Total Pages Page 17 1 Code No.: |C3F4738 Product Standards Part No. ~ AN8015SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by KKemtehi |W. Aeraamaloe f Place, 2 Moritz K.Komichi M.Hiramatsu J.Hara J.Morita 2006-08-24 Established Revised 210801500106070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH P rod u ct Sta n d a rd S Total Pages Page 17 2 Contents | ON =) t=) 3 ME FEAtUreS oe cee cee eee ee nee eee ee ee EE ne EEE EEE EEE EEE EEE DACRE REDO DDE tenet tae tee eae ead e eC nee nea anes 3 | No) 6) (6r= 1 (0) (oe 3 WE Package ooo. EEE DEE EE DEE DEE DETTE EDEL EE SESE aa eae eee eee ee ee nee ees 3 MTS eee ec ce cee te cee SV RRTERNOTANT fel FTL FATT LS ole ST le STE Sl SEE STE > STE EE i SEIEETEESEETSSESRIS]: SSE + EG + SEE +S 3 Hl Application Circuit Example 22.00... ce nee Een Ene cen e ene DEED EE Cee Eee ee pee nee eee ened 4 |S) fore; al B) =.) t=) 1) 5 BE Pin DeSCTIPtIONS 20... ccc cece EEE ECE CEES eee ete ten naw ena enn ages 6 M Absolute Maximum Ratings ........2.c.ccccccccceeesseceesseceseaeesseeceaues cesses coeecseecnseeceseseesnececsuresnaeetaes 7 M Operating Supply Voltage Range ............cceccccec eee eee eee cette ne cnn ere e ee teen ee beeen t ae ca nnn ae neg sansa eee eaeee 7 Mi Recommended Operating Conditions ...............cce ccc cee cee eee eee ee ee enn ete Cee ne see cee eee nen ene eee taeanes 7 @ Electrical Characteristics .............0........ ee EEE EEE EEE EE EEE EEE EEE EEE EEE On enE tnes 8 @ Electrical Characteristics (Reference values for deSiQN) ... 0... eect tence ee ee etree eee een ene te eee eee eae neeeee 9 MI Test Circuit Diagram ......... cece ccc cece cence eee rennet cen need e enue naa an ean eee terns nee cnn Ene eed wud eee geen neg e ype aee 10 Hi Electrical Characteristics Test Procedures ......... 22. ...cec cee ccn eee eee cen ene crete ee tee tea eee een seen e cee ean teeaen ene naas 13 Bi Technical Data ssvicsessncdsirsnuccerisnisrmcscancnieaeceetieleanacaarie in aiasateus aes eemartanmeeaaannensle 16 MB Usage Notes ooo... e eer ene EEE EEE EEE EEE EE DESEO EEG See eee cee e en teen eee dae eaes 17 2006-08-24 Established Revised 2.10801500206070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 3 AN8015SH Single-channel step-down, step-up, or inverting use DC-DC converter control IC BM Overview AN8015SH is a single-channel DC-DC converter control IC using the PWM method. This IC can provide any one output type from among step-down, step-up and inverting output. Its operating supply voltage range is wide and its consumption current is small. In addition, since it uses the 10-pin surface mounting type package with 0.5 mm pitch, it is suitable for highly efficient miniature potable power supply, especially for a negative output power supply. lf Features Wide operating supply voltage range (3.6 V to 34 V) Small consumption current (1.8 mA typical) Converter control in a wide output frequency range is possible (2 kHz to 500 kHz). Built-in timer latch short-circuit protection circuit (charge current : 1.1 LA typical) Incorporating the under-voltage lock-out (U.V.L.O) circuit Incorporating a high precision reference voltage circuit (2.46 V (allowance: +3%)) e Output block is open-collector (darlington) type. High absolute maximum rating of output current (100 mA) Maximum duty ratio is fixed and has small sample-to-sample variations (90% +5%) Applications LCD displays, digital still cameras, and PDAs Mi Package 10 pin Plastic Shrink Small Outline Package (SSOP Type) Mi Type Silicon Monolithic Bipolar IC 2006-08-24 Established Revised 210801500306070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Product