MCP73113-06SI/MF - Microchip Technology, Inc.

 2009-2013 Microchip Technology Inc. DS20002183E-page 1

MCP73113/4

Features:

• Complete Linear Charge Management Controller:

- Integrated Input Overvoltage Protection

- Integrated Pass Transistor

- Integrated Current Sense

- Integrated Reverse Discharge Protection

• Constant Current/Constant Voltage Operation

with Thermal Regulation

• 4.15V Undervoltage Lockout (UVLO)

• 18V Absolute Maximum Input with OVP:

- 6.5V (MCP73113)

- 5.8V (MCP73114)

• High Accuracy Preset V oltage Regulation Through

Full Temperature Range (-5°C to +55° C) : +0.5%

• Battery Charge Voltage Options:

- 4.10V, 4.20V, 4.35V or 4.4V

• Resistor Programmable Fast Charge Current:

- 130 mA-1100 mA

• Preconditioning of Deeply Depleted Cells:

- Available Options: 10% or Disable

• Integrated Precondition Timer:

- 32 Minutes or Disable

• Automatic End-of-Charge Control:

- Selectable Minimum Current Ratio:

5%, 7.5%, 10% or 20%

- Elapse Safety Timer: 4 HR, 6 HR, 8 HR or

Disable

• Automatic Recharge:

- Available Options: 95% or Disable

• Charge Status Output-Two Style Options

•Soft Start

• Temperature Range: -40°C to +85°C

• Packaging: DFN-10 (3 mm x 3 mm)

Applications:

• Low-Cost Li-Ion/Li-Poly. Battery Chargers

• MP3 Players

• Digital Still Camera

• Portable Media Players

• Handheld Devices

• Bluetooth® Headsets

• USB Chargers

Description:

The MCP73113/4 are highly integrated Li-Ion battery

charge management controllers for use in

space-limited and cost-sensitive applications. The

MCP73113/4 devices provide specific charge

algorithms for Li-Ion/Li-Polymer batteries to achieve

optimal capacity and safety in the shortest charging

time possible. Along with their small physical size, the

low number of external components make the

MCP73113/4 ideally suitable for portable applications.

The absolute maximum voltage, up to 18V, allows the

use of MCP73113/4 in harsh environments, such as

low cost wall wart or voltage spikes from plug/unplug.

The MCP73113/4 devices employ a constant current/

constant voltage charge algorithm. The various

charging voltage regulations provide design engineers

flexibility to use in different applications. The fast

charge, constant current value is set with one external

resistor from 130 mA to 1100 mA. The MCP73113/4

devices limit the charge current based on die

temperature during high power or high ambient

conditions. This thermal regulation optimizes the

charge cycle ti me while mainta ining device reliability.

The PROG pin of the MCP73113/4 also serves as

enable pin. When high-impedance is applied, the

MCP73113/4 will be in Standby mode.

The MCP73113/4 devices are fully specified over the

ambient temperature range of -40°C to +85°C. They

are available in a 10-lead, DFN package.

Package Types (Top View)

MCP73113/4

3x3 DFN *

VBAT

VDD

VBAT

VSS

7STAT

PROGVDD

* Includes Exposed Thermal Pad (EP); see Table 3-1.

NC 56NC

Single-Cel l Li-Ion/Li-Polymer Bat tery Charg e Management

Controller with Input Overvoltage Protection

MCP73113/4

DS20002183E-page 2  2009-2013 Mic rochip Technology Inc.

Typical Application

TABLE 1: AVAILABLE FACTORY PRESET OPTIONS

TABLE 2: STANDARD SAMPLE OPTIONS

Charge

Voltage OVP Preconditioning

Charge Current

Preconditioning

Threshold

Precondition

Timer

Elapse

Timer

End-of-

Charge

Control

Automatic

Recharge

Output

Status

4.10V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/

32 Minimum Disable/4 HR/

6 HR/8 HR 5%/7.5%/

10%/20% No/Yes Type 1/

Type 2

4.20V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/

32 Minimum Disable/4 HR/

6 HR/8 HR 5%/7.5%/

10%/20% No/Yes Type 1/

Type 2

4.35V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/

32 Minimum Disable/4 HR/

6 HR/8 HR 5%/7.5%/

10%/20% No/Yes Type 1/

Type 2

4.40V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/

32 Minimum Disable/4 HR/

6 HR/8 HR 5%/7.5%/

10%/20% No/Yes Type 1/

Type 2

Note 1: IREG: Regulated fast charge current

2: VREG: Regulated charge voltage

3: IPREG/IREG: Preconditioning charge current; ratio of regulated fast charge current

4: ITERM/IREG: End-of-Charge control; ratio of regulated fast charge current

5: MCP73113: VOVP = 6.5V, MCP73114: VOVP = 5.8V

6: VRTH/VREG: Recharge threshold; ratio of regulated battery voltage, 0% or 95%. 0% = Disabled

7: VPTH/VREG: Preconditioning threshold voltage

8: Output S tatus: Type 1 Fault Output Status = High Z, Type 2 Fault Output Status = Flashing

Part

Number

VREG OVP IPREG/IREG Precharge

Timer

Elapsed

Timer

ITERM/IREG Auto Recharge

Threshold

(0%=Disabled)

VPTH/VREG Output

Status

MCP73113-16S/MF 4.10V 6.5V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1

MCP73113-06S/MF 4.20V 6.5V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1

MCP73114-0NS/MF 4.20V 5.8V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1

Note 1: Customers should contact their distributor, representatives or field application engineer (FAE) for support and samples.

Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of

this document. Technic al support is available through the web site at: http//support.microchip.com.

