Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Technical Specification of 1. 27m~1.61m MQW-DFB Laser Diode with Aspherical Lens Cap of Short Focal Distance Type for CWDM SLT1440-xnnnx Series RoHS Compliant Page 1 of 8 Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 1. General SLT1440-xnnnx Series are 1.27m~1.61m InGaAsP/InP MQW-DFB laser diodes fabricated by OMVPE entirely. These diodes have low threshold current and high performance at high temperature. A laser diode is mounted into a coaxial package integrated with an lnGaAs monitor PD and an aspherical lens cap of 7.5mm focal distance. 2. Package dimension and pin assignment (See attached appendix.) 3. Absolute maximum ratings Parameter Storage temperature Operating case temperature Peak optical output power Forward current (LD) Reverse voltage (LD) Reverse voltage (PD) Reverse current (PD) Soldering temperature (<10s) Symbol Ratings Tstg -40~+100 Top 0~+70 Po 20 IfL 150 VrL 2 VrP 15 IrP 2 Stemp 260 Unit C C mW mA V V mA C Page 2 of 8 Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 4. Electrical and optical characteristics (Po=5mW, Tc=+25C, unless otherwise noted.) Parameter Symbol Threshold current Ith Optical output power Po Operating voltage Vf Slope efficiency Se Condition CW CW, Tc=0~+70C CW, If=Ith+20mA CW, If=Ith+20mA, Tc=0~+70C CW, Tc=0~+70C CW CW, Tc=0~+70C CW Peak wavelength p Wavelength Temperature -- CW, Tc=0~+70C Coefficiency Side-mode suppression ratio SSR CW, Tc=0~+70C Spectral width CW, 20dB down, Tc=0~+70C Rise time tr lb=lth, 20-80%, Tc=0~+70C Fall time tf Ib=Ith, 80-20%, Tc=0~+70C Monitor current Im CW, VrP=5V, Tc=0~+70C VrP=5V Monitor dark current ld VrP=5V, Tc=0~+70C Monitor capacitance C VrP=5V, f=1MHz Min. -- -- 3.0 2.0 -- 0.15 0.1 Typ. 10 -- 4.0 -- -- 0.2 -- (*1) Max. Unit 15 mA 50 -- mW -- 1.6 V -- mW/mA -- nm 0.07 0.1 0.12 nm/C 30 -- -- -- 80 -- -- -- -- -- -- -- 500 -- -- -- -- 1 0.10 0.15 -- 10 100 10 dB nm ns ns A Note: *1. Detail of peak wavelength specification Channel No. -K605A -K240A -J885A -J540A -J205A -H885A -H570A -H260A -G965A -G675A -G390A -G120A -F850A -F590A -F340A -F095A -E855A -E620A Rank A Min. Typ. 1268 1270 1288 1290 1308 1310 1328 1330 1348 1350 1368 1370 1388 1390 1408 1410 1428 1430 1448 1450 1468 1470 1488 1490 1508 1510 1528 1530 1548 1550 1568 1570 1588 1590 1608 1610 Max. 1272 1292 1312 1332 1352 1372 1392 1412 1432 1452 1472 1492 1512 1532 1552 1572 1592 1612 Unit nm Channel No. -K605B -K240B -J885B -J540B -J205B -H885B -H570B -H260B -G965B -G675B -G390B -G120B -F850B -F590B -F340B -F095B -E855B -E620B Page 3 of 8 Rank B Min. Typ. 1267 1270 1287 1290 1307 1310 1327 1330 1347 1350 1367 1370 1387 1390 1407 1410 1427 1430 1447 1450 1467 1470 1487 1490 1507 1510 1527 1530 1547 1550 1567 1570 1587 1590 1607 1610 Max. 1273 1293 1313 1333 1353 1373 1393 1413 1433 1453 1473 1493 1513 1533 1553 1573 1593 1613 Unit nm nA pF Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: 5. Ordering information Part number SLT1440-xnnnx SLT1446-xnnnx Channel (-xnnnx) -K605A -K605B -K240A -K240B -J885A -J885B -J540A -J540B -J205A -J205B -H885A -H885B -H570A -H570B -H260A -H260B -G965A -G965B -G675A -G675B -G390A -G390B -G120A -G120B -F850A -F850B -F590A -F590B -F340A -F340B -F095A -F095B -E855A -E855B -E620A -E620B Pin assignment Type A Type C p@25C 1270nm 1290nm 1310nm 1330nm 1350nm 1370nm 1390nm 1410nm 1430nm 1450nm 1470nm 1490nm 1510nm 1530nm 1550nm 1570nm 1590nm 1610nm Number of pin 4 4 Range 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm 2nm 3nm Page 4 of 8 Pin length 13.50.5mm 13.50.5mm Status In production SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 6. Precaution (1) Radiation emitted by laser devices can be dangerous to the eyes. Avoid eye or skin exposure to direct or scattered radiation. (2) The modules should be handled in the same manner as ordinary semiconductor devices to prevent the electro-static damages. For safe keeping and carrying, the modules should be packaged with ESD proof material. To assemble the modules on PCB, the workbench, the soldering iron and the human body should be grounded. (3) Please pay special attention to the atmosphere condition because the dew on the module may cause some electrical damages. (4) Under such a strong vibration environment as in automobile, the performance and reliability are not guaranteed. 