Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A : 09/16/05
MS1649
RF & MICROWAVE TRANSIS TORS
UHF CLASS C MOBILE APPLICATIONS
DESCRIPTION:
The MS1649 is a 12 .5V epitaxial NPN planar transistor
designed primarily for UHF communications. T his device is
packaged i n a grounded emitter TO-39 package for i ncreased
power gain and optimum heat dissipation.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current 1.0 A
PTOT Total Power Dissipation 7.8 W
TSTG Storage Temperature -65 to +200 °C
TJ Junction Temperature +200 °C
Thermal Data
RTH(J-C) Thermal Resistance Junction-Case 35.0 °C/W
1. Collecto r
2. Base
3. Emitter
TO-39
Features
•47 0 MHz
•POUT = 3W
•GP = 9.5 dB MINIMUM
•COMMON EMITTER CONFIGURATION
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A : 09/16/05
MS1649
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min. Typ. Max. Unit
BVCES I
C = 50mA VBE = 0 36 --- --- V
BVCEO I
C= 50mA IB= 0 16 --- --- V
BVEBO I
E = 1mA I C= 0 3.5 --- --- V
ICES V
CB = 12.5V VBE = 0 --- --- 1.0 mA
HFE V
CE = 5.0V IC =100mA 20 --- 150 ---
DYNAMIC
Symbol
Test Conditions
Value
Min. Typ. Max. Unit
GPE f = 470MHz POUT = 3.0W VCC
9.5 --- --- dB
ηf = 470MHz POUT = 3.0W VCC
50 --- --- %
COB f = 1.0MHz VCB = 12.5 V --- --- 12 pf
IMPEDANCE DATA
FREQ ZIN(Ω) ZCL(Ω)
175 MHz 3.5 + j1.2 14.0 + j10.0
470 MHz 3.3 + j3.2 11.0 + j5.7
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A : 09/16/05
MS1649
PACKAGE MECHANICAL DATA