SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description Features SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. * * * * * * This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. 650V @ Tj = 150C Typ. Rds(on) = 0.32 Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { G D S G{ TO-220AB FCP Series Symbol ID Drain Current TO-220F GD S Absolute Maximum Ratings FCPF Series Drain Current { S TC = 25C unless otherwise noted Parameter - Continuous (TC = 25C) FCP11N60 11 - Continuous (TC = 100C) IDM - Pulsed (Note 1) FCPF11N60(T) 11* Units A 7 7* A 33 33* A 30 V 340 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12.5 4.5 mJ V/ns W W/C C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 125 1.0 36 0.29 -55 to +150 300 C * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient (c)2009 Fairchild Semiconductor Corporation FCP11N60 1.0 FCPF11N60(T) 3.5 Units C/W 0.5 -- C/W 62.5 62.5 C/W Rev.B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T November 2009 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units VGS = 0 V, ID = 250 A, TJ = 25C 600 -- -- V VGS = 0 V, ID = 250 A, TJ = 150C -- 650 -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 -- V/C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 11 A -- 700 -- V IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A VGS = 30 V, VDS = 0 V -- -- 100 nA VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.32 0.38 -- 9.7 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance Equivalent Series Resistance ESR VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V Drain Open, f=1MHz -- 1148 1490 pF -- 671 870 pF -- 63 82 pF -- 35 -- pF --- 95 2.5 --- pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 11 A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) -- 34 80 ns -- 98 205 ns -- 119 250 ns -- 56 120 ns -- 40 52 nC -- 7.2 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward VoltVGS = 0 V, IS = 11 A age VGS = 0 V, IS = 11 A, Reverse Recovery Time dIF / dt = 100 A/s Reverse Recovery Charge -- -- 33 A -- -- 1.4 V -- 390 -- ns -- 5.7 -- C VSD trr Qrr (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Elerical Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 s Pulse Test o 2. TC = 25 C -1 10 -1 0 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 s Pulse Test -1 10 1 10 10 10 2 4 VDS, Drain-Source Voltage [V] 6 8 10 VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 0.2 1 10 0 10 o o 150 C 25 C * Notes : 1. VGS = 0V 2. 250 s Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 -1 10 40 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4000 Coss 3000 * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 2000 Crss 1000 0 -1 10 0 10 1 10 VDS = 100V VGS, Gate-Source Voltage [V] 5000 Capacitance [pF] 0.2 ID, Drain Current [A] VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 11A 0 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 o 100 150 200 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2 o 2 10 Operation in This Area is Limited by R DS(on) 100 us 1 10 ID, Drain Current [A] ID, Drain Current [A] 50 TJ, Junction Temperature [ C] 10 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 10 0 TJ, Junction Temperature [ C] -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for FCPF11N60(T) Figure 9-1. Maximum Safe Operating Area for FCP11N60 12.5 ID, Drain Current [A] 10.0 7.5 5.0 2.5 0.0 25 50 75 100 125 150 o TC, Case Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Typical Characteristics FCP11N60 / FCPF11N60 / FCPF11N60T Typical Characteristics (Continued) 0 10 ZJC(t), Thermal Response D = 0 .5 0 .2 10 * N o te s : o 1 . Z J C (t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 -1 0 .0 5 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for FCP11N60 D = 0 .5 ZJC(t), Thermal Response 10 0 0 .2 0 .1 * N o te s : o 1 . Z J C (t) = 3 .5 C /W M a x. 2 . D u ty F a cto r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 sin g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF11N60(T) (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2009 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Mechanical Dimensions TO-220AB Dimensions in Millimeters (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 FCP11N60 / FCPF11N60 / FCPF11N60T Mechanical Dimensions FCP11N60 / FCPF11N60 / FCPF11N60T Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters (c)2009 Fairchild Semiconductor Corporation Rev. B2, October 2003 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FPSTM The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) (R) Build it NowTM FRFET Programmable Active DroopTM SM (R) CorePLUSTM Global Power Resource QFET TinyBoostTM CorePOWERTM Green FPSTM QSTM TinyBuckTM Green FPSTM e-SeriesTM CROSSVOLTTM Quiet SeriesTM TinyCalcTM GmaxTM CTLTM RapidConfigureTM TinyLogic(R) GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TM TinyPowerTM ISOPLANARTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM EZSWITCHTM* MegaBuckTM SmartMaxTM TinyWireTM TM* MICROCOUPLERTM SMART STARTTM (R) TriFault DetectTM MicroFETTM SPM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM (R) Fairchild SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 Motion-SPMTM UHC(R) (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R) FlashWriter * Power-SPMTM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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