The documentation and process INCH~POUND conversion measures necessary to compiy with this revision shall be completed by 30 January 1995 Lod MIL-S-19500/427E 31 August 1994 SUPERSEDING MIL~S-19500/427D 30 September 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1NS614, 1NS616, 1N5S618, 1N5620, 1N5622, INS614UL, TNS616UL, 1NS618UL, 1NS6Z0UL, 1NS622UL, 1N5614US, 1NS616US, 1NS618US, 1NS620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. Two levels of product assurance are provided each unencapsulated device type. 1.2 Physical dimensions. See figures 1, 2, 3 (D-5A), 4, and 5 (JANHC and JANKC). 1.3 Maximum ratings. | rT TT Tt I I o FSM | | | | | { IT, = +700C | Raut | | Ne haw Lick tgs he owen | Roe Ly Types v Vv T Ta t T Tg an Ty mA dc 4/ R RW = +55c|= +400 | s t, = 8.3 ms | 2s | ay P | | | | Vide |V (pk) Ade mA de | Ls 2C A_(pk) | 1N5614, UL,US 200 200 1 750 2 |-65 to +175 30 See 1N5616, 5/ UL,US | 400 400 1 750 2 |-65 to +175 30 figure 1N5618, S/ UL,US | 600 600 1 750 2 |-65 to +175 30 6 | 4N5620, 5/ UL,US | 800 800 1 750 2 |-65 to +175 30 | [15622 5/ uL,us |1,000 | 1,000 1 750 2 |-65 to +175 30 | From 1 A at Ty = +55C, to 0.75 A de at T, = +100C, derate linearly at 5.56 ma/C. 2/ For the 1 A rating at the +55C and the 750 mA rating at +100C, no special mounting, heat sinking, or forced air flow across exposed areas of the device is required. / From 0.75 A at Ty, = +100C, to 0 A de at T, = +175C, derate linearly at 10 ma/C. Raji = 38C/W at L = .375 inch (9.53 mm) for UL and US suffix type devices, R,j-- = 7.0C/W. Barometric pressure reduced: 1N5616 and 1N5618 = & mm Hg, 1N5620 and 1NS622 = 5S mm Hg (not for UL and US suffix type devices). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Research Laboratory, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ, 07703-5601 by using the Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. MB 0000125 0035882 TOoMIL-S-19500/427E 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification For. STANDARDS MILITARY MIL-STD-750 - Test Method for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Rabbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions shall be as specified in MIL-S-19500 and herein. O.U.T. ---- Device under test. JANK ---- High reliability product assurance level for unencapsulated devices. JANK ---- Space reliability product assurance level for unencapsulated devices. Tee --- - Temperature of end-caps (mounting pads for US suffix devices). us - --- Unleaded or surface mounted diodes (square end-caps). UL - --- Unleaded or surface mounted diodes (square end-caps). 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500, and on figures 1, 2, 3, 4, and 5 herein. Except for JANHC and JANKC, all devices shall be metallurgically bonded-thermal ly-matched-noncavity-double plug construction, utilizing a category I bond, in accordance with MIL-S-19500. UL and US version devices shall be structurally identical to the nonsurface mount version devices except for leaded configuration. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-S-19500, and as specified herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-S-19500. 