MMST4401
NPN Small Signal
Transistors
Features
• Power dissipation: 200mW (Tamb=25℃)
• Collector current: 0.6A
• Marking : K3X
• Operating and Storage junction temperature range
-55℃ to + 150℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min Max Units
OFF CHARACTERISTICS (2)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0) 40 --- Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 60 --- Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0) 6.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=35Vdc, IE=0Vdc) --- 0.1 µAdc
ICEO Collector Cutoff Current
(VCE=35Vdc, IB=0Vdc) --- 0.1 µAdc
IEBO Emitter Cutoff Current
(VEB=5Vdc, IC=0Vdc) --- 0.1 µAdc
hFE
DC Current Gain
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=2.0Vdc) 100
40 300
---
---
---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc) --- 0.4
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc) ---
0.95
Vdc
fT Current Gain-Bandwidth Product
(VCE=10Vdc, IC=20mAdc, f=100MHz) 250
--- MHz
Cob Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0) --- 6.5 pF
td Delay Time
tr Rise Time VCC=30V,IC=150uA,
VBE(off)=2V,IB1=15mA ---
--- 15
20 ns
ns
ts Storage Time
tf Fall Time VCC=30V, IC=150mA,
IB1=IB2=15mA ---
--- 225
30 ns
ns
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2 2006/05/13
SOT-323
Suggested Solder
Pad Layout
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .012 .016 .30 .40
A
C
D
F
G
DIMENSIONS
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
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• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0