©2009 Fairchild Semiconductor Corporation Rev.B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
November 2009
SuperFET
TM
FCP11N60 / FCPF11N60 / FCPF11N60T
General Description
SuperFETTM is, Fairchild’s proprietary, new generation of
high voltage MOSFET family that is utilizing an advanced
charge balance mechanism for outstanding low on-
resistance and lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
Features
• 650V @ Tj = 150°C
• Typ. Rds(on) = 0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff = 95pF)
• 100% avalanche tested
• RoHS Compliant
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FCP11N60 FCPF11N60(T) Units
IDDrain Current - Continuous (TC = 25°C) 11 11* A
- Continuous (TC = 100°C) 77* A
IDM Drain Current - Pulsed (Note 1) 33 33* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ
IAR Avalanche Current (Note 1) 11 A
EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 125 36 W
- Derate above 25°C 1.0 0.29 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Thermal Characteristics
Symbol Parameter FCP11N60 FCPF11N60(T) Units
RθJC Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
●
●
●
▲
{
{
{
◀
●
●
●
▲
{
{
{
◀
S
D
G
* Drain current limited by maximum junction termperature.
G D S
TO-220AB
FCP Series TO-220F
FCPF Series
GS
D
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
©2009 Fairchild Semiconductor Corporation
Elerical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V
VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C
BVDS Drain-Source Avalanche Break-
down Voltage VGS = 0 V, ID = 11 A -- 700 -- V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1μA
VDS = 480 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, For-
ward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current,
Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω
gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) -- 9.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1148 1490 pF
Coss Output Capacitance -- 671 870 pF
Crss Reverse Transfer Capacitance -- 63 82 pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V,
f = 1.0 MHz -- 35 -- pF
Coss eff. Effective Output Capacitance VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF
ESR Equivalent Series Resistance Drain Open, f=1MHz -- 2.5 -- Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 11 A,
RG = 25 Ω
(Note 4, 5)
-- 34 80 ns
trTurn-On Rise Time -- 98 205 ns
td(off) Turn-Off Delay Time -- 119 250 ns
tfTurn-Off Fall Time -- 56 120 ns
QgTotal Gate Charge VDS = 480 V, ID = 11 A,
VGS = 10 V
(Note 4, 5)
-- 40 52 nC
Qgs Gate-Source Charge -- 7.2 -- nC
Qgd Gate-Drain Charge -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 11 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A
VSD Drain-Source Diode Forward Volt-
age VGS = 0 V, IS = 11 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/μs (Note 4)
-- 390 -- ns
Qrr Reverse Recovery Charge -- 5.7 -- μC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 100101
10-1
100
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250 μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
* Note
1. VDS = 40V
2. 250 μs Pulse Test
-55oC
150oC
25oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40
0.0
0.2
0.4
0.6
0.8
1.0
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
10-1 100101
0
1000
2000
3000
4000
5000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 11A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
25 oC
150 oC
* Notes :
1. VGS = 0V
2. 250 μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
©2009 Fairchild Semiconductor Corporation Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Typical Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID
= 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0.0
2.5
5.0
7.5
10.0
12.5
ID, Drain Current [A]
TC, Case Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9-1. Maximum Safe Operating Area
for FCP11N60
Figure 10. Maximum Drain Current
vs. Case Temperature
100101102103
10-2
10-1
100
101
102Operation in This Area
is Limited by R DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FCPF11N60(T)
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. Z θJC (t) = 1.0 oC/W Max.
2. D uty Factor, D =t1/t2
3. T JM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
t1
PDM
t2
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. Z θJC(t) = 3.5 oC/W Max.
2. D uty F actor, D =t1/t2
3. T JM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
Figure 11-1. Transient Thermal Response Curve for FCP11N60
Figure 11-2. Transient Thermal Response Curve for FCPF11N60(T)
t1
PDM
t2
©2009 Fairchild Semiconductor Corporation Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
Rev. B2, October 2003©2009 Fairchild Semiconductor Corporation
FCP11N60 / FCPF11N60 / FCPF11N60T
Mechanical Dimensions
Dimensions in Millimeters
TO-220AB
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
©2009 Fairchild Semiconductor Corporation
Mechanical Dimensions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
©2009 Fairchild Semiconductor Corporation
Package Dimensions
Dimensions in Millimeters
TO-220F Potted
* Front/Back Side Isolation Voltage : AC 2500V
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I41
©2009 Fairchild Semiconductor Corporation Rev. B2, October 2003