Standards Total Pages Page 17 4 i Application Circuit Example 1. Chopper method step-down type Vee 120 kQ P AAA vay ; 1 000 pF O.1 WF Vo if T LOO" o5V 3.6 kQ 8.2kQ id PS | 4.5kQ | 10 9 8 7 | 6 FB IN- IN+ VpF Vee CT RT S.C.P GND OUT 1 2 3 | 4 5 =200pF S15kQ 7m LF vr 2. Chopper method inverting type Vec 130 kQ WW 120 kQ 0.1 uF Vo NNN I bq Y 24 V a oo | 10 9 8 7 6 FB IN- IN+ Vrer Vec CT RT S.C.P GND OUT 1 2 | 3 | 4 5 = 200 pF 15kQ ] 0.1 pF wT 2006-08-24 Established Revised 210801500406070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Product Standards Total Pages Page 17 5 i Block Diagram tf kK WWE Veo Vrre CT) RT 6 7 | 2 0.5 V Reference 2.46 V43% Triangular supply | wave OSC 1.20 V- NW OUT 1 1 INt]8 Env Am | scp Comp y GND In-[9 | : | FB | 10 > Ls LATCH wut} | Clamp -- f 3 S.C.P 2006-08-24 Established Revised 210801500506070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 6 Pin Descriptions Pin No. Pin name Type Description 1 CT Pin for connecting oscillator timing capacitor RT Pin for connecting oscillator timing resistor S.C.P Pin for connection the time constant setting capacitor for short-circuit protection GND Ground Grounding pin OUT Output Open collector type output pin Power supply | Power supply voltage application pin ololalalujalwl]lr < 3 a VREF Output Reference voltage output pin IN+ Input Error amplifier non-inverted input pin IN- Input Error amplifier inverted input pin 10 FB Output Output pin of error amplifier 2006-08-24 Established Revised 210801500606070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 7 Hi Absolute Maximum Ratings NS Parameter Symbol . Rating Unit Notes Z % I | Supply voltage Vec 35 Vv *] 2 | Supply current Tec mA 3 | Power dissipation Pp : 115 mW 2 4 | Operating ambient temperature Tope 30 to +85 C 7 8 5 | Storage temperature Typ 55 to +150 C *3 6 | INpin allowable application voltage Vin- 0.3 to Var Vv 7 | IN+ pin allowable application voltage Vine 0.3 to Var Vv = 8 | Output pin allowable application voltage Vour 35 Vv 9 | Collector output current Jour : 100 mA = Notes) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *2 : The power dissipation shown is the value at T, = 85C for the independent (unmounted) IC package. When using this IC, refer to the P,-T, diagram of the package standard page 4 and use under the condition not exceeding the allowable value. *3 : Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for T, = 25C. Hi Operating supply voltage range Parameter Symbol Range Unit Notes Supply voltage range Vec 3.6 to 34 v * Note) *: The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. Hi Recommended Operating Conditions Parameter Symbol Min Max Unit Notes Error amplifier input voltage Vin 0.1 0.8 v si Collector output voltage Vout - = 34 Vv Collector output current lour _ 50 mA a Timing capacitance Cy 100 27 000 pF * Timing resistance Ry 5.6 15 kQ oa Oscillation frequency - four 2 500 kHz % Reference voltage output current lREF -3 0 mA 4 shot Hatt proteett capacitance for soft start Coop 1.000 _ pF & Note) *: Do not apply current or voltage from external source to any pin not listed above. In the circuit current, (+) means the current flowing into IC and () means the current flowing out of IC. 2006-08-24 Established Revised 210801500706070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 8 @ Electrical Characteristics at V.. = 12 V, Rp = 15 kQ, C; = 200 pF Note) T, =25C+2C unless otherwise specified. fic Parameter Symbol | este Conditions a ame Unit | Notes : in | Typ | Max Reference Voltage Block 1 | Reference voltage VREF I Igup =1 mA 2.386 | 2.46 | 2.534) V 2 | input factuation Line foe = | 