2N55551ZL1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

June, 2004 − Rev. 3 1Publication Order Number:

2N5550/D

2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

•Device Marking: Device Type, e.g., 2N5550, Date Code

MAXIMUM RATINGS

Rating Symbol 2N5550 2N5551 Unit

Collector − Emitter Voltage VCEO 140 160 Vdc

Collector − Base Voltage VCBO 160 180 Vdc

Emitter − Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RJA 200 °C/W

Thermal Resistance,

Junction−to−Case RJC 83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

TO−92

CASE 29

STYLE 1

123

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

BASE

EMITTER

55xx Specific Device Code

Y = Year

WW = W ork Week

MARKING

DIAGRAM

55xx

YWW

2N5550, 2N5551

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0 ) 2N5550

2N5551

V(BR)CEO 140

160 −

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 Adc, IE = 0 ) 2N5550

2N5551

V(BR)CBO 160

180 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0) 2N5550

(VCB = 120 Vdc, IE = 0) 2N5551

(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550

(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551

ICBO −

−

100

nAdc

Adc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0) IEBO − 50 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550

2N5551

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550

2N5551

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550

2N5551

hFE 60

−

250

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550

2N5551

VCE(sat) −

−

0.15

0.25

0.20

Vdc

Base−Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550

2N5551

VBE(sat) −

−

1.0

1.2

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 300 MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550

2N5551

Cibo −

−30

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 50 200 −

Noise Figure

(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, 2N5550

f = 1.0 kHz) 2N5551

NF −

−10

8.0

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

2N5550, 2N5551

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

2N5550 TO−92 5,000 Unit / Bulk

2N5550RLRA TO−92 2,000 Tape & Reel

2N5550RLRP TO−92 2,000 Tape & Ammo Box

2N5550RLRPG TO−92

(Pb−Free) 2,000 Tape & Ammo Box

2N5551 TO−92 5,000 Unit / Bulk

2N5551G TO−92

(Pb−Free) 5,000 Unit / Bulk

2N5551RL1 TO−92 2,000 Tape & Reel

2N5551RLRA TO−92 2,000 Tape & Reel

2N5551RLRM TO−92 2,000 Tape & Ammo Box

2N5551RLRP TO−92 2,000 Tape & Ammo Box

2N55551ZL1 TO−92 2,000 Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-

tions Brochure, BRD8011/D.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

h , DC CURRENT GAIN

TJ = 125°C

−55°C

25°C

5.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

200

300

100

7.0

VCE = 1.0 V

VCE = 5.0 V

2N5550, 2N5551

http://onsemi.com

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0.3

0.005 0.01 0.2 0.5 1.0 2.0 20 50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02 0.05 0.1 10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

10 mA 30 mA 100 mA

5.0

Figure 3. Collector Cut−Off Region

IC, COLLECTOR CURRENT (mA)

1.0

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

2.5

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VC for VCE(sat)

VB for VBE(sat)

0.1 0.2 0.5

Figure 4. “On” Voltages

VBE, BASE−EMITTER VOLTAGE (VOLTS)

101

10−5

Figure 5. Temperature Coefficients

TJ = −55°C to +135°C

0.4 0.3 0.1

0.8

0.6

0.4

0.2

100

10−1

10−2

10−3

10−4

0.2 0 0.1 0.2 0.40.3 0.60.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = ICES

, COLLECTOR CURRENT (A)µIC

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

3.0 30

2.0

1.5

1.0

0.5

− 0.5

− 1.0

− 1.5

− 2.0

− 2.5

REVERSE FORWARD

0.3 1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

2N5550, 2N5551

http://onsemi.com

C, CAPACITANCE (pF)

Figure 6. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

Cibo

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

Cobo

Figure 7. Capacitances

10.2 V

Vin

10 s

INPUT PULSE

VBB

−8.8 V

100

5.1 k

0.25 F

Vin 100 1N914

Vout

VCC

30 V

3.0 k

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

TJ = 25°C

Figure 8. Turn−On Time

IC, COLLECTOR CURRENT (mA)

1000

Figure 9. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

0.3 1.0 10 20 30 50

5000

0.50.2

t, TIME (ns)

100

200

300

500

2.0 100 200

IC/IB = 10

TJ = 25°C

tr @ VCC = 120 V

100

200

300

500

3.0 5.0

tr @ VCC = 30 V

td @ VEB(off) = 1.0 V

VCC = 120 V

3000

2000

1000

0.3 1.0 10 20 30 500.50.2 2.0 100 2003.0 5.0

IC/IB = 10

TJ = 25°C

tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

2N5550, 2N5551

http://onsemi.com

PACKAGE DIMENSIONS

TO−92

TO−226AA

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer ’s technical e xperts. SCILLC does not convey any license under

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Phone: 81−3−5773−3850

2N5550/D

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