–

STAT

VDD

PROG

VBAT

1-Cell

AC-DC Adapter

VDD

VSS

VSS 8

RLED

CIN COUT

VBAT

RPROG

Li-Ion

Battery

MCP73113/4 Typical Application

 2009-2013 Microchip Technology Inc. DS20002183E-page 3

MCP73113/4

Functional Block Diagram

REFERENCE,

BIAS, UVLO,

AND SHDN

VREF (1.21V)

STAT

PROG

VBAT

VSS

DIRECTION

CONTROL

PRECONDITION

TERM

CHARGE

CURRENT

LIMIT

CHARGE

CONTROL,

TIMER,

AND

STATUS

LOGIC

VREF

VOREG

VOREG UVLO

VDD

Input OverVP

VDD

5.8V/6.5V

Thermal Regulation

TSD

110°C

*Recharge

VBAT

95% VREG

*Only available on selected options

G=0.001

MCP73113/4

DS20002183E-page 4  2009-2013 Mic rochip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 5

MCP73113/4

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

VDD................................................................................18.0V

VPROG ..............................................................................6.0V

All Inputs and Outputs w.r.t. VSS............... -0.3 to (VDD+0.3)V

Maximum Junction Temperature, TJ............Internal ly Li mited

Storage temperature ....... .. .. .... .. .. .. ....... .. .... .. .-65°C to +150°C

ESD protection on all pins

Human Body Model (1.5 k in Series with 100 pF)4kV

Machine Model (200 pF, No Series Resistance).............300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to m aximum rating conditions for extended pe riods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typical) + 0.3V] to 6V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Supply Input

Input Voltage Range VDD 4—16V

Operating Supply Voltage VDD 4.2 — 6.5 V

Supply Current ISS — 4 5.5 µA Shutdown (VDD < VBAT - 150 mV)

— 700 1500 µA Charging

— 30 100 µA Standby (PROG Floating)

— 50 150 µA Charge Complete; No Battery;

VDD < VSTOP

Battery Discharge Current

Output Reverse Leakage

Current IDISCHARGE — 0.5 2 µA Standby (PROG Floating)

— 0.5 2 µA Shutdown (VDD < VBAT,

or VDD < VSTOP)

6 17 µA Charge Complete; VDD is present

Undervoltage Lockout

UVLO Start Threshold VSTART 4.10 4.15 4.25 V

UVLO Stop Threshold VSTOP 4.00 4.05 4.15 V

UVLO Hysteresis VHYS — 100 — mV

Overvoltage Protection

OVP Start Threshold VOVP 6.4 6.5 6.6 V MCP73113

5.8 5.9 6.0 V MCP73114

OVP Hysteresis VOVPHYS — 150 — mV

Voltage Regulation (Constant-Voltage Mode)

Regulated Output Voltage

Options VREG 4.079 4.10 4.121 V TA = -5°C to 55°C

4.179 4.20 4.221 V VDD = [VREG(Typical)+1V]

4.328 4.35 4.372 V IOUT = 50 mA

4.378 4.40 4.422 V

Output Voltage Tolerance VRTOL -0.5 — 0.5 %

Line Regulation VBAT/

VBAT)/VDD|— 0.05 0.20 %/V VDD = [VREG(Typical)+1V] to 6V

IOUT = 50 mA

Load Regulation VBAT/VBAT| — 0.05 0.20 % IOUT = 50 mA - 150 mA

VDD = [VREG(Typical)+1V]

Supply Ripple Attenuation PSRR — -46 — dB IOUT = 20 mA, 10 Hz to 1 kHz

—-30—dBI

OUT = 20 mA, 10 Hz to 10 kHz

Note 1: Not production tested. Ensured by design.

MCP73113/4

DS20002183E-page 6  2009-2013 Mic rochip Technology Inc.

Battery Short Protection

BSP Start Th reshold VSHORT —1.7—V

BSP Hysteresi s VBSPHYS — 150 — mV

BSP Regulation Current ISHORT —25—mA

Current Regulation (Fast Charge, Constant-Current Mode)

Fast Charge Current

Regulation IREG 130 — 1100 mA TA = -5°C to +55°C

— 130 — mA PROG = 10 k

— 1000 — mA PROG = 1.1 k

Charge Current Tolerance IRTOL —10—%

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)

Precondition Current Ratio IPREG / IREG 8 10 15 % PROG = 1 kto 10 k

TA = -5°C to +55°C

— 100 — % No Preconditioning

Precondition Voltage

Threshold Ratio VPTH / VREG 64 66.5 69 % VBAT Low-to-High

69 71.5 74 %

Precondition Hysteresis VPHYS — 100 — mV VBAT High-to-Low (Note 1)

Charge Termination

Charge Term ination

Current Ratio ITERM / IREG 3.75 5 6.25 % PROG = 1 kto 10 k

TA = -5°C to +55°C

5.6 7.5 9.4 %

7.5 10 12.5 %

15 20 25 %

Automatic Recharge

Recharge Voltage

Threshold Ratio VRTH / V REG 93 95.0 97 % VBAT High-to-Low

No Automatic Recharge

—0—%

Pass Transistor ON-Resistance

ON-Resistance RDSON — 350 — mVDD = 4.5V, TJ = 105°C (Note 1)

Status Indicator – STAT

Sink Current ISINK —2035mA

Low Output Voltage VOL —0.20.5VI

SINK = 4 mA

Input Leakage Current ILK — 0.001 1 A High-Impedance, VDD on pin

PROG Input

Charge Impedance Range RPROG 1—21k

Shutdown Impedance RPROG 70 200 — kImpedance for Shutdown

PROG Voltage Range VPROG 0—5V

Automatic Power Down

Entry Threshold VPDENTRY VBAT +

10 mV VBAT +

50 mV — V 2.3V < VBAT < VREG

VDD Falling

Automatic Power Down

Exit Threshold VPDEXIT —V

BAT +

150 mV VBAT +

250 mV V2.3V < VBAT < VREG

VDD Rising

Thermal Shutdown

Die Temperature TSD — 150 — C

Die Temperature

Hysteresis TSDHYS —10—C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typical) + 0.3V] to 6V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Note 1: Not production tested. Ensured by design.