7. RoHS Compliancy On January 27, 2003, the European Parliament and the Council of the European Union issued the directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS). Member States shall ensure that, from July 1, 2006, new electrical and electronic equipment put on the market does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated diphenyl ethers (PBDE). Applications listed in the Annex are exempted. This product is compliant with RoHS 6/6 directive with exemptions "Lead in glass of cathode ray tubes, electronic components and fluorescent tubes" and "Lead as an alloying element in steel containing up to 0.35 % lead by weight, aluminium containing up to 0.4 % lead by weight and as a copper alloy containing up to 4 % lead by weight". Page 5 of 8 1.20.1 (1.25) 71 7.51 4.00.1 Focal Point 3.750.1 Code A B Wavelength range 2nm 3nm Pin No. Pin function for typeC (CASE) LD cathode PD anode LD anode/PD cathode 1 2 3 4 13.50.5 (5.2) (Customize code) P.C.D.2.00.15 Code Pin assignment Pin length (L1) 0 Type A 13.50.5 6 Type C 13.50.5 Channel Wavelength @25deg. 1270nm 1290nm 1310nm 1330nm 1350nm 1370nm 1390nm 1410nm 1430nm 1450nm 1470nm 1490nm 1510nm 1530nm 1550nm 1570nm 1590nm 1610nm Page 6 of 8 -K605 -K240 -J885 -J540 -J205 -H885 -H570 -H260 -G965 -G675 -G390 -G120 -F850 -F590 -F340 -F095 -E855 -E620 4 2 Pin No. Pin function for typeA LD anode (CASE) LD cathode PD cathode PD anode 1 2 3 4 3 Pin Assignment 1 Unit: mm 4-0.450.03 Appendix 4.30.1 Part No.: SLT144 / - 5.60.1 SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Part No.: Document No.: Data of issue: Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: 8. For More Information U.S.A. ExceLight Communications Inc. 4021 Stirrup Creek Drive, Suite 200, Durham NC, 27703 U.S.A. Tel. (919) 361-1600 Fax. (919) 361-1619 E-mail: info@excelight.com URL: http://www.excelight.com Europe Sumitomo Electric Europe Ltd. 220 Centennial Park, Centennial Avenue, Elstree, Herts, WD6 3SL United Kingdom Tel. (020) 8953-8118 Fax. (020) 8207-5950 URL: http://www.sumielectric.com Japan Sumitomo Electric Industries, Ltd. (Opto-electronic Products Sales Dept.) 3-12, Moto-Akasaka 1-chome, Minato-ku Tokyo, 107-8468 Japan Tel. (03) 3423-5031 Fax. (03) 3423-5247 E-mail: product_info@ppd.sei.co.jp URL: http://www.sei.co.jp/Electro-optic/index_e.html Page 7 of 8 SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Revision Record Document No. Date of issue Description HUW0224035-01A Jul./03/02 Initial issue. HUW0224035-01B Aug./01/02 Added the spec of ; Revised tr from max.: 0.25ns to max.: 0.10ns; Revised tf from max.: 0.30ns to max.: 0.15ns. HUW0224035-01C Jan./09/03 Added channels of 1270nm, 1290nm, 1310nm, 1330nm, 1350nm, 1370nm, 1430nm and 1450nm. Revised wavelength temperature coefficiency from 0.08 nm/C to 0.07nm/C. HUW0224035-01D Mar./14/03 Added channels of 1390nm and 1410nm. HUW0224035-01E Oct./13/04 Changed typical value of focal distance from 7.0 to 7.5 mm. HUW0224035-01F Incorporated by Checked by Y. Yamasaki T. Nakanishi Y. Yamasaki N. Kushida T. Kounosu H. Koseki M. Yoshimura Y. Yamasaki H. Koseki M. Yoshimura H.Kobayashi Y.Yamasaki M.Yoshimura N. Fukushima H. Michikoshi May/09/08 Added RoHS compliancy. H.Kobayashi Changed status of short wavelength side devices in section 5 from preliminary to in production. Page 8 of 8 Approved by M. Yoshimura M. Yoshimura