2SC5548A
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A)
High collector breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 600 V
Collector-emitter voltage VCEO 400 V
Emitter-base voltage VEBO 7 V
DC IC 2
Collector current
Pulse ICP 4
A
Base current IB 0.5 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
15
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
Start of commercial production
1999-04
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 480 V, IE = 0 20 μA
Emitter cut-off current IEBO V
EB = 7 V, IC = 0 10 μA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 V
hFE (1) V
CE = 5 V, IC = 1 mA 20
DC current gain
hFE (2) V
CE = 5 V, IC = 0.2 A 40 100
Collector emitter saturation voltage VCE (sat) I
C = 0.8 A, IB = 0.1 A 1.0 V
Base-emitter saturation voltage VBE (sat) I
C = 0.8 A, IB = 0.1 A 1.3 V
Rise time tr 0.5
Storage time tstg 3.0
Switching time
Fall time tf
IB1 = 0.1 A, IB2 = 0.2 A
DUTY CYCLE 1%
0.3
μs
Marking
C5548A
Lot No.
Note 1
Part No. (or abbreviation code)
IB1
20 μsV
CC 200 V
INPUT
OUT-
PUT
250
IB21
IB1
IB2
IC
Note 1: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical
and electronic equipment.
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Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
PC – Ta
40
60
100
0
0
Common emitter
Tc = 25°C
150
IB = 10 mA
80
20
1.6
1.2
0.4
2 4 6 8 10
0.8
2.0
200
0.01
10
Common emitter
IC/IB = 8
Tc = 100°C
55
25
3
0.3
0.03
0.03 0.3 1 10
1
0.1
0.1 3
1000
1
0.001
Common emitter
VCE = 5 V
Tc = 100°C
55
25
0.003 0.01 0.03 0.1 0.3 1
300
3
100
30
10
3
10
0.01
Tc = 100°C
25 55
3
0.3
0.1
0.1 0.3 3
Common emitter
IC/IB = 8
0.03 1
1
(1) Tc = Ta
infinite heat sink
(2) No heat sink
0
0 25 50 75 100 125 150 175 200
4
8
12
16
20
(1)
(2)
0.4
2.0
0 1.6
0.8
1.2
1.6
0.4 0.8 1.2
Common emitter
VCE = 5 V
Tc = 100°C 55 25
0
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rth – tw
Transient thermal resistance rth (°C/W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Pulse width tw (s)
Collector current IC (A)
Switching Characteristics – IC
Switching time (μs)
IC = 8IB1
2IB1 = IB2
VCC 200 V
Pulse width = 20μs
Duty cycle
1
Tc = 25°C
5
0.1
0.1 0.3 0.5 1 3 5 10
1
3
0.3
0.5
tstg
tf
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
300
0.5
0.001 1000
0.01 0.1 1 10 100
1
3
10
5
30
100
50
(1)
(2)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
0.001
10
DC operation
Tc = 25°C
1 ms*
10 ms*
VCEO max
100 μs*
100 ms*
IC max (pulsed)*
1 3 100 100010 30 300
0.1
1
0.01
10 μs*
3
5
0.3
0.5
0.03
0.05
0.003
0.005
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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