Single IGBTMOD™
HVIGBT Module
200 Amperes/6500 Volts
CM200HG-130H
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
18/05
Outline Drawing and Circuit Diagram
D
A
EB
L (2 PLACES)
J
C
K (4 PLACES)
DETAIL “A”
DETAIL “A” DETAIL “B”
DETAIL “B”
H
F
G
M
V
X
Y
H
W
Q
S
RTV
U
N
P
Z
AA
CC
BB
BB
DD
Dimensions Inches Millimeters
A 5.51 140.0
B 2.87 73.0
C 1.89+0.04/-0.0 48.0+1.0/-0.0
D 4.88 124.0
E 2.24 57.0
F 0.85 21.6
G 0.51 12.9
H 0.20 5.0
J 1.73 44.0
K M6 Metric M6
L M8 Metric M8
M 0.64 16.2
N 1.59 40.4
P 1.10 28.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(VCES), 200 Ampere Single
IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 200 130
Dimensions Inches Millimeters
Q 1.44 36.5
R 0.22 5.5
S 0.16 4.0
T 0.68 17.4
U 1.61 41.0
V 0.24 6.0
W 2.44 62.0
X 0.47 12.0
Y 0.14 3.5
Z 0.11 2.8
AA 0.06 1.6
BB 0.02 0.5
CC 0.05 Dia. 1.2 Dia.
DD 10° 10°
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
2 8/05
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200HG-130H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Operating Temperature T
opr -40 to 125 °C
Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) VCES 5800 Volts
Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) VCES 6300 Volts
Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) VCES 6500 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, Tc = 80°C) IC 200 Amperes
Peak Collector Current (Pulse) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE 200 Amperes
Emitter Surge Current** (Pulse) IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 2900 Watts
Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC
Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Module Weight (Typical) – 0.52 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 10200 Volts
Maximum Turn-Off Switching Current – 400 Amperes
(VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C)
Short Circuit Capability, Maximum Pulse Width – 10 µs
(VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C)
Maximum Reverse Recovery Instantaneous Power – 1200 kW
(VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C)
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Toprmax rating (125°C).
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
38/05
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current* ICES VCE = VCES, VGE = 0V, Tj = 25°C – – 3.0 mA
VCE = VCES, VGE = 0V, Tj = 125°C – 10 30.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 5.1 – Volts
IC = 200A, VGE = 15V, Tj = 125°C – 5.0 – Volts
Input Capacitance Cies VCE = 10V, VGE = 0V, – 41.0 – nF
Output Capacitance Coes f = 100kHz, – 2.5 – nF
Reverse Transfer Capacitance Cres Tj = 25°C – 0.7 – nF
Total Gate Charge QG VCC = 3600V, IC = 200A, VGE = 15V – 3.3 – µC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C – 4.0 – Volts
IE = 200A, VGE = 0V, Tj = 125°C – 3.6 – Volts
Turn-On Delay Time td(on) VCC = 3600V, IC = 200A, – 1.2 – µs
Turn-On Rise Time tr VGE1 = -VGE2 = 15V, RG(on) = 30Ω, – 0.35 – µs
Turn-On Switching Energy Eon Tj = 125°C, toff = 60µs, Inductive Load – 1.5 – J/P
Turn-Off Delay Time td(off) VCC = 3600V, IC = 200A, – 6.6 – µs
Turn-Off Fall Time 1 tf1 VGE1 = -VGE2 = 15V, – 0.5 – µs
Turn-Off Fall Time 2 tf2 RG(off) = 72Ω, – 3.3 – µs
Turn-Off Switching Energy Eoff Tj = 125°C, toff = 60µs, Inductive Load – 1.2 – J/P
Reverse Recovery Time 1** trr1 VCC = 3600V, IE = 200A, – 1.0 – µs
Reverse Recovery Time 2** trr2 die/dt = -670A/μs, – 2.4 – µs
Reverse Recovery Charge** Qrr Tj = 125°C, – 370 – µC
Reverse Recovery Energy** Erec toff = 60µs, Inductive Load – 0.7 – J/P
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 42.0 K/kW
Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 66.0 K/kW
Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, Thermal Grease Applied – 18.0 – K/kW
Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance – – 26.0 – – mm
Creepage Distance – – 56.0 – – mm
Internal Inductance LC-E(int) – – – – nH
Internal Lead Resistance RC-E(int) – – – – mΩ
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4 8/05
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
400
800
0
2000
0 2012 164 8
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
1200
1600 VGE = 20V
18V
12V
13V
14V
15V
10V
16V
1
2
3
0
8
7
6
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
0 500300 400100 200 0 500300 400100 200
VGE = 0V
Tj = 25°C
Tj = 125°C
4
5
COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
0.2
0.4
0.6
0
1.2
1.0
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
VCC = 3600V
VGE = ±15V
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
0.8
0 500300 400100 200
0.2
0.4
0.6
0
1.2
1.0
VCC = 3600V
VGE = ±15V
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
0.8
REVERSE RECOVERY ENERGY, Erec, (J/PULSE)
EMITTER CURRENT, IE, (AMPERES)
0.2
0.4
0
1.2
1.0
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
0 1204020 60 10080
VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C
0.6
0.8
0.2
0.4
0
1.2
1.0
0 1204020 60 10080
VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C
0.6
0.8
REVERSE RECOVERY ENERGY, Erec, (J/PULSE)
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARGE, Qrr, (mC)
EMITTER CURRENT, IE, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARGE, Qrr, (mC)
COLLECTOR CURRENT, IC, (AMPERES)
1050 2015
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
500
4000
3500
3000
2000
1500
1000
2500
Tj = 25°C
Tj = 125°C
VCE = 20V
SWITCHING TIME, td(on), (µs)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
101
100
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, td(off), (µs)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
101103
102
101
100
10-1
COLLECTOR CURRENT, IC, (AMPERES)
101103
102
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
58/05
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, tf, (µs)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, tr, (µs)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
500300 400200100
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eoff, (J/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
0
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, (J/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS, Eoff, (J/PULSE)
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, (J/PULSE)
GATE RESISTANCE, RG, (Ω)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (pF)
10-1 100101102
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
102
100
10-1
101
Cies
Coes
Cres
VGE = 15V
f = 100kHz
Tj = 25°C
TIME, (s)
TRANSIENT IMPEDANCE, Rth(j-c)
10-3 10-2 10-1 100101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
1.0
0.4
0
0.2
0.6
0.8
SINGLE PULSE
TC = 25°C
IGBT = Rth(j-c)Q =
42°K/kW
FWDI = Rth(j-c)D =
66°K/kW
COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
101
100
10-1
101103
102
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
500300 4002001000
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
12060 1008040200
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
12060 1008040200
VCC = 3600V
VGE = ±15V
RG(off) = 72Ω
RG(on) = 30Ω
LS = 200nH
Tj = 125°C
8
5
4
3
6
7
2
0
1
500300 4002001000
VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C
VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C
101
100
10-1
101103
102
VGE = 15V
Tj = 25°C
Tj = 125°C
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