5 | 20 | ae 3 | Load regulation Load L | Iper = 0.1 to-] mA 2 10 | mV U.V.L.O. Block 4 | Circuit operation start voltage Vuon 2} 2.8 3.1 3.4 Vv 5 | Hysteresis width Vuys 2 100 | 200 | 300 | mV Error Amplifier Block 6 | Input offset voltage Vio 3 _ -6 6 mV 7 | Input bias current Ip 3 500 | 25 | nA 8 | Common-mode input voltage range Vicr 3 -0.1 | 0.8 | V 9 | High-level output voltage Ven 4 ees Var |v 10 | Low-level output voltage Vet 4 0.1 0.3 Vv Output Block [1 | Oscillation frequency four 5 |Rp=15 kQ, C;=200 pF 175 195 | 215 | kHz 12 | Maximum duty ratio Dax 5 |R-=15kOQ, Cy = 200 pF 85 90 95 % 13 | Output saturation voltage Vor 5 |Ip =50 mA, Rp = 15 kQ 0.9 1.2 Vv 14 | Output leak current ThEAK 5 vec ven output _ -- 10 | pA Short-circuit Protection Circuit Block 15 | Input threshold voltage Vrupc 6 1.73 | 1.83 | 1.93 | V 16 | Input standby voltage Voerpy 6 1.15 | 1.25 | 1.35 | V 17 | Input latch voltage Vin 6 = 30 120 | mV 18 | Charge current lone 6 | Vscp= 0 V 1.32 | -1.1 |-0.88] pA Whole Device 19 | Total consumption current lec | 1 | Ry = 15 kQ | = | 1.8 | 2.8 | mA | 2006-08-24 Established Revised 210801500806070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 9 @ Electrical Characteristics (Reference values for design) at V., = 12 V, R, = 15 kQ, C, = 200 pF Note) T, =25C+2C unless otherwise specified. B Test _ Reference values N Parameter Symbol | ocuits Conditions Unit | Notes 0. Min | Typ | Max Reference Voltage Block Input regulation with _ 10 __ i 20 input fluctuation 2 Linz 1 | Voc = 3.6 V to 20 V = Illimaxd mV 1 Output voltage temperature _ _ : 21 characteristics 1 View 1 | Ta=-30 to 25C +0.5 | % ] Output voltage temperature _ 3 _ _ * 22 characteristics 2 Vic2 1 | Ta=25 to 85C +0.5 % 1 23 | Reference short-circuit current Irs ] oo | -20 | mA | *1 Error Amplifier Block 24 | Output sink current Ign 4 | Veg = 0.8 V i 8 os mA | *1 25 | Output source current Tsource 4 | Vip =0.8 V |-120} pA | *1 26 | Open-loop gain Ay 4 70 dB | *l 27 | Common-mode ripple rejection ratio | CMRR 3 = 50 _ dB | *1 Output Block 28 | RT pin voltage Ver 5 = _ 0.5 _ Vv *] 29 | Maximum oscillation frequency fourawax) 5S | Ry_=5.6kQ, Cy = 150 pF 500 | kHz} *1 Frequency supply voltage four = 200 kHz, _ _ * 39 | characteristics fay > | Woe=3.6 V to 34V a i Frequency temperature foyr = 200 kHz , _ _ 31 | characteristics 1 furl > | Ta=-30 to 25C 4 s | Frequency temperature four = 200 kHz , _ _ " 32 | characteristics 2 far? > |Ta=25 to 85C +8 as I Short-circuit Protection Circuit Block 33 | Comparator threshold voltage | Von | 6 | _ | _ | 1,83 | _ | Vv | *] Whole Device 34 | Total consumption current 2 | loe2 | 1 | Ry = 5.6 kQ, Cy = 150 pF | | 2.5 | | mA | *] Note) *1: The above characteristics are reference values for design of the IC and are not guaranteed by inspection. Ifa problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns, 2006-08-24 Esta blished Revised 21080 1500906070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 10 WM Test Circuit Diagram 1. Test Circuit 1 10 pF 10 9 FB IN CT RT S.C.P GND OUT 1 2 3 4 5 =e Ry 200 pF 15kQ ar 2. Test Circuit 2 Vee gt ; 10 uF |i ike Vv 10 | 9 8 7 6 FB IN- IN+ Wa Vec CT RT S.C.P GND OUT 1 2 | 3 | 4 5 Ver Ry Vsep Vo $430.2 04V 15kO | 15vV rr 2006-08-24 Established Revised 210801501006070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH P rod U ct Sta n d a rd S Total Pages Page 17 11 Hf Test Circuit Diagram (continued) 3. Test Circuit 3 Vave Veo ; 10 PF Vin) ist : tls 12V swit | 8| 10 9 7 6 FB IN- IN+ Veer Veo CT RT S.C.P GND OUT 1| 2 3 4 5 Ver =k 430.2 | 0.4V 15kQ aa 4. Test Circuit 4 4d Vp Voc b : 10 pF Vo dim Vn 1 Vins 12V ab | 