IXTY08N100D2 - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSX TJ= 25°C to 150°C 1000 V

VGSX Continuous ±20 V

VGSM Transient ±30 V

PDTC= 25°C60W

TJ- 55 ... +150 °C

TJM 150 °C

Tstg - 55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-252 0.35 g

TO-263 2.50 g

TO-220 3.00 g

DS100182A(12/09)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSX VGS = - 5V, ID = 25μA 1000 V

VGS(off) VDS = 25V, ID = 25μA - 2.0 - 4.0 V

IGSX VGS = ±20V, VDS = 0V ±50 nA

IDSX(off) VDS = VDSX, VGS= - 5V 1 μA

TJ = 125°C 15 μA

RDS(on) VGS = 0V, ID = 400mA, Note 1 21 Ω

ID(on) VGS = 0V, VDS = 50V, Note 1 800 mA

Depletion Mode

MOSFET

N-Channel

IXTY08N100D2

IXTA08N100D2

IXTP08N100D2

VDSX = 1000V

ID(on) > 800mA

RDS(on) ≤≤

≤≤

≤ 21ΩΩ

ΩΩ

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL 94 V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

G = Gate D = Drain

S = Source Tab = Drain

TO-252 (IXTY)

TO-263 AA (IXTA)

GDS

TO-220AB (IXTP)

D (Tab)

Preliminary Technical Information

IXTY08N100D2 IXTA08N100D2

IXTP08N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 30V, ID = 400mA, Note 1 330 560 mS

Ciss 325 pF

Coss VGS = -10V, VDS = 25V, f = 1MHz 24 pF

Crss 6.5 pF

td(on) 28 ns

tr 57 ns

td(off) 34 ns

tf 48 ns

Qg(on) 14.6 nC

Qgs VGS = 5V, VDS = 500V, ID = 400mA 1.2 nC

Qgd 8.3 nC

RthJC 2.08 °C/W

RthCS TO-220 0.50 °C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA VDS = 800V, ID = 45mA, TC = 75°C, Tp = 5s 36 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VSD IF = 800mA, VGS = -10V, Note 1 0.8 1.3 V

trr 1.03 μs

IRM 7.40 A

QRM 3.80 μC

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

VGS = ±5V, VDS = 500V, ID = 400mA

RG = 10Ω (External)

IF = 800mA, -di/dt = 100A/μs

VR = 100V, VGS = -10V

TO-263 (IXTA) Outline

1. Gate

2. Drain

3. Source

4. Drain

Bottom Side

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

TO-252 AA (IXTY) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 2.19 2.38 0.086 0.094

A1 0.89 1.14 0.035 0.045

A2 0 0.13 0 0.005

b 0.64 0.89 0.025 0.035

b1 0.76 1.14 0.030 0.045

b2 5.21 5.46 0.205 0.215

c 0.46 0.58 0.018 0.023

c1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.32 5.21 0.170 0.205

E 6.35 6.73 0.250 0.265

E1 4.32 5.21 0.170 0.205

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.40 10.42 0.370 0.410

L 0.51 1.02 0.020 0.040

L1 0.64 1.02 0.025 0.040

L2 0.89 1.27 0.035 0.050

L3 2.54 2.92 0.100 0.115

1. Gate

2. Drain

3. Source

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXTY08N100D2 IXTA08N100D2

IXTP08N100D2

Fi g . 1. Ou tput C h aracteri st i cs @ T

= 25ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

02468101214

- Volts

- Amperes

= 5V

-2V

-1V

Fi g . 2. Exten d ed Outp ut Character i stics @ T

= 25ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0 1020304050607080

- Volts

- Amperes

= 5V

-2V

-1V

Fi g . 3. Ou tp u t C h ar a cter i sti cs @ T

= 125ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 5 10 15 20 25 30

- Volts

- Amperes

= 5V

-1V

-2V

-3V

Fig. 4. Drain Current @ T

= 25ºC

1E-08

1E-07

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

- Volts

- Amperes

= - 3.00V

- 3.25V

- 3.50V

- 3.75V

- 4.50V

- 4.00V

- 4.25V

Fi g . 6. D yn ami c R esi stance vs. Gat e Vo l tage

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

-4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8

- Volts

- Ohms

∆

= 700V - 100V

= 25ºC

= 100ºC

Fig. 5. Drain Current @ T

= 100ºC

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

- Volts

- Amperes

= -3.25V

-3.50V

-3.75V

-4.00V

-4.25V

-4.50V

IXTY08N100D2 IXTA08N100D2

IXTP08N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized R

DS(on)

vs. Junction Tem perature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

RDS(on) - Normalized

= 0V

= 0.4A

Fig. 8. R

DS(on)

Normalized to I

= 0.4A Valu e

vs. D rain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID - Amperes

RDS(on) - Normalized

= 0V

- - - -

= 125ºC

= 25ºC

Fi g . 9. In put Ad mi ttan ce

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5

VGS - Volts

ID - Amperes

= 125ºC

25ºC

- 40ºC

= 30V

Fig. 10. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID - Amperes

f s

- Siemens

= - 40ºC

= 30V

25ºC

125ºC

Fig. 12. Forward Voltage Drop of Intrinsic Diode

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

0.4 0.5 0.6 0.7 0.8 0.9

VSD - Volts

IS - Amperes

= 125ºC

= -10V

= 25ºC

Fi g. 1 1. B r ea kd o wn an d Th r eshol d Voltag es

vs. Ju n cti o n T e mper a tur e

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

BV / VGS(off) - Normalized

GS(off)

@ V

= 25V

DSX

@ V

= - 5V

IXTY08N100D2 IXTA08N100D2

IXTP08N100D2

Fi g . 17 . Maxi mu m Transi en t Thermal I mp ed a n ce

0.1

1.0

10.0

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

(th)JC

- ºC / W

Fi g . 14. Gate C h ar ge

-5

-4

-3

-2

-1

0 2 4 6 8 10 12 14 16

- NanoCoulombs

- Volts

= 500V

= 400mA

= 1mA

Fig. 13. Capacitance

100

1,000

0 5 10 15 20 25 30 35 40

- Volts

Capacitance - PicoFarads

= 1 MHz

Ciss

Crss

Coss

Fi g . 15. F orwar d -B i as Safe Op er ati n g Area

@ T

= 25ºC

0.01

0.10

1.00

10.00

10 100 1,000

- Volts

- Amperes

= 150ºC

= 25ºC

Single Pulse

1ms

100µs

DS(on)

Limit

10ms

100ms

25µs

Fi g . 16. F o r war d -B i as Safe Op e r ati n g Area

@ T

= 75ºC

0.01

0.10

1.00

10.00

10 100 1,000

- Volts

- Amperes

= 150ºC

= 75ºC

Single Pulse

1ms

100µs

DS(on)

Limit

10ms

100ms

25µs