 2009-2013 Microchip Technology Inc. DS20002183E-page 7

MCP73113/4

AC CHARACTERISTICS

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to +85°C.

Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Elapsed Timer

Elapsed T imer Period tELAPSED — 0 — Hours Timer Disabled

3.6 4.0 4.4 Hours

5.4 6.0 6.6 Hours

7.2 8.0 8.8 Hours

Preconditioning Timer

Preconditioning Timer Period tPRECHG — 0 — Hours Disabled Timer

0.4 0.5 0.6 Hours

Status Indicator

Status Output turn-off delay tOFF — — 500 µs ISINK = 1mA to 0mA

(Note 1)

Status Output turn-on delay tON — — 500 µs ISINK = 0mA to 1mA

(Note 1)

Note 1: Not production tested. Ensured by design.

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (Typical) + 0.3V] to 6V.

Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Temperature Ranges

Specified Temperature Range TA-40 — +85 °C

Operating Temperat ure Range TJ-40 — +125 °C

Storage Temperature Range TA-65 — +150 °C

Thermal Package Resistances

Thermal Resistance, DFN-10 (3x3) JA — 64 — °C/W 4-Layer JC51-7 S tandard Board,

Natural Convection

JC —12—°C/W

MCP73113/4

DS20002183E-page 8  2009-2013 Mic rochip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 9

MCP73113/4

2.0 TYPICAL PERFORMANCE CURVES

Note: Unles s oth erwi se in dic ate d, VDD = [VREG(Typical) + 1V], IOUT = 50 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-1: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-2: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-3: Battery Regulation Voltage

(VBAT) vs. Ambient Temperature (TA).

FIGURE 2-4: Battery Regulation Voltage

(VBAT) vs. Ambient Temperature (TA).

FIGURE 2-5: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-6: Charge Current (IOUT) vs.

Supply Voltage (VDD).

Note: The g raph s and tabl es pro vided follow ing t his no te are a st atis tical summ ary ba sed on a lim ited nu mber of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.180

4.185

4.190

4.195

4.200

4.205

4.210

4.215

4.220

4.5 4.8 5.0 5.3 5.5 5.8

6.0

Battery Regulation Voltage (V)

Supply Voltage (V)

ILOAD = 50 mA

VBAT = 4.2V

TA = +25 C

4.180

4.185

4.190

4.195

4.200

4.205

4.210

4.215

4.220

4.5 4.8 5.1 5.4 5.7 6.0

Supply Voltage (V)

Battery Regulation Voltage (V)

ILOAD

= 150 mA

VBAT

= 4.2

TA = +25

°C

4.170

4.175

4.180

4.185

4.190

4.195

4.200

4.205

4.210

4.215

4.220

-5 5 1525354555

Ambient Temperature (°C)

Battery Regulation Voltage (V)

ILOAD = 50 mA

VDD = 5.2V

4.170

4.175

4.180

4.185

4.190

4.195

4.200

4.205

4.210

4.215

4.220

-5 5 1525354555

Ambient Temperature (°C)

Battery Regulation Voltage (V)

ILOAD = 150 mA

VDD = 5.2V

100

200

300

400

500

600

700

800

900

1000

1100

1200

1 2 3 4 5 6 7 8 9 10 11121314151617181920

Programming Resistor (kΩ)

Charge Current (mA)

VDD

= 5.2

TA = +25

°C

750

770

790

810

830

850

870

890

910

930

950

4.54.85.15.45.76.0

Supply Voltage (V)

Charge Current (mA)

RPROG = 1.33 kΩ

TA = +25°C

MCP73113/4

DS20002183E-page 10  2009-2013 Microchip Technology Inc.

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unles s oth erwi se in dic ate d, VDD = [VREG(Typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-7: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-8: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-9: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-10: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-11: Charge Current (IOUT) vs.

Ambient Temperatu re (TA).

FIGURE 2-12: Output Leakage Current

(IDISCHARGE) vs. Ambient Temperature (TA).

475

495

515

535

555

575

595

615

635

655

675

4.5 4.8 5.1 5.4 5.7 6.0

Supply Voltage (V)

Charge Current (mA)

RPRO G = 2 kΩ

TA = +25°C

150

170

190

210

230

250

270

290

310

330

350

4.5 4.8 5.1 5.4 5.7 6.0

Supply Voltage (V)

Charge Current (mA)

RPROG = 5 kΩ

TA = +25°C

102

108

114

120

126

132

138

144

150

4.5 4.8 5.1 5.4 5.7 6.0

Supply Voltage (V)

Fast Charge (mA)

RPROG = 10 kΩ

TA = +25°C

4.54.85.15.45.76.0

Supply Voltage (V)

Charge Curent (mA)

RPROG = 20 kΩ

TA = +25°C

750

770

790

810

830

850

870

890

910

930

950

-5 5 1525354555

Ambient Temperature (°C)

Charge Current (mA)

RPROG

= 1.33 kΩ

VDD = 5.2V

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

-5.0 5.0 15.0 25.0 35.0 45.0 55.0

Ambient Temperature (°C)

Discharge Current (uA)

VDD < VBAT

VDD < VSTOP

End of Charge

 2009-2013 Microchip Technology Inc. DS20002183E-page 11

MCP73113/4

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unles s oth erwi se in dic ate d, VDD = [VREG(Typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-13: Overvolt age Protection Start

(50 ms/Div).

