capacitances Figure 16: Junction Capacitances
Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge
10
100
1000
10000
0200 400600 8001000
Capacitance (pF)
Drain Voltage, VDS (V)
C
C
C
ISS
OSS
RSS
( f = 1 MHz )
C
C
ISS
OSS
050100 150200
Drain Voltage, V
DS
(V)
10
100
1000
10000
Capacitance (pF)
( f = 1 MHz )
RSS
C
0
10
20
30
40
0200 400600 8001000
Stored Energy, E
oss
(μJ)
Drain Voltage, V
DS
(V)
Gate -source Voltage, VGS (V)
Gate Charge, Qg(nC)
( V = 800 V, I = 20 A )
DD D
-5
0
5
10
15
20
0102030405060708090100
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L
Figure 19: Switching Energy vs. Drain Current Figure 20: Switching Energy vs. Gate Resistance
E
0
200
400
600
800
1000
1200
01020304050
Switching Energy (μJ)
Drain Current, I
D
(A)
V
DD
= 800 V
R
G,ext
= 2
V
GS
=-5/+20V
FWD = LSIC2SD120A10
L = 1.4 mH
T
J
= 25 °C
TS
E
ON
E
OFF
0
100
200
300
400
500
600
700
024681012
Switching Energy (μJ)
External Gate Resistance, RG,ext (Ω)
V
DD
= 800 V
I
D
= 20A
V
GS
=-5/+20V
FWD = LSIC2SD120A10
L = 1.4 mH
T
J
= 25 °C
E
TS
E
ON
E
OFF
Package Dimensions TO-247-3L
1A
R0.93
5.44 5.44
2.46
Recommended Hole Pattern Layout
UNIT: mm
Symbol Millimeters
Min Nom Max
A 4.902 5.029 5.156
A1 2.253 2.380 2.507
A2 1.854 1.981 2.108
D 20.828 20.955 21.082
E 15.773 15.900 16.027
E2 4.191 4.318 4.445
E2/2 1.473 1.524 1.575
e 5.436
L 20.066 20.193 20.320
L1 3.937 4.191 4.445
øP3.556 3.067 3.658
Q 5.486 5.613 5.740
S 6.045 6.172 6.299
b 0.991 - 1.397
b1 0.991 1.199 1.346
b2 1.651 - 2.387
b3 1.651 1.999 2.336
b4 2.591 - 3.429
b5 2.591 3.000 3.378
c 0.381 0.635 0.889
c1 0.381 0.610 0.838
D1 17.399 17.526 17.653
D2 1.067 1.194 1.321
E1 13.894 14.021 14.148
øP1 7.061 7.188 7.315
Notes:
1. Dimensions are in millimeters
2. Dimension D, E do not include mold flash.
Mold flash shall not exceed 0.127 mm per
side measured at outer most extreme of
plastic body.
3.øP to have a maximum draft angle of 38.1
mm to the top of the part with a maximum
hole diameter of 3.912 mm.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.2, Revised: 10/12/18
SiC MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC1MO120E0080 SIC1MO120E0080 Tube(30pcs) 450
Part Numbering and Marking System
SIC
1
MO
E = TO-247-3L
YY
WW
E
ZZZZZZ-ZZ
120
0080
SIC1MO120E0080
YYWWE
ZZZZZZ-ZZ
L
F
= SiC
= MOSFET
= Voltage Rating (1200 V)
= Gen1
= RDS(ON) (80 mOhm)
= Week
= Special Code
= Lot Number
= Year
Packing Specification TO-247-3L
f
a;
f;
Øf;
f
f
f
f
f
f
a
NOTE:
1. All pin plug holes are considered critical dimension
2. Tolerance is to be ±0.010 unless otherwise specified
3. Dimension are in inch (and millimeters).
Ø
a
a;
f;
Ø
Ø
f;
f
f
f
f
f
f
f
Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace,
medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure
or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse
product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse
documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set
forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed
by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer
Notice at www.littelfuse.com/disclaimer-electronics.
