MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features * * * * 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value Unit 36 16 3.5 1.0 7.8 -65 to +200 +200 V V V A W C C 35.0 C/W Thermal Data RTH(J-C) Thermal Resistance Junction-Case Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 MS1649 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCES IC = 50mA VBE = 0 36 --- --- V BVCEO IC = 50mA IB = 0 16 --- --- V BVEBO IE = 1mA IC = 0 3.5 --- --- V ICES VCB = 12.5V VBE = 0 --- --- 1.0 mA HFE VCE = 5.0V IC =100mA 20 --- 150 --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit GPE f = 470MHz POUT = 3.0W VCC = 12.5V 9.5 --- --- dB f = 470MHz POUT = 3.0W VCC = 12.5V 50 --- --- % COB f = 1.0MHz --- --- 12 pf VCB = 12.5 V IMPEDANCE DATA FREQ ZIN() ZCL() 175 MHz 3.5 + j1.2 14.0 + j10.0 470 MHz 3.3 + j3.2 11.0 + j5.7 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 MS1649 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05