Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FASR BPW 34 FA BPW 34 FAS BPW 34 FASR Wesentliche Merkmale Features * Speziell geeignet fur den Wellenlangenbereich von 730 nm bis 1100 nm * Kurze Schaltzeit (typ. 20 ns) * DIL-Plastikbauform mit hoher Packungsdichte * BPW 34 FAS / FASR: geeignet fur Reflow Loten * Especially suitable for the wavelength range of 730 nm to 1100 nm * Short switching time (typ. 20 ns) * DIL plastic package with high packing density * BPW 34 FAS / FASR: Suitable for reflow soldering Anwendungen Applications * Automotomobil (z.B. Regensensor, Headset) * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Geratefernsteuerung * Lichtschranken * Automotive (eg rain sensor, headset) * IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment * Photointerrupters Typ Type Bestellnummer Ordering Code Fotostrom, Ee=1 mW/cm2, VR = 5 V, = 870 nm Photocurrent Ip (A) BPW 34 FA Q62702P1129 50 (40) BPW 34 FAS Q65110A3121 50 (40) BPW 34 FASR Q65110A2699 50 (40) 2007-03-30 1 BPW 34 FA, BPW 34 FAS, BPW 34 FASR Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR VR (t < 2 min) 16 32 V V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom Photocurrent VR = 5 V, Ee=1 mW/cm2 Ip 50 (40) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 730 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.65 x 2.65 mm x mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity S 0.65 A/W Quantenausbeute Quantum yield 0.93 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 320 ( 250) mV 2007-03-30 LxW 2 BPW 34 FA, BPW 34 FAS, BPW 34 FASR Kennwerte (TA = 25 C, = 870 nm) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlussstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 23 A Anstiegs- und Abfallzeit des Fotostroms Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr , tf 20 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.03 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.9 x 10- 14 Nachweisgrenze, VR = 10 V, Detection limit D* 6.8 x 1012 2007-03-30 3 W -----------Hz cm x Hz -------------------------W BPW 34 FA, BPW 34 FAS, BPW 34 FASR Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) Relative Spectral Sensitivity Srel = f () OHF01430 100 P Srel % OHF01428 10 3 A 10 4 mV VO Total Power Dissipation Ptot = f (TA) OHF00958 160 mW Ptot 140 80 10 2 10 3 70 VO 100 60 10 1 50 10 2 40 120 P 80 60 30 10 0 10 1 -1 0 40 20 20 10 10 0 400 600 800 1000 nm 1200 10 0 10 2 W/cm 2 10 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee Dark Current IR = f (VR), E = 0 R 10 1 OHF00081 100 C pA 80 C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-03-30 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 C 100 TA BPW 34 FA, BPW 34 FAS, BPW 34 FASR Mazeichnung Package Outlines BPW 34 FA 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 FAS 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Mae in mm (inch) / Dimensions in mm (inch). 2007-03-30 5 BPW 34 FA, BPW 34 FAS, BPW 34 FASR BPW 34 FASR 0...5 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 6.7 (0.264) 6.2 (0.244) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Mae in mm (inch) / Dimensions in mm (inch). 2007-03-30 6 BPW 34 FA, BPW 34 FAS, BPW 34 FASR Lotbedingungen Soldering Conditions BPW 34 FAS BPW 34 FASR Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering BPW 34 FA OHLY0598 300 C T (nach CECC 00802) (acc. to CECC 00802) 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2007-03-30 7 s 250 BPW 34 FA, BPW 34 FAS, BPW 34 FASR Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-03-30 8