3.4.1 Marking of UL and US version devices. For UL and US version devices only, all marking (except as stated in 3.5) may be omitted from the bedy, but shall be retained on the initial container. Mm 00001e5 0935443 945MIL-S-19500/427E {pr oe NOTES; run = | | | | | | | | | | | Symbol | Dimensions | Notes | Inches Millimeters Min Max Min Max $B 10.065 {0.110 | 1.65 | 2.79 | 3 go {o.026 {0.033 | 0.66 | 0.84 G {0.130 {0.225 | 3.30 | 5.72 | 4 L {1.00 I 30 125.4 33.02 Dimensions are in inches. Metric equivalents are given for general information only. Dimension @& shalt be measured at the largest diameter, The G dimension shall include all uncontrolled areas of the device. = | GB FIGURE 1. Physical dimensions (for non-UL and non-US suffix devices only). ME 0000125 00355684 4&6]MIL~S-19500/427E an A ae ~ Bs C - {) ae qT o- cr >a=5 /7 \\ D {f 1 | vA i] \\ // NIEZ7 | .020 R MAX TYP | syabot | Dimensions | Notes | Inches Millimeters | | | Min | Max Min Max | | | A | .168 | .225 | 4.27 | 5.72 | | 8 | -019 | .028 | 0.48 | 0.71 | | .003 | --- ! Q.08 | --- | | 0 .091 | 125 | 2.31 | 3.18 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions types INS614UL, INS616UL, 1N5618UL, INS620UL, and IN5622UL (surface mount devices). M@ 0000125 0035485 718MIL-S-19500/427E _ a-o~ 7 ~ ff \ D -020 R MAX TYP | | | | [Symbol | Dimensions | Notes | | | | | ]__ Inches Millimeters | | | | | | | | | | | Min | Max | Min | Max | | | | | | | | | |__A 168 | .200 | 4.27 | 5.08 | | | | | | | | B 019 [| .028 | 0.48 | 0.71 | | | | | | | | |__ 003 | ---- | 0.08 | --~- | | | | | | D 091 | .103 | 2.31 | 2.62 | l NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 3. Physical dimensions types 1N5614US, IN5616US, 1N5618US, INS62QUS, and 1N5622US (surface mount devices). Mi 0000125 0035866 654MIL-S-19500/427E A - version NOTES: 14. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The physical characteristics of the die are: Top metal: Gold 10,000 A minimum. Back metal: Gold 4,000 A minimum. FIGURE 4. Physical dimension, JANHCA AND JANKCA die. Me 0000125 0035887 S50MIL-S-19500/427E LLL, SS SSH VS SS LLL LLL ANODE AL THICKNESS 45,000 A MINIMUM L CATHODE AU THICKNESS 2500 A wintnun B - version | Ltr Dimensions | | Inches Millimeters | | Min Max Min Max | | A -039 | .043 | 1.00 | 1.09 | | BL C027 [| .025 | 0.53 | 0.64 | | C 008 | .012 | 0.20 | 0.31 | NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The physical characteristics of the die are: Top metal: Aluminum (anode) ....... 45,000 A minimum. Back metal: Gold (cathode)... . 2... 2,500 A minimum. FIGURE 5. Physical dimension, JANHCB AND JANKCB die. M co00ieS 0035868 4o?MIL-S-19500/427E 3.5 Polarity. The polarity of ail types shall be indicated with a contrasting color band to denote the cathode end. Alternatively, for UL and US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode end or a contrasting colorband may be used. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S~-19500. 4.2.1 JANHC and JANKC devices. Qualification for die shall be in accordance with appendix H of MIL~S-19500. 4.3 Screening (JANS, JANTX, and JANTXV Levels). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the Limits of table I herein shall not be acceptable. Screen (see Measurement table II of MIL-S-19500) JANS level JANTX and JANTXV Levels V Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 To4 and Ve Not applicable | 11 [Inq and V~, Alg, = 100 percent of lIp4 and V, | | {initial reading or #100 nA dc, | | jwhichever is greater. dy, = +0.1 Vide. 12 See 4.3.1 See 4.3.1 13 2/ |Subgroups 2 and 3 of table I Subgroup 2 of table I herein: | fherein: Al 4 = 100 percent of Alp, = 100 percent of initial reading | {initial reading or #100 nA de, or +100 nA dc, whichever is greater. | Jwhichever is greater. AV, = 20.1 V dc. Scope display | |AV, 3 20.1 V de. Scope display jevaluation (see 6.5.3). | | [evaluation (see 4.5.3). | | 1/ Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-S-19500, screen 3 prior to this thermal test. a/ Zoux need not be repeated at step 13 if performed earlier in the ecreening sequence. