SPP11N80C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=2.2 A, VDD=50 V 470 mJ
Avalanche energy, repetitive tAR2),3) EAR ID=11 A, VDD=50 V
Avalanche current, repetitive tAR2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0…640 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
±30
156
-55 ... 150
0.2
11
50
±20
Value
11
7.1
33
VDS 800
V
RDS(on)max @ Tj = 25°C 0.45 Ω
Qg,typ 64 nC
Product Summary
Type Package Marking
SPP11N80C3 PG-TO220-3 11N80C3
PG-TO220-3
Rev. 2.91page 1 2011-09-27
SPP11N80C3
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current2) IS,pulse 33
Reverse diode dv/dt4) dv/dt4V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 0.8 K/W
RthJA leaded - - 62
Soldering temperature,
wave soldering only allowed at leads
Tsold 1.6 mm (0.063 in.)
from case for 10s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 800 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=11 A -870 -
Gate threshold voltage VGS(th) VDS=VGS, ID=0.68 mA 2.1 33.9
Zero gate voltage drain current IDSS VDS=800 V, VGS=0 V,
Tj=25 °C - - 20 µA
VDS=800 V, VGS=0 V,
Tj=150 °C -100 -
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=7.1 A,
Tj=25 °C -0.39 0.45 Ω
VGS=10 V, ID=7.1 A,
Tj=150 °C -1.05 -
Gate resistance RGf=1 MHz, open drain -1.2 -Ω
Value
TC=25 °C 11
Values
Thermal resistance, junction -
ambient
Rev. 2.91page 2 2011-09-27
SPP11N80C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -1600 -pF
Output capacitance Coss -65 -
Effective output capacitance, energy
related5) Co(er) -50 -
Effective output capacitance, time
related6) Co(tr) -140 -
Turn-on delay time td(on) -25 -ns
Rise time tr-15 -
Turn-off delay time td(off) -72 -
Fall time tf-10 -
Gate Charge Characteristics
Gate to source charge Qgs -8-nC
Gate to drain charge Qgd -30 -
Gate charge total Qg-64 85
Gate plateau voltage Vplateau -5.5 -V
Reverse Diode
Diode forward voltage VSD VGS=0 V, IF=IS=11 A,
Tj=25 °C -11.2 V
Reverse recovery time trr -550 -ns
Reverse recovery charge Qrr -10 -µC
Peak reverse recovery current Irrm -33 -A
5) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
4) ISD=ID, di/dt=200A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
VR=400 V,
IF=IS=11 A,
diF/dt=100 A/µs
2) Pulse width tp limited by Tj,max
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
1) J-STD20 and JESD22
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=0/10 V, ID=11 A,
RG=7.5 ?, Tj=25 °C
VDD=640 V, ID=11 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
Rev. 2.91page 3 2011-09-27
SPP11N80C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); Tj=25 °C; tp=10 µs
parameter: D=tp/Tparameter: VGS
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
1 10 100 1000
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp [s]
ZthJC [K/W]
4.5 V
5 V
5.5 V
6 V
10 V
20 V
0
10
20
30
40
0 5 10 15 20 25
VDS [V]
ID [A]
limited by on-state
resistance
Rev. 2.91page 4 2011-09-27
SPP11N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C; tp=10 µs RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=7.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max; tp=10 µs
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
10
20
30
40
0 2 4 6 8 10
VGS [V]
ID [A]
6 V
10 V
20 V
4.5 V
5 V
5.5 V
0
3
6
9
12
15
18
21
0 5 10 15 20 25
VDS [V]
ID [A]
4 V 4.5 V 5 V
6 V
6.5 V
10 V
20 V
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
ID [A]
RDS(on) [Ω]
Rev. 2.91page 5 2011-09-27
SPP11N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=11 A pulsed IF=f(VSD); tp=10 µs
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=2.2 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
150°C (98%)
25°C (98°C)
102
101
100
10-1
00.5 11.5 2
VSD [V]
IF [A]
160 V
640 V
0
2
4
6
8
10
0 10 20 30 40 50 60 70
Qgate [nC]
VGS [V]
680
720
760
800
840
880
920
960
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0
100
200
300
400
500
25 50 75 100 125 150
Tj [°C]
EAS [mJ]
Rev. 2.91page 6 2011-09-27
SPP11N80C3
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS)
0
2
4
6
8
10
12
0 100 200 300 400 500 600 700 800
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
104
103
102
101
100
0 100 200 300 400 500 600 700 800
VDS [V]
C [pF]
Rev. 2.91page 7 2011-09-27
SPP11N80C3
Definition of diode switching characteristics
Rev. 2.91page 8 2011-09-27
SPP11N80C3
PG-TO220-3: Outline
Dimensions in mm/inches
Rev. 2.91page 9 2011-09-27
SPP11N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
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Rev. 2.91page 10 2011-09-27
