1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BF421 BF423 Unit
Collector–Emitter Voltage VCEO –300 –250 Vdc
Collector–Base Voltage VCBO –300 –250 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0) BF421
BF423
V(BR)CEO –300
–250 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100
m
Adc, IE = 0) BF421
BF423
V(BR)CBO –300
–250 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0) BF421
BF423
V(BR)EBO –5.0
–5.0 —
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0) BF421
BF423
ICBO —
—–0.01
—
m
Adc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0) BF421
BF423
IEBO —
—–100
—
nAdc
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
Order this document
by BF421/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –25 mA, VCE = –20 Vdc) BF421
BF423
hFE 50
50 —
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc
Base–Emitter Saturation Voltage
(IC = –20 mA, IB = –2.0 mA) VBE(sat) — –2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) fT60 — MHz
Common Emitter Feedback Capacitance
(VCB = –30 Vdc, IE = 0, f = 1.0 MHz) Cre — 2.8 pF
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
150
–1.0
15
hFE, DC CURRENT GAIN
TJ = +125
°
C
+25
°
C
–55
°
C
VCE = –10 Vdc
20
30
50
70
100
–2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100
C, CAPACITANCE (pF)
Figure 2. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
–0.1
100
50
20
1.0 Ccb
10
2.0
5.0
Cib
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA) –50–20–10–5.0–2.0
100
60
40
30
20
0
TJ = 25
°
C
VCE = –20 Vdc
f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
–1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V, VOLTAGE (VOLTS)
–1.0
0
VCE(sat) @ IC/IB = 10 mA
VBE @ VCE = –10 V
–0.8
–0.6
–0.4
–0.2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
BF423
Figure 5. Active Region — Safe Operating Area
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION
BF421
100
µ
s
1.0 ms
TJ = 150
°
C
1.5 WATT THERMAL
LIMITATION @ TC = 25
°
C
625 mW THERMAL
LIMITATION @ TA = 25
°
C
–500
–5.0
–10
–20
–50
–100
–200
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000
80
–100
–50–20–10–5.0–2.0–1.0 –100 –3.0 –5.0 –10 –20 –30 –50 –100 –200 –300
1.0 s
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BF421/D
*BF421/D*
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