NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N-Channel Enhancement-Mode Single SO-8 Package Features * High Density Power MOSFET with Ultra Low RDS(on) Providing * * * * * Higher Efficiency Miniature SO-8 Surface Mount Package Saving Board Space; Mounting Information for the SO-8 Package is Provided IDSS Specified at Elevated Temperature Drain-to-Source Avalanche Energy Specified Diode Exhibits High Speed, Soft Recovery Pb-Free Package is Available http://onsemi.com 4.2 AMPERES, 20 VOLTS 0.045 W @ VGS = 4.5 V Single N-Channel D Applications * Power Management in Portable and Battery-Powered Products, i.e.: G Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Value Unit Drain-to-Source Voltage VDSS 20 V Drain-to-Gate Voltage (RGS = 1.0 mW) VDGR 20 V Gate-to-Source Voltage - Continuous VGS 10 V Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Continuous Drain Current @ 25C Continuous Drain Current @ 70C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 50 2.5 5.9 4.7 25 C/W W A A A Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Continuous Drain Current @ 25C Continuous Drain Current @ 70C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 4.2 3.3 20 C/W W A A A RqJA PD ID ID IDM 162 0.77 3.3 2.6 15 C/W W A A A Operating and Storage Temperature Range TJ, Tstg -55 to +150 C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 7.5 Apk, L = 6 mH, RG = 25 W) EAS 169 mJ Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds TL 260 C MARKING DIAGRAM AND PIN ASSIGNMENT N.C. Source Source Gate 1 8 2 7 3 4 6 5 Drain Drain Drain Drain Top View E4N01 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t 10 seconds. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t = steady state. 3. Minimum FR-4 or G-10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. January, 2006 - Rev. 3 SO-8 CASE 751 STYLE 13 1 Thermal Resistance, Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Continuous Drain Current @ 25C Continuous Drain Current @ 70C Pulsed Drain Current (Note 4) (c) Semiconductor Components Industries, LLC, 2006 S E4N01 AYWW G G Symbol 1 Device Package Shipping NTMS4N01R2 SO-8 2500 / Tape & Reel SO-8 (Pb-Free) 2500 / Tape & Reel NTMS4N01R2G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMS4N01R2/D NTMS4N01R2 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Note 5) Characteristic Symbol Min Typ Max 20 - - 20 - - - - - - - 0.2 1.0 10 - - - 100 - - -100 0.6 - 0.95 -3.0 1.2 - - - - 0.030 0.035 0.037 0.04 0.05 - - 10 - Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 25C) (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25C) IDSS Gate-Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) IGSS Gate-Body Leakage Current (VGS = -10 Vdc, VDS = 0 Vdc) IGSS Vdc mV/C mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-State Resistance (VGS = 4.5 Vdc, ID = 4.2 Adc) (VGS = 2.7 Vdc, ID = 2.1 Adc) (VGS = 2.5 Vdc, ID = 2.0 Adc) RDS(on) Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc) Vdc mV/C W gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Ciss - 870 1200 Coss - 260 400 Crss - 60 100 td(on) - 13 25 pF SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn-On Delay Time (VDD = 12 Vdc, ID = 4.2 Adc, VGS = 4.5 Vdc, RG = 2.3 W) Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (VDS = 12 Vdc, VGS = 4.5 Vdc, ID = 4.2 Adc) Gate-Source Charge Gate-Drain Charge ns tr - 35 65 td(off) - 45 75 tf - 50 90 Qtot - 11 16 Qgs - 2.0 - Qgd - 3.0 - VSD - - 0.85 0.70 1.1 - Vdc trr - 20 - ns ta - 12 - tb - 8.0 - QRR - 0.01 - nC BODY-DRAIN DIODE RATINGS (Note 6) Diode Forward On-Voltage (IS = 4.2 Adc, VGS = 0 Vdc) (IS = 4.2 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time (IS = 4.2 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Handling precautions to protect against electrostatic discharge is mandatory. 6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 mC NTMS4N01R2 8V 2.1 V 6 1.9 V 4.5 V 3.1 V 2.7 V 2.5 V 2.3 V 5 4 3 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7 TJ = 25C 1.7 V 2 1 0 1.5 V VGS = 1.3 V 0 0.25 0.5 0.75 1 1.25 1.5 1.75 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 6 4 100C 2 25C TJ = -55C 0 2 VDS 10 V 8 0.5 RDS(on), DRAIN-TO SOURCE-RESISTANCE (W) 0.08 ID = 4.2 A TJ = 25C 0.07 0.06 0.05 0.04 0.03 0.02 0 2 4 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 0.05 TJ = 25C 0.04 VGS = 2.5 V VGS = 2.7 V 0.03 VGS = 4.5 V 0.02 0.01 0 Figure 3. On-Resistance versus Gate-To-Source Voltage 2 4 6 8 ID, DRAIN CURRENT (AMPS) 10 Figure 4. On-Resistance versus Drain Current and Gate Voltage 10,000 1.6 VGS = 0 V ID = 4.2 A VGS = 4.5 V 1.4 1.2 1 TJ = 150C 1000 TJ = 125C 0.8 0.6 -50 2.5 Figure 2. Transfer Characteristics IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO SOURCE-RESISTANCE (W) Figure 1. On-Region Characteristics 1 1.5 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 100 150 2 Figure 5. On-Resistance Variation with Temperature 4 6 8 10 12 14 16 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTMS4N01R2 2500 VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) Ciss TJ = 25C 2000 1500 Crss 1000 Ciss 500 Coss Crss 0 8 6 4 2 0 2 VGS VDS 4 6 8 10 12 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 20 QT VGS 4 16 VDS 3 12 Q1 Q2 8 2 ID = 4.2 A TJ = 25C 1 4 0 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 1000 1000 VDD = 10 V ID = 2.1 A VGS = 4.5 V t, TIME (ns) t, TIME (ns) VDD = 10 V ID = 4.2 A VGS = 4.5 V td(off) tf tr 100 tf 100 td(off) tr td(on) td(on) 10 10 1 10 100 1 10 100 RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance http://onsemi.com 4 NTMS4N01R2 DRAIN-TO-SOURCE DIODE CHARACTERISTICS 100 VGS = 0 V TJ = 25C ID , DRAIN CURRENT (AMPS) IS, SOURCE CURRENT (AMPS) 4 3 2 1 0 10 0.4 0.5 0.6 0.7 0.8 100 ms 1.0 ms 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10s max. 0.01 0.3 VGS = 20 V SINGLE PULSE TC = 25C 0.9 0.1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current Figure 12. Maximum Rated Forward Biased Safe Operating Area di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 13. Diode Reverse Recovery Waveform TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Normalized to qja at 10s. Chip 0.0022 W 0.0210 W 0.2587 W 0.7023 W 0.6863 W 0.0020 F 0.0207 F 0.3517 F 3.1413 F 108.44 F 0.01 SINGLE PULSE Ambient 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) Figure 14. Thermal Response http://onsemi.com 5 1.0E+01 1.0E+02 1.0E+03 NTMS4N01R2 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -X- A 8 5 0.25 (0.010) S B M Y M 1 4 K -Y- G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE -Z- 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 STYLE 13: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 N.C. SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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