TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
T4-LDS-0014 Rev. 4 (082192) Page 1 of 2
DEVICES LEVELS
2N4150 2N5237 2N5238 JAN
2N4150S 2N5237S 2N5238S JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N4150
2N4150S 2N5237
2N5237S 2N5238
2N5238S Unit
Collector-Emitter Voltage VCEO 70 120 170 Vdc
Collector-Base Voltage VCBO 100 150 200 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Collector Current IC 10 Adc
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2) PT 1.0
15 W
Operating & Storage Junction Temperature Range Tj , Tstg -65 to +200 °C
Thermal Resistance, Junction-to Case
Junction- to Ambient
RθJC
RθJA
10
175 °C/W
1) Derate linearly @ 5.7mW/°C for TA > +25°C
2) Derate linearly @ 100mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.1mAdc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CEO
70
120
170
Vdc
Collector-Emitter Cutoff Current
VBE = 0.5Vdc, VCE = 60Vdc
VBE = 0.5Vdc, VCE = 110Vdc
VBE = 0.5Vdc, VCE = 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEX
10
10
10
µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc
VCE = 110Vdc
VCE = 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEO
10
10
10
µAdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
VEB = 5.0Vdc
IEBO 10
0.1 µAdc
TO-5
2N4150, 2N5237, 2N5238
TO-39
(TO-205AD)
2N4150S, 2N5237S, 2N5238S
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
T4-LDS-0014 Rev. 4 (082192) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Base Cutoff Current
VCB = 100Vdc
VCB = 150Vdc
VCB = 200Vdc
VCB = 80Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
ICBO
10
10
10
0.1
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
IC = 10Adc, VCE = 5.0Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
All Types
hFE
50
50
50
40
10
200
225
225
120
-
Collector-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
VCE(sat)
0.6
2.5
Vdc
Base-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
VBE(sat)
1.5
25
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2Adc, VCE = 10Vdc, f = 10MHz
|hfe| 1.5 7.5
Forward Current Transfer Ratio
IC = 50mAdc, VCE = 5.0V, f = 1.0kHz 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
hfe
40
40
40
160
160
250
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 350 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time td 50 ns
Rise Time
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = 0.5Adc tr 500 ns
Storage Time ts 1.5 µs
Fall Time
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = -IB2 = -0.5Adc tf 500 ns
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 40Vdc, IC = 0.22Adc
Test 2
VCE = 70Vdc, IC = 90mAdc
Test 3
VCE = 120Vdc, IC = 15mAdc
VCE = 170Vdc, IC = 3.5mAdc
2N5237, 2N5237S
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