0.75V SW 10 9 8 7 6 FB IN- IN+ Veer Vec CT RT S.CP GND OUT | 2 3 4 5 7 Ver Re 430.9 0.4V 1I5kQ ar 2006-08-24 Established Revised 210801501106070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH P rod u ct Sta Nn d a rd S Total Pages Page 17 12 Mi Test Circuit Diagram (continued) 5. Test Circuit 5 Veo i 10 pF Vip = RV 10 9 8 7 6 FB IN- IN+ Ver Vec CT RT S.C.P GND OUT 1 2 3 | 4 5 a 7b | i Sw2 [Oscitloseope| LEAK o\i\ Ver l Cy sR Ver ta) 6L2 43002 Wy, | [200 pF 7) 15ka vy toso ma A 34.V 6. Test Circuit 6 Ven Veo 4, 2 10 uF - 12'V 10 9 8 7 6 FB IN- IN+ Var Voc CT RT S.C.P GND OUT 1 | 2 | 3 | 4 5 ll sw aAbe Ver Ry t Vo =430Q 0.4 v I5kQ Vecp |V3 3 7 ar 2006-08-24 Established Revised 210801501206070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.Product Standards AN8015SH Total Pages Page 17 13 i Electrical Characteristics Test Procedures 1. Test Circuit1 No Parameter Conditions Measuring Method 1 | Reference voltage SW1 =a, Vcc = 12 V, Ippp =-1 mA Measure the voltage of Vpgr. Input regulation with SW1 =a, Voc = 3.6 V > 34 V, . 2 input fiTeivarion leur = 0 A Check the regulation of Vpgr. ; SW1 =a, Voc = 12 V, : 3 | Load regulation Tenp= 0.1 mA > I mA Check the regulation of Vpgp. 19 | Total consumption current SW1=c, Voc = 12 V, RT = 15 kQ Measure the current of Ic. 23 Rete e Snort Cuicuit SW1=b, Voge = 12 V Measure the current of Ips. current 2. Test Circuit2 5, Parameter Conditions Measuring Method Measure the Vcc voltage when the Vg changes from 4 | Circuit operation start voltage | Vcr = 0.4 V, Vgcp = 1.5 V, Veg = 1.5 V | High to Low level while increasing the Vc voltage gradually. Vo Vuys= Vuon~ Vuorr an 5 | Hysteresis width Vor = 0.4 V, Vecp = 1-5 V, Veg = 1.5 V L Vuore Vuon , Vea 3. Test Circuit3 x Parameter Conditions Measuring Method _ _ Measure the I, current when the Vp, changes while 6 | Input offset voltage SWI =a, Vec= 12 V, increasing the I, current gradually, calculate Vip = R x a 6 Vine= 0.75 V, Ver = 0.4 V I bine ly Bracualy, 10 9 . Common-mode input voltage _ _ _ Check the Vpp voltage when Vyy.=-- 0.1 V or 0.8 V, 8 range AMET = a5 Wager 1ATV, Mor = Oa V while changes the I, current gradually. Measure the difference of AVjg when Viy=~ 0.1 V Common-mode ripple or 0.8 V, and calculate from the following formula. 27 | Vompon-mode TPP SWI =a, Voc = 12 V, Vor = 0.4 V 09 rejection ratio CMRR = 20log)9 AVio : SW1=b, Veco = 12 V, 7 | Input bias current Vine = 0.75 V, Ver =0.4 V Measure the current of Ip. 2006-08-24 Established Revised 210801501306070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 14 @ Electrical Characteristics Test Procedures (continued) 4. Test Circuit4 Ng Parameter Conditions Measuring Method a SW1 =a, Voc = 12 V, Ver = 0.4 V, 9 | High-level output voltage Vive 0.75 V, Vy =0.7V Measure the voltage of Vo. SW1 =a, Vec = 12 V, Ver = 0.4 V, 10 | Low-level output voltage Vine = 0.75 V, Viy_= 0.8 V Measure the voltage of Vo. * SWl =b, Vec= 12 V, Ver = 0.4 V, 24 | Output sink current Vim = 0.75 V, Vy. = 0.8 V, Vey = 0.8 V Measure the current of Ipg . SW1 =), Vec = 12 V, Ver = 0.4 V, 25 | Output source current Vane = 0.75 V, Viy_=0.7 V, Veg = 0.8 V Measure the current of Ip, . Ver V, , Ay = 20log,g N, . Veu 26 | Open-loop gain SW1 =a, Voc = 12 V, Ver = 0.4 V Vai | . re Wa Vine 5. Test Circuit5 No Parameter Conditions Measuring Method 11 | Oscillation frequency pial = B SMI as Oseilloscope waveform four= a Hz Veo = 12 V, Veg = 15 V T low Dyiax = x 100 (% Vo MAX 7 me (%) 12 | Maximum duty ratio SW1=b, SW2=a, Voc = 12 V, Vig = 1.5 V 12V 6V 13 | Output saturation voltage SW1 =a, SW2 = b, Voc = 12 V, Ven = 0.5 V, Ver = 0.4 V, Ip =50 mA Measure