© 2015 IXYS CORPORATION, All Rights Reserved DS100654A(6/15)
X2-Class
Power MOSFET
N-Channel Enhancement Mode
IXTY2N65X2
IXTP2N65X2
VDSS = 650V
ID25 = 2A
RDS(on)
2.3
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 650 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 100 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 2.3
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C2A
IDM TC= 25C, Pulse Width Limited by TJM 4A
IATC= 25C1A
EAS TC= 25C 100 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C55W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-220 3.00 g
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
D (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY2N65X2
IXTP2N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 2 A
ISM Repetitive, pulse Width Limited by TJM 8 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 137 ns
QRM 508 nC
IRM 7.4 A
IF = 1A, -di/dt = 100A/μs
VR = 100V
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 1.1 1.8 S
RGi Gate Input Resistance 14
Ciss 180 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 129 pF
Crss 0.7 pF
Co(er) 22 pF
Co(tr) 45 pF
td(on) 15 ns
tr 19 ns
td(off) 20 ns
tf 14 ns
Qg(on) 4.3 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.8 nC
Qgd 2.1 nC
RthJC 2.27 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2015 IXYS CORPORATION, All Rights Reserved
IXTY2N65X2
IXTP2N65X2
Fig. 5. R
DS(on)
Normalized to I
D
= 1A Value v s.
Dra in Curr ent
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
D
- A m peres
R
DS(on)
- Normalized
VGS
= 10V
TJ = 1 25ºC
TJ = 25º C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigra de
I
D
- Amperes
Fig. 1. Output Characteristics @ T
J
= 2 5ºC
0.0
0.5
1.0
1.5
2.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
7V
5.5V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0.0
0.5
1.0
1.5
2.0
012345678910111213
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
7V
5V
6V
4V
Fig. 4. R
DS(on)
Normalized to I
D
= 1A Value v s.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50 -25 0 25 50 75 100 125 150
T
J
- D egr ees Centigrade
R
DS(on)
- Normalized
VGS
= 10V
I D = 2A
I D = 1A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 4 8 121620242832
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
6V
5V
5.5V
7V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY2N65X2
IXTP2N65X2
Fig. 7. Input Admittance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts
ID - A m peres
T
J
= 125ºC
25ºC
- 40º C
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
QG - NanoCoulombs
VGS - Volts
V
DS
= 325V
I
D
= 1A
I
G
= 1mA
Fig . 11. Capac itance
0
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH z
Ciss
Crss
Coss
Fig. 12. Output Capacitance Stored Energy
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_2N65X2(Z1-R25T50) 6-05-15-A
IXTY2N65X2
IXTP2N65X2
Fig. 14. Maxim um Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 13. Forward-Bias Safe Ope rating Area
0.01
0.1
1
10
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Singl e Pulse
25µs
1ms
100µs
R
DS(
on
)
Limit
10ms
DC