FIGURE 2-14: Overvoltage Protection Stop

(50 ms/Div).

FIGURE 2-15: Load Transient Response

(ILOAD = 50 mA, Output: 100 mV/Div,

Time: 100 µs/Div).

FIGURE 2-16: Complete Charge Cycle

(875 mAh Li-Ion Battery.

FIGURE 2-17: Line Transient Response

(ILOAD = 10 mA, Output: 1.0V/Div,

Source: 2.0V/Div).

FIGURE 2-18: Line Transient Response

(ILOAD = 100 mA, Output: 1.0V/Div,

Source: 2.0V/Div).

Charge Current

Input Voltage

Battery Voltage

Charge Current

Inp u t Vol ta g e

Battery Voltage

Output Current (mA)

Output Ripple (mV)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 153045607590105120

Time (Minutes)

Battery Voltage (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Supply Current (A)

RPROG = 2 kΩ

875 mAh Battery

Source Voltage (V)

Output Ripple (V)

Source Voltage (V)

Output Ripple (V)

MCP73113/4

DS20002183E-page 12  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 13

MCP73113/4

3.0 PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLES

3.1 Battery Management Input Supply

(VDD)

A supply voltage of [VREG (Typical) + 0.3V] to 6.0V is

recomm ended. Bypass to VSS w i th a mini mu m o f 1 µF.

The VDD pin is rat ed 18V absolute ma ximum to preve nt

sudden rise of input voltage from spikes or low-cost

AC-DC wall adapter.

3.2 Battery Charge Control Output

(VBAT)

Connect to the positive terminal of the battery. Bypass

to VSS with a minimum of 1 µF to ensure loop stability

when the battery is disconnected.

3.3 No Connect (NC)

No connect.

3.4 Battery Management 0V Reference

(VSS)

Connect to the negative terminal of the battery and

input supply.

3.5 Status Output (STAT)

STAT is an op en-drai n logi c ou tput fo r conn ectio n to a n

LED for charge status indication in stand-alone

applications. Alternatively, a pull-up resistor can be

applied for interfacing t o a host microcontroller . Refer to

Table 5-2 for a summary of the status output during a

charge cycle.

3.6 Current Regulation Set (PROG)

The fast c harge curren t is set by placing a resistor from

PROG to VSS during Constant-Current (CC) mode.

PROG pi n is rated up to 5V with 6 V a bsolu te ma ximum

value.

The PROG pin also serves as a charge control enable

pin. Allowing the PROG pin to float or connecting the

pin to an impedance greater than 200 k will disable

the MCP73113/4 charger. Refer to Section 5.5

“Constant Current MODE – Fast Charge” for

details.

3.7 Exposed Pad (EP)

The Exposed Thermal Pad (EP) should be connected

to the exposed copper area on the Printed Circuit

Board (PCB) to enhance thermal power dissipation.

Additional vias on the copper area under the

MCP73113/4 device will improve the performance of

heat dissipation and simplify the assembly process.

MCP73113/4

Symbol I/O Function

DFN-10

1, 2 VDD I Battery Management Input Supply

3, 4 VBAT I/O Battery Charge Control Output

5, 6 NC — No Connection

7 STAT O Battery Charge Status Output

8, 9 VSS — Battery Management 0V Reference

10 PROG I/O Battery Charge Current Regulation Program and Charge Control Enable

11 EP — Exposed Pad

MCP73113/4

DS20002183E-page 14  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 15

MCP73113/4

4.0 DEVICE OVERVIEW

The MCP73113/4 are simple, but fully integrated linear charge management controllers. Figure 4-1 depicts the

operational flow algorithm.

FIGURE 4-1: The M CP 7311 3/4 Flowc hart.

VBAT < VPTH

Timer Expired

SHUTDOWN MODE

VDD < VUVLO

VDD < VPD

PROG > 200 k

STAT = high Z

TEMPERATURE FAULT

No Charge Curren t

STAT = Flashing (Type 2)

STAT = high Z (Type 1)

Timer Suspended

TIMER FAULT

No Charge C urr en t

STAT = Flashing (Type 2)

STAT = high Z (Type 1)

Timer Suspended

PRECONDITIONING MODE

Charge Current = IPREG

STAT = LOW

T imer Reset

Timer Enable

FAST CHARGE MODE

Charge Current = IREG

STAT = LOW

Timer Reset

Timer Enabled

CONSTANT VOLTAGE MODE

Charge Voltage = VREG

STAT = LOW

CHARGE COMPLETE MODE

No Charge Curren t

STAT = high Z

T imer Reset

VBAT > VPTH

VBAT = VREG

VBAT < ITERM

VBAT > VPTH

VBAT < VRTH

VDD < VOVP

VDD > VOVP

OVERVOLTAGE PROTECTION

No Charge Current

STAT = high Z

T imer Suspended

VDD > VOVP

VDD < VOVP

VDD > VOVP

VDD < VOVP

Timer Expired

TIMER FAULT

No Charge Current

STAT = Flashing (Type 2)

STAT = high Z (Type 1)

Timer Suspended

Die Temperature > TSD

Die Temper atu re < TSDHYS

Charge Mode Resume

BATTERY SHORT PROTECTION

Charge Current = ISHORT

STAT = Flashing (Type 2)

STAT = high Z (Type 1)

Timer Suspended

VBAT > VSHORT

VBAT < VSHORT

Charge Mode Resume

MCP73113/4

DS20002183E-page 16  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 17

MCP73113/4

5.0 DETAILED DESCRIPTION

5.1 Undervoltage Lockout (UVLO)

An internal undervoltage lockout (UVLO) circuit

monitors the input voltage and keeps the charger in

Shutdown mode until the input supply rises above the

UVLO th reshold. In the ev ent a battery is present whe n

the input power is applied, the input supply must rise

approximately 150 mV above the battery voltage

before the MCP73113/4 device becomes operational.