the voltage of Vo. 14 | Output leak current SW1 =a, SW2= 6, Veco =12V, Vem = 0.3 V, Ver = 0.4 V, V5 =34V Measure the current of Iipar. SW1=b, SW2=a, 28 |RT pin voltage Veo = 12 V, Vag =1.5V Measure the voltage of Ver. 2006-08-24 Established Revised 210801501406070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.AN8015SH Prod uct Standards Total Pages Page 17 15 i Electrical Characteristics Test Procedures (continued) 6. Test Circuit6 Ne Parameter Conditions Measuring Method _ _ Measure the Vgcp voltage when the Vo changes from SW1=a, Vec = 12 V, : ne ; 15 | Input threshold voltage _ _ Low to High level while increasing the Vgcp voltage Vor = 0.4 V, Vip =2.1V gradually. SW1=b, Vec= 12 V, Vor = 0.4 V, Van = 1.5 V SW1=b, Veo = 12 V, Vor = 0.4 V, Vip = 2.1 V SW1=0, Voc=12V, Vor = 0.4 V, Vag = 1.5 V 16 | Input standby voltage Measure the voltage of V3. 17 | Input latch voltage Measure the voltage of V3. 18 | Charge current Measure the current of I, . Measure the Vp voltage when the Vo changes from 33 Comparator threshold SW1 =b, Voce = 12 V, Ver =0.4.V Low to High level while increasing the Vp Voltage 6 gradually. 2006-08-24 Established Revised 210801501506070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.Page 16 AN8015SH Total Pages 17 Product Standards Timing chart Hi Technical Data MO] ystH AO] yatyy MOT ystH A 00 ALE0 PANY /\ AIT A0TI Aes AVE Lt of > = Vo VO V7] yndino Joyereduioo uonosjoid jinos19-J10 WIOJOACAA 1039309 Jojsisuey jndjng qndyno royeredwos Wd ade}OA uid gS yudyno saem JepnsuelL yndur WA\d SW-pead [eAey] progsamyy yadur wotjo9}01d ymo119-HOYS jndjno reytjdure sony aspajai NO-y0"T | ran da . wi ABL][OA BOUIIATOY Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Revised Established 210801501606070 2006-08-24AN8015SH P rod U ct Sta n d a rd S Total Pages Page 17 17 Mi Usage Notes This IC uses the constant current given by the timing resistor Ry as the bias current of the triangular oscillation block and the PWM comparator for consumption current reduction. The total consumption current is approximately 1.8 mA (typical) when Ry is 15 kQ, and it increases to approximately 2.5 mA (typical) when Ry is 5.6 kQ. It is possible to use the circuit in the recommended operating range of 2 kHz to 500 kHz of the oscillation frequency. However, the timing resistor Ry versus the oscillation frequency should be set within the recommended range shown in figure 1. Also, refer to the figure 2, Timing capacitance-Oscillation frequency for setting the timing capacitance. For a high frequency use, the overshoot and undershoot amounts increase due to operation delay of the triangular oscillation comparator, and the maximum duty ratio drops. This effect can be alleviated by speeding up through the reduction of the resistor Ry and increase in the circuit current. Note that this IC can not be used as an IC for slave when the several ICs are operated in parallel synchronous mode. 1M 500 kK 100K 100 K 10K 10K Oscillation frequency foyr [Hz] Oscillation frequency foyr [Hz] 1K IK 5K56K 10K ISK 100 1 000 10 000 100 000 Timing resistance Ry [Q] Timing capacitance Cy [pF] Figure 1. Timing resistance recommended condition Figure 2. Timing capacitance-Oscillation frequency 2006-08-24 Established Revised 210801501706070 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.Regulations No. : $C3S0778 Total Pages Page 6 PACKAGE STANDARDS Package Code SSOP010-P-0225A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by K.Komichi H.Yoshida M.Okajima M. Itoh Established: 2004-01-19 Revised > 2007-02-13PACKAGE STANDARDS SSOP010-P-0225A Total Pages Page 6 1. Outline Drawing (0.50) \\ SEATING