APM6006NFPC-TUG - Anpec Electronics Corp.

N-Channel Enhancement Mode MOSFET

Rev. A.1 - Dec., 2009 www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

APM6006NFP

Pin Description

Ordering and Marking Information

Features

Applications

•60V/34A,

RDS(ON)=21mΩ (typ.) @ VGS=10V

RDS(ON)=29mΩ (typ.) @ VGS=4.5V

•Reliable and Rugged

•Lead Free and Green Devices Available

(RoHS Compliant)

• Power Management in LED, DC/DC Converter,

DC/AC Inverter Systems.

N-Channel MOSFET

Top View of TO-220-FP

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-

tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements

of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to

mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

APM6006N

Handling Code

Temperature Range

Package Code

FP : TO-220-FP

Operating Junction Temperature Range

C : -55 to 150 oC

Handling Code

TU : Tube

Assembly Material

G : Halogen and Lead Free Device

APM6006N FP : APM6006N

XXXXX XXXXX - Date Code

Assembly Material

Rev. A.1 - Dec., 2009 www.anpec.com.tw2

APM6006NFP

Absolute Maximum Ratings

Symbol

Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS Drain-Source Voltage 60

VGSS Gate-Source Voltage ±25 V

TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 150 °C

IS Diode Continuous Forward Current TC=25°C 20 A

Mounted on Large Heat Sink

TC=25°C 136

IDP 300µs Pulse Drain Current Tested TC=100°C 88 A

TC=25°C 34

ID Continuous Drain Current TC=100°C 22 A

TC=25°C 50

PD Maximum Power Dissipation TC=100°C 20 W

RθJC Thermal Resistance-Junction to Case 2.5

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM6006NFP

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V

VDS=48V, VGS=0V - - 1

IDSS Zero Gate Voltage Drain Current TJ=85°C

- - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 2 3 V

IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100

Drain-Source On-state Resistance VGS=10V, IDS=20A - 21 26

RDS(ON) a

Drain-Source On-state Resistance VGS=4.5V, IDS=10A - 29 38 mΩ

Diode Characteristics

VSDa Diode Forward Voltage ISD=20A, VGS=0V - 0.85

1.1 V

trr Reverse Recovery Time - 36 - ns

Qrr Reverse Recovery Charge ISD=20A, dlSD/dt=100A/µs

- 41 - nC

Rev. A.1 - Dec., 2009 www.anpec.com.tw3

APM6006NFP

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM6006NFP

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Dynamic Characteristics b

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

- 0.7 - Ω

Ciss Input Capacitance - 1500

Coss Output Capacitance - 150

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=30V,

Frequency=1.0MHz - 90 -

td(ON) Turn-on Delay Time - 11 22

Tr Turn-on Rise Time - 10 20

td(OFF) Turn-off Delay Time - 35 64

Tf Turn-off Fall Time

VDD=30V, RL=30Ω,

IDS=1A, VGEN=10V,

RG=6Ω - 10 20

Gate Charge Characteristics b

Qg Total Gate Charge - 38 54

Qgs Gate-Source Charge - 8.2 -

Qgd Gate-Drain Charge

VDS=30V, VGS=10V,

IDS=20A - 10 -

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

Rev. A.1 - Dec., 2009 www.anpec.com.tw4

APM6006NFP

Typical Operating Characteristics

020 40 60 80 100 120 140 160

TC=25oC

020 40 60 80 100 120 140 160

TC=25oC,VG=10V

0.1 110 100200

0.1

100

300

300µs

1ms

10ms

100ms

Rds(on) Limit

TC=25oC

1E-4 1E-3 0.01 0.1 110 100

0.01

0.1

Mounted on minimum pad

RθJA : 62.5oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

Drain Current

Tj - Junction Temperature

ID - Drain Current (A)

Thermal Transient Impedance

Normalized Transient Thermal Resistance

Square Wave Pulse Duration (sec)

Safe Operation Area

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Rev. A.1 - Dec., 2009 www.anpec.com.tw5

APM6006NFP

Typical Operating Characteristics (Cont.)