The UV LO c irc uit pl ace s the de vice in Shutdow n m od e

if the inp ut suppl y falls to approxi matel y 150 mV above

the battery voltage.The UVLO circuit is always active.

At any time, the input supply is below the UVLO

threshold or approximately 150 mV of the volt age at the

VBAT pin, the MCP73113/4 device is placed in a

Shutdo wn mode.

5.2 Overvoltage Protection (OVP)

An internal overvoltage protection (OVP) circuit

monitors the input voltage and keeps the charger in

Shutd own m ode when the inp ut supp ly ris es abov e the

OVP threshold. The hysteresis of OVP is

approximately 150 mV for the MCP73113/4 device.

The MCP7 3113/4 dev ice i s operat ion al bet ween U VLO

and OVP thres hold. The OVP circu it is also reco gnized

as overvoltage lockout (OVLO).

5.3 Charge Qualification

When t he inpu t power is appl ied, the input s upply must

rise 150 mV above the battery voltage before the

MCP73113/4 becomes operational.

The automatic power-down circuit places the device in

a Shutdown mode if the input supply falls to within

+50 mV of the battery voltage.

The automatic circuit is always active. At any time the

input supply is within +50 mV of the voltage at the

VBAT pin, the MCP73113/4 is placed in a Shutdown

mode.

For a charge cycle to begin, the automatic power-

down conditions must be met and the charge enable

input must be above the input high threshold.

5.3.1 BATTERY MANAGEMENT INPUT

SUPPL Y (V DD)

The VDD input is the input supply to the MCP73113/4.

The MC P73113 /4 auto maticall y enter s a Power- Down

mode if the voltage on the VDD input falls to within

+50 mV of the battery voltage. This feature prevents

draining the battery pack when the VDD supply is not

present.

5.3.2 BATTERY CHARGE CONTROL

OUTPUT (VBAT)

The battery charge control output is the drain terminal

of an internal P-channel MOSFET. The MCP73113/4

devices provide constant current and voltage

regulation to the battery pack by controlling this

MOSFET in the linear region. The battery charge

control output should be connected to the positive

terminal of the battery pack.

5.3.3 BATTERY DETECTION

The MCP73113/4 detects the battery presence by

monitori ng the vo lta ge at VBAT. The c harge flo w will in i-

tiate when the voltage on VBAT is below the VRECHARGE

threshol d. Refer to Section 1.0 “Electrical Character-

istics” for VRECHARGE values. The value will be the

same for the non-rechargeable device.

When VBAT > VREG + hysteresis, the charge will be

suspended or not started, depending on the current

charge status, to prevent overcharging.

5.4 Preconditioning

If the voltage at the VBAT pin is less than the

preconditioning threshold, the MCP73113/4 device

enters a Preconditioning mode. The preconditioning

threshold is factory set. Refer to Section 1.0

“Electrical Characteristics” for preconditioning

threshold options.

In this mode, the MCP73113/4 device supplies 10% of

the fast charge current (established with the value of

the resis tor connected to the PRO G pin) to the battery.

When the voltage at the VBAT pin rises above the pre-

conditioning threshold, the MCP73113/4 device enters

the constant current (Fast Charge) mode.

5.4.1 TIMER EXPIRED DURING

PRECONDITIONING MODE

If the inte rnal timer expires before the vol tage thres hold

is reached for Fast Charge mode, a timer fault is

indicated and the charge cycle terminates. The

MCP73113/4 device remains in this condition until the

battery is removed or input power is cycled. If the

battery is removed, the MCP73113/4 device enters the

Standby mode where it remains until a battery is

reinserted.

Note: The MCP73113/4 also offer options with

no preconditioning.

Note: The typical preconditioning timer for

MCP73113/4 is 32 minutes. The

MCP73113/4 also offer options with no

preconditioning timer.

MCP73113/4

DS20002183E-page 18  2009-2013 Microchip Technology Inc.

5.5 Constant Current MODE – Fast

Charge

During the Constant-Current mode, the programmed

charge current is supplied to the battery or load.

The charge current is established using a single

resistor from PROG to VSS. The program resistor and

the charge current are calculated using the following

equations:

EQUATION 5-1:

EQUATION 5-2:

Table 5-1 provides commonly seen E96 (1%) and E24

(5%) resistors for various charge current to reduce

design time.

TABLE 5-1: RESISTOR LOOK-UP TABLE

Cons tant -Cur rent mod e is main tain ed u ntil t he volta ge

at the VBAT pin reaches the regulation voltage, VREG.

When Constant-Current mode is invoked, the internal

timer is reset.

5.5.1 TIMER EXPIRED DURING

CONSTANT CURRENT – FAST

CHARGE MODE

If the i nternal time r expi res b efore th e recharg e vol tag e

threshold is reached, a timer fault is indicated and the

charge cycle terminates. The MCP73113/4 device

remains in this condition until the battery is removed. If

the battery is removed or input power is cycled, the

MCP73113/4 device enters the Sta ndb y m ode where it

remains until a battery is reinserted.