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038, condition B of MIL-STD-750, T, = room ambient as designated in 4.5 of MIL-STD-750, Va = full rated V, (see 1.3); f = 50-60 Hz, I, = 1.0 A de minimum, Te, = +100C to +125C for surface mount devices (UL and US version) (see 4.5.7). 4.3.2 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-S-19500, appendix H. 4.3.3 Thermal impedance Zo)y measurements for screening. The Zojx measurements shall be performed in accordance with MIL-STD-750, method 3101. Maximum Limit = 4.5C/W. mM 0000125 0035489 3b3MIL-S-19500/427E 4.3.3.1 Thermal impedance (Zojy measurements) for initial qualification or requalification. The Z, jy measurements shall be performed in accordance with MIL-STD-750, method 3101 (read and record value Zesx? and shall be supplied to the qualifying activity on a 500 piece sample from the qualification lot prior to qualification approval. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table I herein. The following test conditions shall be used for Zax in a group A, subgroup 2 inspection: a. I, measuring current - - - ----- ~~ 10 mA. b. 1, forward heating current - - - - - - - 10 A. c. t, heating time ------------ 10 ms. d. typ measurement delay time ~~ - - - - - 100 Us maximum. The maximum Limit for zy Xx in group A, subgroup 2 is Tax (maximum) = 4.5C/W. J 4.4.2 Group B inspection. Group 8 inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVa (JANS) and table IVb (JANTX and JANTXV) of MIL-S-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table 1, group A, subgroup 2 and as specified in table II herein. Z55X shall be performed after JANS group B4 only. See subgroup conditions for delta Limits when applicable. Leaded samples may be used in lieu of surface mount devices (UL and US version) for Life tests. 4.4.2.1 Group 8 inspection, table IVa (JANS) of MIL-S-19500. Subgroup Method Conditions B3 4066 Tegy = 30 A (pk); 10 surges of 8.3 ms each at 1 minute intervals, super- imposed on I, = 750 mA dc; Vaum 7 Pated Voy (see 1.3); Ty = +100C. B4 1037 I, = 1 A dc minimum; T, = room ambient as defined in the general requirement o MIL-STD-750 (see 4.5); f = 50-60 Hz; Va = rated Vawe (see 1.3); ton = tote = 3 minutes minimum, 2,000 cycles. B5 1027 Ip = 1 A de minimum; V, = rated Vewn (see 1.3); T, = +150C minimum, adjust I, and T, as required to give an average T, = +275C +0, -35C (see 4.5.7). B6 3101 #25C S T= +35C (recorded before test is performed); Rode Cmax imum) or S 38C/W; L = .375 inch (9.53 mm) (see figure 6). For surface mount devices 4081 (UL and US version), R = 7C/W. e@JEC 87 --- Peak reverse power, see 4.5.4 and figure 7 herein. Pou = 500 W. Test shall be performed on each sublot; sampling plan = 10, end-points, see 4.4.2. MM! 0000125 0035890 045MIL~S~19500/427E 4.4.2.2 Group B inspection, table [Vb (JANTX and JANTXV) of MIL-S-19500. Subgroup Method Conditions B2 4066 I = 30 A (pk); 10 surges of 8.3 ms each at 1 minute intervals, super- imposed on Ig = 750 mA dc; V, = rated Voy (see 1.3); Ty = +100C. room ambient as defined in the generat requirement of MIL-STD-750 (see B3 1027 T, 7 ah 3); Ig = 1 Ade minimum; f = 50-60 Hz; V, = rated Vay (see 1. 3, 4.5.7, and 4.5.7.1). BS 3101 +25C = tT, = +35C (recorded before test is performed); R L (max imum) or = 38C/W; L = .375 inch (9.53 mm) (see figure 6). For surface mount devices 4081 (UL and US version), R = 7C/M. @JEC B7 --- Peak reverse power, see 4.5.4 and figure 7 herein. Ppy = 500 W. Test shall be performed on each sublot; sampling plan = 10, end-points, see 4.4.2. