PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description HEXFET(R) Power MOSFET l D RDS(on) = 0.15 G Fifth Generation HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. VDSS = 200V ID = 18A S TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 18 13 72 150 1.0 20 247 18 15 8.1 -55 to +175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) 1 10/09/00 IRF640N/S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 200 --- --- 2.0 6.8 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.25 --- --- --- --- --- --- --- --- --- --- 10 19 23 5.5 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1160 185 53 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.15 VGS = 10V, ID = 11A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 11A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 11A 11 nC VDS = 160V 33 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 11A ns --- RG = 2.5 --- RD = 9.0, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 18 showing the A G integral reverse 72 --- --- S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 11A, VGS = 0V --- 167 251 ns TJ = 25C, IF = 11A --- 929 1394 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance RJC RCS RJA RJA www.irf.com Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) --- 0.50 --- --- 1.0 --- 62 40 Units C/W 2 IRF640N/S/L 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 4.5V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 4.5V 1 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 C 7.0 10 100 Fig 2. Typical Output Characteristics 100 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 20s PULSE WIDTH TJ = 175C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 3.5 ID = 18A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF640N/S/L 2500 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1500 Ciss 1000 Coss 500 Crss 0 V DS= 160V V DS= 100V V DS= 40V 16 12 8 4 0 1 10 100 0 1000 20 40 60 80 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) ID = 11A 100 TJ = 175 C 10 TJ = 25 C 1 10us 100us 10 1ms 10ms 1 0.1 0.2 TC = 25 C TJ = 175 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.6 0.1 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 IRF640N/S/L RD VDS 20 20 VGS ID , Drain Current (A) ID , Drain Current (A) D.U.T. RG 16 16 + V DD - 10V 12 12 Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit 8 VDS 4 90% 4 0 0 25 25 50 50 75 100 125 150 125 C) TC 75 , Case100 Temperature (150 TC , Case Temperature ( C) 175 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D R IV E R D .U .T RG + - VD D IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp A EAS , Single Pulse Avalanche Energy (mJ) IRF640N/S/L 600 ID 4.4A 7.6A BOTTOM 11A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 IRF640N/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF640N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .87 (.11 3 ) 2 .62 (.10 3 ) 10.5 4 (.4 15 ) 10.2 9 (.4 05 ) -B- 3 .78 (.14 9 ) 3 .54 (.13 9 ) 4 .69 (.1 85 ) 4 .20 (.1 65 ) -A - 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 6.4 7 (.255 ) 6.1 0 (.240 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 3 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .3 6 (.0 1 4) 3X M B A M 0.5 5 (.0 22) 0.4 6 (.0 18) 2 .92 (.11 5 ) 2 .64 (.10 4 ) 2 .5 4 (.1 00) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B . 2 C O N TR O L LING D IM E N S IO N : INC H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A IN T E R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE www.irf.com PART NUMBER IR F 1 0 10 9 24 6 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK 8 IRF640N/S/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200 ) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1 .39 (.055) 1 .14 (.045) B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X D2Pak Part Marking Information IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE www.irf.com A PART NUMBER F530S 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK 9 IRF640N/S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 10 IRF640N/S/L D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1.6 0 (.06 3 ) 1.5 0 (.05 9 ) 1 1.60 (.4 57 ) 1 1.40 (.4 49 ) 0.3 68 (.014 5 ) 0.3 42 (.013 5 ) 2 4.30 (.95 7) 2 3.90 (.94 1) 1 5.42 (.6 09 ) 1 5.22 (.6 01 ) TR L 10.90 (.42 9) 10.70 (.42 1) 1.75 (.069 ) 1.25 (.049 ) 4.7 2 (.1 36 ) 4.5 2 (.1 78 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M A X. Notes: 60.00 (2.362) M IN . NOTES : 1. C O M F O R M S T O EIA -418. 2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.2mH 26.40 (1.03 9) 24.40 (.961 ) 3 30.40 (1.197) M AX. 4 Pulse width 400s; duty cycle 2%. This is only applied to TO-220AB package RG = 25, IAS = 11A. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD 11A, di/dt 344A/s, VDD V(BR)DSS, TJ 175C IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 www.irf.com 11