5.6 Constant-Voltage Mode

When the voltage at the VBAT pin reaches the

regulation voltage, VREG, constant voltage regulation

begins. The regulation voltage is factory set to 4.10V,

4.20V, 4. 35V or 4.40V with a toleranc e of ± 0.5%.

5.7 Charge Termination

The cha rge cy cle is termi nated w hen, during Const ant -

Voltage mode, the average charge current diminishes

below a threshold established with the value of 5%,

7.5%, 10% or 20% of fast charge current or internal

timer has expired. A 1 ms filter time on the termination

comparator ensures that transient load conditions do

not result in premature charge cycle termination. The

timer peri od is factory set and can be disable d. Refer to

Section 1.0, "Electrical Characteristics" for timer

period op tions.

5.8 Automatic Recharge

The MCP73113/4 device continuously monitors the

voltage at the VBAT pin in t h e Ch a rge Co mp l et e mo de .

If the voltage drops below the recharge threshold,

another charge cycle begins and current is once again

suppli ed to the batte ry or loa d. The recha r ge thres hol d

is factory set. Refer to Section 1.0, "Electrical

Characteristics" for recharge threshold options.

For the MCP73113/4 devices with no recharge option,

the MCP73113/4 will go into Standby mode when a

termination condition is met. The charge will not restart

until at least one of the following conditions have been

met:

• Battery is removed from the system and inserted

again

•V

DD is removed and plugged in again

• RPROG is disconnected (or high-impedance) and

reconnected

Charge

Current (mA)

Recommended

E96 Resistor ()

Recommended

E24 Resistor ()

130 10k 10k

150 8.45k 8.20k

200 6.20k 6.20k

250 4.99k 5.10k

300 4.02k 3.90k

350 3.40k 3.30k

400 3.00k 3.00k

450 2.61k 2.70k

500 2.32k 2.37k

550 2.10k 2.20k

600 1.91k 2.00k

650 1.78k 1.80k

700 1.62k 1.60k

750 1.50k 1.50k

800 1.40k 1.50k

850 1.33k 1.30k

900 1.24k 1.20k

950 1.18k 1.20k

1000 1.10k 1.10k

1100 1.00k 1.00k

IREG 1104 R 0.93–



Where:

RPROG =kilo-ohms (k)

IREG = milliampere (mA)

Where:

RPROG = kilo-ohms (k)

IREG = millia mpere (mA)

RPROG = 10^ 1104

(log(IREG)/(-0.93))log

Note: The MCP73113/4 also offer options with

no automatic recharge.

 2009-2013 Microchip Technology Inc. DS20002183E-page 19

MCP73113/4

5.9 Thermal Regulation

The MCP73113/4 shall limit the charge current based

on the die temperature. The thermal regulation

optimizes the charge cycle time while maintaining

device reliability. Figure 5-1 depicts the thermal

regulation for the MCP73113/4 device. Refer to

Section 1.0 “Electrical Characteristics” for thermal

package resistances and Section 6.1.1.2 “Thermal

Considerations” for calculating power dissipation.

FIGURE 5-1: Charge Current (IOUT) vs.

Junction Temperature (TJ).

5.10 Thermal Shutdown

The MCP73113/4 suspends the charge if the die

temperature exceeds +150°C. Charging will resume

when the die temperature has cooled by

approximately 10°C. The thermal shutdown is a

secondary safety feature in the event that there is a

failure within the thermal regulation circuitry.

5.11 Status Indicator

The charg e st atus output s are op en-dr ain outp uts with

two different states: Low (L), and High-Impedance

(high-Z). The charge status outputs can be used to

illuminate LEDs. Optionally, the charge status outputs

can be used as an interface to a host microcontroller.

Table 5-2 summarizes the state of the status outputs

during a c harg e cycle.

5.12 Battery Short Circuit Protection

When a single-cell Li-Ion battery is detected, an inter-

nal battery short circuit protection (BSP) circuit starts

monitori ng the battery vo ltage. Whe n VBAT is belo w th e

typical 1.7V battery short circuit protection threshold

voltage, the charging behavior is postponed. A 25 mA

(typical) detection current is supplied for recovering

from the battery short circuit condition.

Preconditioning mode resumes when VBAT raises

above the battery short circui t protection threshold. Th e

battery v ol tage must ris e a ppro xi ma tely 15 0 mV abov e

the battery short circuit protection voltage before the

MCP73113/4 device becomes operational.

100

200

300

400

500

600

25 35 45 55 65 75 85 95 105 115 125 135 145

Junction Temperature (°C)

Charge Current (mA)

VDD = 5.2V

RPROG = 2 kΩ

TABLE 5-2: STATUS OUTPUTS

CHARGE CYCLE STATE STAT

Shutdown high Z

Standby high Z

Preconditioning L

Constant Current Fast

Charge L

Constant Volt age L

Charge Complete - Standby h igh Z

Temperature Fault 1.6 second 50% D.C.

Flashing (T ype2)

high Z (Type 1)

Timer Fault 1.6 second 50% D.C.

Flashing (Ty pe 2)

high Z (Type 1)

Preconditioning Timer Fault 1.6 second 50% D.C.

Flashing (Ty pe 2)

high Z (Type 1)

MCP73113/4

DS20002183E-page 20  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 21

MCP73113/4

6.0 APPLICATIONS

The MCP73113/4 devices are designed to operate

with a host microcontroller or in stand-alone applica-

tions. The MCP73113/4 provides the preferred charge

algorithm for Lithium-Ion and Lithium-Polymer cells

Constant-current followed by Constant-voltage.