PLANE \ AAA 5 : vv Les | 339 Unitimm oN \ Weight 43 mg Body Material Epoxy Resin Lead Material : Cu Alloy Lead Finish Method : SnBi Plating Established: 2004-01-19 Revised : 2007-02-13 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.PACKAGE STANDARDS SSOP010-P-0225A Total Pages Page 6 3 2. Package Structure (Technical Report) Chip Material Si @ Leadframe material Cu alloy @ Inner lead surface Ag plating Outer lead surface SnBi plating @ Method Resin adhesive method Chip mount Material Adhesive material Method Thermo-compression bonding Wirebond ' Material Au Method Multiplunger molding Molding @ Material Epoxy resin Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Established: 2004-01-19 Revised > 2007-02-13PACKAGE STANDARDS Total Pages Page SSOP010-P-0225A 6 4 3. Mark Drawing Product Name Date Code Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Established: 2004-01-19 Revised > 2007-02-13PACKAGE STANDARDS Total Pages Page 6 5 SSOP010-P-0225A 4. Power Dissipation (Technical Report) 0.500 Mount On PWB[Glass-Epoxy: 50X50X0. at(mm)] Rth(j-a)=259.0C/W 0.400 | 9.386 = Cc 2 a 2 w a a 0,200 3 Without PWB a Rth(j-a)=348.0C/W 0.100 0.000 0 25 50 75 100 125 Ambient Temperature(C ) Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Established: 2004-01-19 Revised : 2007-02-13PACKAGE STANDARDS SSOP010-P-0225A Total Pages Page 6 6 5. Power Dissipation (Supplementary Explanation) [Experiment environment] Power Dissipation (Technical Report) is a result in the experiment environment of SEMI standard conformity. (Ambient air temperature (Ta) is 25 degrees C) [Supplementary information of PWB to be used for measurement] The supplement of PWB information for Power Dissipation data (Technical Rport) are shown below. Indication Total Layer Resin Material Glass-Epoxy 1-layer FR-4 4-layer 4-layer FR-4 [Notes about Power Dissipation (Thermal Resistance) ] Power Dissipation values (Thermal Resistance) depend on the conditions of the surroundings, such as specification of PWB and a mounting condition , and a ambient temperature. (Power Dissipation (Thermal Resistance) is not a fixed value.) The Power Dissipation value (Technical Report) is the experiment result in specific conditions (evaluation environment of SEMI standard conformity) ,and keep in mind that Power Dissipation values (Thermal resistance) depend on circumference conditions and also change. [Definition of each temperature and thermal resistance] Ta =: Ambient air temperature <The temperature of the air is defined at the position where the convection, radiation, etc. dont affect the temperature value, and it's separated from the heating elements. Tc : Its the temperature near the center of a package surface. The package surface is defined at the opposite side if the PWB. Tj + Semiconductor element surface temperature (Junction temperature.) Rth(j-c) : The thermal resistance (difference of temperature of per 1 Watts) between a semiconductor element junction part and the package surface Rth(c-a) : The thermal resistance (difference of temperature of per 1 Watts) between the package surface and the ambient air Rth(j-a) : The thermal resistance (difference of temperature of per 1 Watts) between a semiconductor element junction part and the ambient air Ta SSL a gS eee e s [Definition formula] Tj=(Rth(j-c)+Rth(c-a)}X P+Ta Rth(c-a) =Rth(j-a) XP+Ta Rth(j-a) Tj-T Rth-c)= = S c) Rth(j-c) Tc-T wee. Rth(c-a)= = = C) Tj.T PWB \ \ Rth(j-a) = a CCW) \ Package = Rth(j-c)-+Rth(c-a) emiconductor element Fig1. Definition image P:power(W) Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Established: 2004-01-19 Revised > 2007-02-13