BSM 10 GD 120 DN2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type VCE BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 IC Package Ordering Code 1200V 15A ECONOPACK 2 C67076-A2513-A67 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 15 TC = 80 C 10 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 30 TC = 80 C 20 Power dissipation per IGBT W Ptot TC = 25 C 80 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 1.52 Diode thermal resistance, chip case RthJCD 2 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 C -40 ... + 125 K/W sec 40 / 125 / 56 2006-01-31 BSM 10 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 0.32 mA 4.5 5.5 6.5 VGE = 15 V, IC = 10 A, Tj = 25 C - 2.7 3.2 VGE = 15 V, IC = 10 A, Tj = 125 C - 3.3 3.9 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 0.2 0.4 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 0.8 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 120 AC Characteristics Transconductance VCE = 20 V, IC = 10 A Input capacitance 4.7 pF - 530 - - 80 - - 38 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 2006-01-31 BSM 10 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time ns td(on) VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 150 Rise time - 55 110 - 50 100 - 380 570 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 150 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 150 Fall time tf VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 150 Free-Wheel Diode Diode forward voltage V VF IF = 10 A, VGE = 0 V, Tj = 25 C - 2.9 3.4 IF = 10 A, VGE = 0 V, Tj = 125 C - 2.6 - Reverse recovery time s trr IF = 10 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/s, Tj = 125 C Reverse recovery charge - 0.5 C Qrr IF = 10 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/s Tj = 25 C - 0.4 - Tj = 125 C - 1.2 - 3 2006-01-31 BSM 10 GD 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Ptot Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 90 10 2 W A IC 70 t = 46.0s p 100 s 10 1 60 50 1 ms 10 0 40 30 10 ms 10 -1 20 DC 10 0 0 20 40 60 80 100 120 C 10 -2 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 1 15 A K/W 13 IC V VCE 12 ZthJC 10 0 11 10 10 -1 9 8 D = 0.50 7 10 6 -2 0.20 0.10 5 4 10 -3 3 0.05 single pulse 0.02 0.01 2 1 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 2006-01-31 BSM 10 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C IC 20 20 A A 16 14 17V 15V 13V 11V 9V 7V IC 16 14 12 12 10 10 8 8 6 6 4 4 2 2 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 20 A IC 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE 5 2006-01-31 BSM 10 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 10 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 4 20 V pF VGE 16 C 14 600 V 800 V 10 3 12 Ciss 10 8 10 2 6 Coss 4 Crss 2 0 0 10 20 30 40 50 nC 10 1 0 70 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE 2006-01-31 BSM 10 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 150 par.: VCE = 600 V, VGE = 15 V, IC = 10 A 10 3 10 3 tdoff t tdoff ns t tr 10 2 ns 10 2 tdon tr tdon tf 10 1 0 5 10 15 tf A 10 1 0 25 50 100 150 200 250 IC 350 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 150 par.: VCE = 600V, VGE = 15 V, IC = 10 A 7 7 mWs mWs Eon E E 5 5 4 4 3 3 Eon 2 2 Eoff 1 0 0 5 10 15 A 1 25 IC 0 0 Eoff 50 100 150 200 250 350 RG 7 2006-01-31 BSM 10 GD 120 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 1 20 A IF Diode K/W 16 ZthJC 10 0 14 12 Tj=125C 10 Tj=25C 10 -1 D = 0.50 0.20 8 0.10 6 10 -2 4 0.05 single pulse 0.02 0.01 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF 8 2006-01-31 BSM 10 GD 120 DN2 Gehausemae / Schaltbild Package outline / Circuit diagramm 9 2006-01-31 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. 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