Figure 6-1 depicts a typical stand-alone application

circuit, while Figure 6-2 depicts the accompanying

charge pr of ile.

FIGURE 6-1: Typic al App li ca tio n Circui t.

FIGURE 6-2: Typic al Char ge Prof il e

(875 mAh Battery).

6.1 Application Circuit Design

Due to the low efficiency of linear charging, the most

important factors are thermal design and cost, which

are a direc t functio n of the in put volt age , out put current

and thermal impedance between the battery charger

and the a mbient c ooling ai r . The w orst-case s ituation i s

when the device has transitioned from the

Preconditioning mode to the Constant-Current mode.

In this s ituation, the battery charge r has to dissip ate the

maximum power. A trade-off must be made between

the charge current, cost and thermal requirements of

the charger.

6.1. 1 COMPONENT SELECTION

Selection of the external components in Figure 6-1 is

crucial to the integrity and reliability of the charging

system. The following discussion is intended as a guide

for the component selection process.

6.1.1.1 Charge Current

The preferred fast charge cur rent for Li-Ion/Li-Poly cell s

is below the 1C rate, with an absolute maximum curre nt

at the 2C rate. The recommended fast charge

current should be obtained from the battery

manufacturer. For example, a 500 mAh battery pack

with 0.7C preferred fast charge current has a charge

current of 350 mA. Charging at this rate provides the

shortest charge cycle times without degradation to the

battery pack performance or life.

–

STAT

VDD

PROG

VBAT

1-Cell

AC-DC Adapter

VDD

VSS

VSS 8

RLED

CIN COUT

VBAT

RPROG

Li-Ion

Battery

MCP73113/4 Typical Application

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 15 30 45 60 75 90 105 120

Supply Current (A)

Battery Voltage (V)

Time (Minutes)

RPROG = 2 K

875 mAh Battery

Note: Please consult with your battery supplier

or refer to the battery data sheet for

preferred charge rate.

MCP73113/4

DS20002183E-page 22  2009-2013 Microchip Technology Inc.

6.1.1.2 Thermal Considerations

The worst-case power dissipation in the battery

charger occurs when the input voltage is at the

maximum and the device has transitioned from the

Preconditioning mode to the Constant-Current mode.

In this case, the power dissipation is:

Power dissipation with a 5V, ±10% input voltage

source, 500 mA ±10% and preconditioning threshold

voltage at 2.7V is:

EQUATION 6-1:

This power dissipation with the battery charger in the

DFN-10 package will result approximately 63C above

room temperature.

6.1.1.3 External Capacitors

The MCP73113/4 are stable with or without a battery

load. In order to maintain good AC stability in the

Constant-Voltage mode, a minimum capacitance of

1 µF is recommended to bypass the VBAT pin to VSS.

This capacitance provides compensation when there is

no battery load. In addition, the battery and

interconnections appear inductive at high frequencies.

These ele ments are in the control feedback loop durin g

Constant-Voltage mode. Therefore, the bypass

capacitance may be necessary to compensate for the

inductive nature of the battery pack.

A minimum of 1 µF, is recommended for both the output

capacitor and the input capacitor for typical applica-

tions.

TABLE 6-1: MLCC CAPACITOR EXAMPLE

Virtually any good quality output filter capacitor can be

used, independent of the capacitor’s minimum

Effective Series Resistance (ESR) value. The actual

value of the capacitor (and its associated ESR)

depends on the output load current. A 1 µF ceramic,

tantalum or aluminum electrolytic capacitor at the

output is usually sufficient to ensure stability.

6.1.1.4 Revers e-Bl ocki ng Prote cti on

The MCP73113/4 provide protection from a faulted or

shorted input. Without the protection, a faulted or

shorted input w ould disch arge the b attery p ack throug h

the body diode of the internal pass transistor.

PowerDissipation VDDMAX VPTHMIN

–IREGMAX

=

Where:

VDDMAX = the maximum input voltage

IREGMAX = the maximum fast charge current

VPTHMIN = the minimum transition threshold

voltage

PowerDissipation 5.5V 2.7V–550mA



1.54W==

MLCC

Capacitors

Temperature

Range Tolerance

X7R -55C to +125C±15%

X5R -55C to +85C ±15%

 2009-2013 Microchip Technology Inc. DS20002183E-page 23

MCP73113/4

6.2 PCB Layout Issues

For optim um vol t ag e reg ula tion, place the batte ry pack

as clos e as possibl e to the de vice’ s VBAT and VSS pins,

recommended to minimize voltage drops along the

high current-carrying PCB traces.

If the PCB layout is used as a heat sink, adding many

vias in the heat si nk pad can help c onduct m ore heat to

the backp lane of the PCB, thus red ucing the maxi mum

junction temperature. Figure 6-4 and Figure 6-5 depict

a typical layo ut with PCB heat sinking.

FIGURE 6-3: Typic al Lay out (Top).

FIGURE 6-4: Typic al Lay out (Top Metal).

FIGURE 6-5: Typical Layout (Bottom).

MCP73113/4

DS20002183E-page 24  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 25

MCP73113/4

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

XXXX

10-Lead DFN (3x3)

YYWW

NNN

Example:

93HI

1229

256

Standard *

Part Number Code

MCP73113-06SI/MF 93HI

MCP73113-16SI/MF 83HI

MCP73114-0NSI/MF 9MHI

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanume ric trac ea bil ity code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-fr ee. The Pb- fre e JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked o n one lin e, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

MCP73113/4

DS20002183E-page 26  2009-2013 Microchip Technology Inc.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2009-2013 Microchip Technology Inc. DS20002183E-page 27

MCP73113/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP73113/4

DS20002183E-page 28  2009-2013 Microchip Technology Inc.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2009-2013 Microchip Technology Inc. DS20002183E-page 29

MCP73113/4

APPENDIX A: REVISION HISTORY

Revision E (November 2013)

The following is the list of modifications:

1. Updated the Functional Block Diagram.

2. Updated FIGURE 4-1: “The MCP73113/4

Flowchart.”

