ZXMN6A11G
Document number: DS33556 Rev. 5 - 2 1 of 8
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60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(on) ID
TA = 25°C
60V 120m @ VGS= 10V 4.4A
180m @ VGS= 4.5V 3.5A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor Control
• Uninterrupted power supply
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A11GTA See below 7 12 1,000
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
6A11
ZXMN
ZXMN = Product Type Marking Code, Line 1
6A11 = Product Type Marking Code, Line 2
D
S
G
Equivalent Circuit
Pin Out - Top
Top View
SOT223
ZXMN6A11G
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current VGS = 10V (Note 3)
TA = 70°C (Note 3)
(Note 2) ID 4.4
3.5
3.1 A
Pulsed Drain Current VGS = 10V (Note 4) IDM 15.6
Continuous Source Current (Body Diode) (Note 3) IS 5
Pulsed Source Current (Body Diode) (Note 4) ISM 15.6
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 2) PD
2.0
16 W
mW/°C
(Note 3) 3.9
31
Thermal Resistance, Junction to Ambient (Note 2) RJA 62.5 °C/W
(Note 3) 32.0
Thermal Resistance, Junction to Lead (Note 5) RJL 9.8
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A11G
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Thermal Characteristics
110
10m
100m
1
10
Tamb=25°C
2 5mm x 25mm
1oz FR4
Tamb=25°C
2 5mm x 25mm
1oz FR4
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Op erating Area
ID Drain Current (A)
VDS Dra in-Source Vol ta g e (V) 0 20 40 60 80 100 120 140 160
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Derating Curve
Temperature (°C)
Max P ower Dissipatio n (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
Transient Thermal Im pedan ce
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s ) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
2 5mm x 25mm
1oz FR4
25mm x 25mm
1oz FR4
Single Pulse
Tamb=25°C
Pulse P ower D is s ip a t io n
Pulse Width (s )
Maximum Power (W)
ZXMN6A11G
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 3.0 V
ID = 250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 6) RDS (ON) ⎯ 0.105 0.120 VGS = 10V, ID = 2.5A
⎯ 0.150 0.180 VGS = 4.5V, ID = 2A
Forward Transconductance (Notes 6 & 7) gfs ⎯ 4.9 ⎯ S VDS = 15V, ID = 2.5A
Diode Forward Voltage (Note 6) VSD ⎯ 0.85 0.95 V
IS = 2.8A, VGS = 0V, TJ = 25°C
Reverse Recovery Time (Note 7) tr
r
⎯ 21.5 ⎯ ns IS = 2.8A, di/dt = 100A/μs
TJ = 25°C
Reverse Recovery Charge (Note 7) Qr
r
⎯ 20.5 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 330 ⎯ pF VDS = 40V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss ⎯ 35.2 ⎯
Reverse Transfer Capacitance Crss ⎯ 17.1 ⎯
Gate Charge (Note 8) Q
g
⎯ 3.0 ⎯
nC
VGS = 4.5V VDS = 15V
ID = 2.5A
Total Gate Charge (Note 8) Q
g
⎯ 5.7 ⎯ VGS = 10V
Gate-Source Charge (Note 8) Q
g
s ⎯ 1.25 ⎯
Gate-Drain Charge (Note 8) Q
g
d ⎯ 0.86 ⎯
Turn-On Delay Time (Note 8) tD
(
on
)
⎯ 1.95 ⎯
ns VDD = 30V, ID = 2.5A,
RG = 6Ω, VGS = 10V
Turn-On Rise Time (Note 8) t
r
⎯ 3.5 ⎯
Turn-Off Delay Time (Note 8) tD
(
off
)
⎯ 8.2 ⎯
Turn-Off Fall Time (Note 8) tf ⎯ 4.6 ⎯
Notes: 6. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
ZXMN6A11G
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Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.1
1
10
2345
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
110
0.1
1
0.4 0.6 0.8 1.0 1.2
0.1
1
10
4V
10V 5V
3.5V
2.5V
Ou tp ut C haracteristics
T = 25°C
3V
VGS
ID Drain Current (A )
VDS Drain-Sou rce Voltage (V)
2V
2.5V
4V
10V 5V
3V
O u tp u t C h aracteristics
T = 150°C
VGS
3.5V
ID Drain Current (A )
VDS Dra in-So urce Voltag e ( V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Dra i n C u rrent (A)
VGS Gate-Source Voltage (V) Norm alised C urv es v Tem perature
RDS(on)
VGS = 10V
ID = 2.5A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junctio n Te mp erature (°C )
4.5V
4V
5V
3.5V
On -R esistance v D rain Current
T = 25°C
3V
10V
VGS
RDS(on) Drain-Source On-Resistance (Ω)
ID Drai n Cu rre nt (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
ZXMN6A11G
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Typical Characteristics - continued
110
0
100
200
300
400
500
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacit a nce (pF)
VDS - Drain - Source Voltage (V) 0123456
0
2
4
6
8
10 ID = 2.5A
VDS = 30V
G ate-Sou rce Voltage v Gate Charge
Cap acitance v Drain-Source Voltage Q - Ch arge (nC)
VGS Ga te-S o u rce Voltage ( V)
Test Circuit
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
V
GS
V
GS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on)
t(on)
td(on) trtr
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)
ZXMN6A11G
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Package Outline Dimensions
DIM Millimeters Inches
DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
Suggested Pad Layout
1.5
0.059
mm
inches
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.0
0.079
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2 8 of 8
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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