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500 and as follows. Electrical measurements Cend-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 and as specified in table II herein. need not be performed. See subgroup conditions for delta Limits when applicable. Leaded samples may pax used in Lieu of surface mount devices (UL and US version) for Life tests. 4.4.3.1 Group C inspection, table V of MIL-S-19500. Subgroup Method Conditions c2 2036 Tension: Test condition A, weight = 12 pounds. Lead fatigue: Test condition , weight = 1 pound. NOTE: Both tension and lead fatigue are not applicable for surface mount devices (UL and US version). C6 1026 T, = room ambient as defined in the general requirement of MIL-STD-750 (see 4.5); Ig = 1 Ade minimum; f = 50-60 Hz; V) = rated Voy (see 1.3, 4.5.7, and 4.5.7.1). 4.4.4 Group inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-S-19500. 4.4.4.1 Group E inspection, table VII of MIL-S-19500. Subgroups E1 through E4 is not applicable. Subgroup Method Conditions eS 1001 1N5616, 1N5618 = 8 mm Hg (100,000 ft); 1N5620, 1NS622 = 33 mm Hg (70,000 ft); Ve = Vewm (see 1.3); t = 1 minute (minimum). 4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables and as follows, 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL~STD-750. 4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at an ambient temperature (T,) of +25C 3C. 4.5.3 Scope display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 5 to 20 LiA/division and 50 to 200 V/division. Reverse current over the knee shall be at least 50 uA. Each device may exhibit a sharp knee characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. 10 Me o0001e5 00354691 TllMIL-S-19500/427E 4.5.4 Peak reverse power test. This test shall be measured in the circuit of figure 7, or equivalent. A 20 microsecond half-sine waveform of current shall be used and peak reverse power shall be determined by the product of peak reverse voltage and peak reverse current. 4.5.6 Thermal resistance. Thermal resistance measurement shall be performed in accordance with MIL-STD-750, method 3101 or 4081. Forced moving air or draft shall not be permitted across the device during test. The maximum Limit for R,,, under these test conditions shall be ResL(max) = 38C/W at .375 inch (9.53 mm) and 7C/W at O inch corso mm) . 4.5.7 Life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 nor less than 150. 4.5.7.1 Mounting conditions. At the option of the manufacturer, any clips or heat sink mounting configurations may be utilized provided that I. is adjusted such that the junction temperature of each diode is maintained at least +120C above the specified ambient temperature of +25C. 1 Mi 0000125 00354852 953MIL-S-19500/427E TABLE I. Group A inspection. Unit a Inspection MIL-STD-750 Symbol Limit Method Conditions Min Max Subgroup 1 Visual and mechanical | 2071 inspection Subgroup 2 Forward voltage | 4011 |[I, = 3A de, pulsed (see 4.5.1) Ive |] 0.8 {1.3 | V de t_ = 300 us, 2 percent maximum dUty cycle Reverse current 4016 [DC method; V, = rated V I 0.5 [pA de R R R1 leakage (see 1.3) Breakdown voltage 4021 Ip = 50 HA de Vopror 1N5S614, UL,US 220 1N5616, UL,US 440 1N5618, UL,US 660 1N5620, UL,US 880 4N5622, UL,US 1100 de de de <<a << de Thermal impedance 3101 |See 4.4.1 Zz 4.5 |C/W Subgroup 3 High temperature T, = +100C operation aJX Reverse current 4016 DC method; V, = rated V I 25 =|pA de R R R2 leakage (see 1.3) Subgroup 4 Reverse recovery time | 4031 Condition 81. t 2 Us Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, see MIL-S-19500. 12 me 0000325 0035893 454 m=TABLE II. Groups A, 8, MIL-S~19500/427E and C electrical measurements. 