3. Minor typographical edits.

Revision D (February 2013)

The following is the list of modifications:

1. Updated the Functional Block Diagram.

2. Updated the DC Characteristics table.

3. Updated the Temperature Specifications table.

4. Updated Section 3.6 “Current Regulation Set

(PROG)”.

5. Updated Section 3.7 “Exposed Pad (EP)”.

6. Updated Section 5.3.3 “Battery Detection”.

7. Updated Equation 5-2.

8. Updated Section 5.12 “Battery Short Circuit

Protection”.

9. Updated Section 6.1.1.3 “External Capaci-

tors”.

Revision C (January 2010)

The following is the list of modifications:

1. DC Characteristics table: Removed the

minimum and maximum values for the BSP S tart

Threshold parameter.

Revision B (July 2009)

The following is the list of modifications:

1. Added MCP73114 device throughout the

document.

2. Updated specifications for the MCP73113/4

device famil y thro ugh out the docum en t.

3. Updated package marking information.

4. Updated the Product Identification System

page.

Revision A (May 2009)

• Original Releas e of th is Do cument.

MCP73113/4

DS20002183E-page 30  2009-2013 Microchip Technology Inc.

NOTES:

 2009-2013 Microchip Technology Inc. DS20002183E-page 31

MCP73113/4

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Device: MCP73113: Single-Cell Li-Ion/Li-Polymer Battery device

MCP73113T: Single-Cell Li-Ion/Li-Polymer Battery device,

Tape and Reel

MCP73114: Single-Cell Li-Ion/Li-Polymer Battery device

MCP73114T: Single-Cell Li-Ion/Li-Polymer Battery device,

Tape and Reel

Temperature

Range: I= -40C to +85C (Industrial)

Package: MF = Plastic Dual Flat No Lead, 3x3 mm Body (DFN),

10-Lead

PART NO. XXX

PackageTemperature

Range

Device

Examples:

a) MCP73113-06SI/MF: Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

b) MCP73113-16SI/MF: Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

c) MCP73113T-06SI-MF: Tape and Reel,

Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

d) MCP73113T-16SI/MF: Tape and Reel,

Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

a) MCP73114-0NSI/MF: Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

b) MCP731 14T-0NSI/MF: Tape and Reel,

Single-Cell Li-Ion/Li-Polymer

Battery dev ic e

MCP73113/4

DS20002183E-page 32  2009-2013 Microchip Technology Inc.

NOTES:

 2004-2013 Microchip Technology Inc. DS20002183E-page 33

Information contained in this publication regarding device

applications a nd the lik e is pro vid ed only for your c on ve nience

and may be supers eded by u pdates. It is y our res po ns i bil it y to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash

and UNI/O are registered trademarks of Microchip T echnology

Incorporated in the U.S.A. and other countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MTP, SEEVAL and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom,

chipKIT, chipKIT logo, CodeGuard, dsPICDEM ,

dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONIT OR, FanSense, HI-TIDE, In -Circuit Seria l

Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,

Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA

and Z-Scale are trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip T echnology Incorporated

in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip

Tec hnolog y Germany II Gm bH & Co. KG, a subsidiary of

Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-62077-- 695-7

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that it s family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our

products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and ds PIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperiph erals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

QUALITY MANAGEMENT S

YSTEM

CERTIFIED BY DNV

== ISO/TS 16949 ==

DS20002183E-page 34  2009-2013 Microchip Technology Inc.

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Tel: 949-462-9523

Fax: 949-462-9608

New York, NY

Tel: 631-435-6000

San Jose, CA

Tel: 408-735-9110

Canada - Toronto

Tel: 905-673-0699

Fax: 905-673-6509

ASIA/PACIFIC

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

China - Beijing

Tel: 86-10-8569-7000

Fax: 86-10-8528-2104

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

China - Hangzhou

Tel: 86-571-2819-3187

Fax: 86-571-2819-3189

China - Hong Kong SAR

Tel: 852-2943-5100

Fax: 852-2401-3431

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

China - Shenzhen

Tel: 86-755-8864-2200

Fax: 86-755-8203-1760

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

ASIA/PACIFIC

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

India - Pune

Tel: 91-20-3019-1500

Japan - Osaka

Tel: 81-6-6152-7160

Fax: 81-6-6152-9310

Japan - Tokyo

Tel: 81-3-6880- 3770

Fax: 81-3-6880-3771

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Korea - Seoul

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Taiwan - Hsin Chu

Tel: 886-3-5778-366

Fax: 886-3-5770-955

Taiwan - Kaohsiung

Tel: 886-7-213-7830

Taiwan - Taipei

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

EUROPE

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Germany - Dusseldorf

Tel: 49-2129-3766400

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-14 4-44

Germany - Pforzheim

Tel: 49-7231-424750

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Italy - Venice

Tel: 39-049-7625286

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Poland - Warsaw

Tel: 48-22-3325737

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08 -91

Sweden - Stockholm

Tel: 46-8-5090-4654

UK - Wokingham

Tel: 44-118-921-5800

Fax: 44-118-921-5820

Worldwide Sales and Service

10/28/13