ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRSM = 2800 V
Rectifier Diode
5SDD 51L2800
IF(AV)M =5380 A
IF(RMS) =8450 A
IFSM = 65×10
3
A
VF0 = 0.77 V
rF=0.082 mW
Doc. No. 5S YA1103-02 Apr. 13
· Patented free-floating silicon technology
· Very low on-state losses
· High average and surge current.
Blocking
Maximum rated values 1)
Parameter
Symbol
Conditions
Value
Unit
Max repetitive peak reverse voltage VRRM f = 50 Hz, tp
= 10 ms,
Tvj = 0…175 ° C 2000 V
Max non-repetitive peak reverse
voltage VRSM f = 5 Hz, tp = 10 ms,
Tvj = 0…175 ° C 2800 V
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Rev erse leakage c urrent IRRM VRRM, Tvj = 175 °C 400 mA
Mechanical data
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Mounting force FM63 70 77 kN
Acceleration a Devi ce unclamped 50 m/s2
Acceleration a Devi ce clamped 100 m/s2
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Weight m 1.45 kg
Housing t hick ness H FM = 70 kN, Ta = 25 °C 25.7 26.3 mm
Surf ace creepage distance DS35 mm
Air stri ke distance Da14 mm
1) Maxi mum rat ed values indicate li mits bey ond which damage to the device may oc cu r
5SDD 51L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. N o. 5SYA1103-02 Apr. 13 page 2 of 6
On-state
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Average on-state current IF(AV)M 50 Hz, Half sine wave, TC = 85 °C 5380 A
RMS on-state cur rent IF(RMS) 8450 A
Peak non-repetitive surge
current IFSM tp = 10 ms, T vj = 175 °C,
sine half wave,
VR = 0 V, after surge
65×103A
Limiting load integral I2t 21.13×106A2s
Peak non-repetitive surge
current IFSM tp = 10 ms, T vj = 175 °C,
sine half wave,
VR = 0.6*VRRM, after surge
A
Limiting load integral I2t A2s
Characteristic values
Parameter
Conditions
min
typ
max
Unit
On-state voltage VFIF = 5000 A, Tvj = 175 °C 1.18 V
Threshold vo ltage VF0 Tvj = 175 °C
IT = 2500...7500 A 0.77 V
Sl ope resistance rF0.082 mW
Switching
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Rev erse recovery charge Qrr diF/d t = -10 A/µs, VR = 200 V
IF = 4000 A, Tvj = 175 °C 5000 7000 µAs
Rev erse recovery current IRM A
5SDD 51L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. N o. 5SYA1103-02 Apr. 13 page 3 of 6
Thermal
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Operating junction
temperature range Tvj 0175 °C
Storage temperature range Tstg -40 150 °C
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Therm al resistance junction
to case Rth(j-c) Double-side cooled
Fm = 63...77 kN 8K/kW
Rth(j-c)A Anode- si de cooled
Fm = 63...77 kN 16 K/kW
Rth(j-c)C Cat hode-side cooled
Fm = 63...77 kN 16 K/kW
Therm al resistance c ase to
heatsink Rth(c-h) Double-si de cooled
Fm = 63...77 kN 3K/kW
Rth(c-h) Single-side cool ed
Fm = 63...77 kN 6K/kW
Analyti cal fun ction for tran sient thermal
impedance:
)e-(1R=(t)Z n
1i
t/-
ithc)-th(j å
=
i
t
i 1 2 3 4
Rth i(K/kW) 5.364 1.586 0.638 0.412
ti(s) 0.5339 0.0684 0.0067 0.0013
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5SDD 51L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. N o. 5SYA1103-02 Apr. 13 page 4 of 6
Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics
Fig. 4 On-stat e power di ssipat ion v s. mean on-state
current Fig. 5 Max . permi ssibl e case temperat ure v s. m ean
on-stat e current
5SDD 51L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. N o. 5SYA1103-02 Apr. 13 page 5 of 6
Fig. 6 Rev erse recov ery charge v s. decay rat e of on-
state cur rent
5SDD 51L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5S YA1103-02 Apr. 13
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzer land
Telephone +41 (0)58 586 1419
Fax + 41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 7 Device Outline Drawing
Related documents:
5SYA 2020 Desig n of RC -Snubbers for Phase Control Applications
5SYA 2029 High Power Rectifier Diodes
5SYA 2036 Rec ommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2048 Fi eld Measur ements on H igh Power Press-Pack Sem iconductors
5SYA 2051 Voltag e Ratings of High Power Semiconductors
5SZK 9104 Specification of envi ronmental class for pressure contact diodes, PCTs and GTO, Storage
5SZK 9105 Specification of envi ronmental class for pressure contact diodes, PCTs and GTO, Trans portation
5SZK 9115 Sp ecification of en vironm ental class for presspack Diodes, PCTs and GTOs, Operation (Indus try)
5SZK 9116 Sp ecificati on of environmental cl ass for presspack Diodes, PCTs and GTOs, Oper ation (Traction)
Pl ease ref er to http://www.abb.com/semicon ductors for current version of documents.