1/ 2/ 3/ Step Inspection Method MIL- $Td-750 Limits Symbol Conditions Unit current change L | | |Forward voltage change 4011 [I, = | Pulsed (see 4.5.1) | | | The electrical measurements for table a. Subgroup 3, see table II herein, b. Subgroup 4, see table II herein, c. Subgroup 5, see table II herein, The electrical measurements for table a. Subgroup 3, see table II herein, b. Subgroup 6, see table Il herein, The electrical measurements for table a. Subgroup 2, see table II herein, b. Subgroup 6, see table Il herein, Reverse leakage 4016 [DC method | Min | Max | | Alp, 4/ | |For JANTX and | | JANTXV, = 250 | |nA de or 100 | |percent, { |whichever is | Igreater; for | |JANS, = 100 | [nA de or 100 | |percent, | [whichever is | |greater. 3 A de; | {+50 mv de | |maximum change | |from previous | |measured value. IVa (JANS) of MIL-S-19500 are as follows: | ! | | | | | | | | | | | | | | Wey 4/ | | step 2. step 2. steps 7 and 2. IVb (JANTX and JANTXV) of MIL-S-19500 are as follows: step 1. step 1. V of MIL-S-19500 are as follows: steps 1 and 2 (JANS). steps 7 and 2 (JANS), step 1 (JANTX and JANTXV). Devices which exceed the group A Limits for this test shall not be accepted. MM o0001e5 0035654 720 13MIL-S-19500/427E MAXIMUM POHER DISSIPATION IN WATTS 26 50 75 100 125 150 175 Maximum lead temperature in C CT, at point d from body (see table below)). For maximum operating junction temperature of +175 with equal two-Lead conditions. | | d R | (see notes 1 and 2) est | | | Dimensions C/W | | 0.000 (0.00 mm) 7 | 0.125 (3.18 mm) 18 | 0.250 (6.35 mm) 29 | 0.375 (9.53 mm) 38 | 0.50 (12.7 mm) 45 | 0.75 (19.1 mm) 62 | 1.00 (25.4 mm) 76 | I 1. Lead distance point d and thermal resistance data. 2. Thermal resistance test performed at .375 inches (9.53 mm). 3. For US suffix devices: Royec = 7-0C/W. FIGURE 6. Power derating curves maximum power in watts versus lead temperature. 14 M@ 0000125 0035495 bb?MIL-S-19500/427E R L cvrerwn 2N4200 . 3902 vi c PULSE = GEN our fy 20:1 FERRITE QNE TURN PICK UP Loop NOTES: 4. L = 13T #22 pm 1 inch (25.4 mm) diameter form (air core). 2. C - 1 to 10 ufd to give 20 pis pulse width. 3. V - adjustable to 200 volts for power desired in D.U.T. | 20 As Lo TYPICAL WAVE FORMS FIGURE 7. Peak reverse power measurement circuit and waveforms. M@ 00001eS 0035456 STIMIL-S-19500/427E S. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory). 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish as applicable (see 3.3.1). . Product assurance Level, type designator, and for die acquisition the JANHC and JANKC identification (see 6.4 and figures 4 and 5). 6.3 Supersession data. The following MIL-S-19500/427 types supersede MIL-$-19500/365 types: MIL-S-19500/427 devices MIL-S~19500/365 devices IN5614 1N4383 IN5616 1N4384 1N5618 1N4385 14N5620 1N4585 4N5622 1N4586 6.4 Suppliers of die. The qualified die suppliers with the applicable letter version (e.g., JANHCAINS614) will be identified on the Qualified Products List (QPL). 6.5 Changes from previous issue. JANHC and JANKC ordering information PIN Manufacturer 14552 33178 INS614 JANHCA1N5614 JANHCB1NS614 JANKCAINS614 JANKCB1IN5614 1N5616 JANHCA1NS616 JANHCB1N5614 JANKCA1NS616 JANKCBINS614 1N5618 JANHCA1NS618 JANHCB1N5614 JANKCAI1NS618 JANKCBINS614 1N5620 JANHCA1N5620 JANHCBIN5614 JANKCA1N5620 JANKCBINS6146 1N5622 JANHCAINS622 JANHCBINSO14 JANKCATNS622 JANKCBINS614 mm ooo0beS 0035897? 43T 16 Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes.Custodians: Army - ER Navy - EC Air Force - 17 NASA - NA Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 19, 85, 99 OLA - ES ME 0000125 0035898 376 mm MIL-S=19500/427E CONCLUDING MATERIAL Preparing activity: Army ~ ER Agent: OLA - ES (Project 5961-1609) 7?