0 1 2 3 4 5

3.5V

4.5V

VGS= 6,7,8,9,10V

0 10 20 30 40 50 60

VGS=4.5V

VGS=10V

345678910

IDS=20A

-50 -25 0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS =250µA

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Output Characteristics

RDS(ON) - On - Resistance (mΩ)

Drain-Source On Resistance

ID - Drain Current (A)

Gate-Source On Resistance

VGS - Gate - Source Voltage (V)

RDS(ON) - On - Resistance (mΩ)

Tj - Junction Temperature (°C)

Gate Threshold Voltage

Normalized Threshold Voltage

Rev. A.1 - Dec., 2009 www.anpec.com.tw6

APM6006NFP

Typical Operating Characteristics (Cont.)

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON@Tj=25oC: 21mΩ

VGS = 10V

IDS = 20A

0.0 0.3 0.6 0.9 1.2 1.5

0.1

100

Tj=150oC

Tj=25oC

0 5 10 15 20 25 30 35 40

300

600

900

1200

1500

1800

2100

Frequency=1MHz

Crss Coss

Ciss

0 5 10 15 20 25 30 35 40

10 VDS= 30V

IDS= 20A

Drain-Source On Resistance

Normalized On Resistance

Tj - Junction Temperature (°C)VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

IS - Source Current (A)

VDS - Drain-Source Voltage (V)

C - Capacitance (pF)

Capacitance Gate Charge

QG - Gate Charge (nC)

VGS - Gate-source Voltage (V)

Rev. A.1 - Dec., 2009 www.anpec.com.tw7

APM6006NFP

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

DUT

0.01Ω

VDD

VDS L

EAS

VDD

tAV

IAS

VDS

tpVDSX(SUS)

VDD

DUT

VGS

VDS

td(on) trtd(off) tf

VGS

VDS

90%

10%

Rev. A.1 - Dec., 2009 www.anpec.com.tw8

APM6006NFP

Package Information

TO-220-FP

E AA1

DL1

cA2

LMIN. MAX.

4.80

2.60

0.90 1.90

0.30 0.80

8.10 9.10

3.20

12.10

MILLIMETERS

b0.50 1.00

2.54 BSC

TO-220FP

9.70 10.70

0.100 BSC

MIN. MAX.

INCHES

0.189

0.102

0.020 0.039

0.035 0.075

0.012 0.031

0.319 0.358

0.476

0.382 0.421

4.20 0.165

0.126

0.650

0.157

0.570

13.00

14.50 16.50

4.00

14.50 0.512

0.571

3.60 0.142

2.10A2 2.90 0.083 0.114

12.90 0.508

3.00 0.118

1.60 0.063

Rev. A.1 - Dec., 2009 www.anpec.com.tw9

APM6006NFP

Classification Profile

Devices Per Unit

Package Type Unit Quantity

TO-220-FP Tube 50

Rev. A.1 - Dec., 2009 www.anpec.com.tw10

APM6006NFP

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000

<1.6 mm 260 °C 260 °C 260 °C

1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

≥350

<2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C

HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C

PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C

TCT JESD-22, A104 500 Cycles, -65°C~150°C

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak

Temperature min (Tsmin)

Temperature max (Tsmax)

Time (Tsmin to Tsmax) (ts)

100 °C

150 °C

60-120 seconds

150 °C

200 °C

60-120 seconds

Average ramp-up rate

(Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL)

Time at liquidous (tL) 183 °C

60-150 seconds 217 °C

60-150 seconds

Peak package body Temperature

(Tp)* See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specified

classification temperature (Tc) 20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax)

6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Rev. A.1 - Dec., 2009 www.anpec.com.tw11

APM6006NFP

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,

Sindain City, Taipei County 23146, Taiwan

Tel : 886-2-2910-3838

Fax : 886-2-2917-3838