© 2005 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -85 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ-85 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -50 A
IDM TC= 25°C, pulse width limited by TJ-200 A
IAR TC= 25°C -50 A
EAR TC= 25°C30mJ
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Plastic Body for 10s 250 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 5 g
VDSS = -85 V
ID25 = -50 A
RDS(on) = 55m
ΩΩ
ΩΩ
Ω
TO-247 (IXTH)
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = -250 µA -85 V
VGS(th) VDS = VGS, ID = -250 µA -3.0 -5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ =25°C -25 µA
VGS = 0 V TJ = 125°C-1mA
RDS(on) VGS = -10 V, ID = 0.5 • ID25 55 mΩ
Features
•International standard packages
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance (<5 nH)
- easy to drive and to protect
Applications
•High side switching
•Push-pull amplifiers
•DC choppers
•Automatic test equipment
Advantages
•Easy to mount with 1 screw
(isolated mounting screw hole)
•Space savings
•High power density
DS99140B(02/05)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET IXTH 50P085
IXTT 50P085
TO-268 (IXTT)
GSD (TAB)
http://store.iiic.cc/
IXTH 50P085
IXTT 50P085
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = -10 V; ID = ID25, pulse test 8 16 S
Ciss 4200 pF
Coss VGS = 0 V, VDS = -25 V, f = 1 MHz 1720 pF
Crss 750 pF
td(on) 46 ns
trVGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 39 ns
td(off) RG = 4.7 Ω (External) 86 ns
tf38 ns
Qg(on) 150 nC
Qgs VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 36 nC
Qgd 70 nC
RthJC 0.42 K/W
RthCS (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 -25 A
ISM Repetitive; pulse width limited by TJM -200 A
VSD IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, di/dt = 100 A/µs, VR = -50 V 180 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
TO-268 (IXTT) Outline
http://store.iiic.cc/
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
-140
-120
-100
-80
-60
-40
-20
0
-20-18-16-14-12-10-8-6-4-20
V
D S
- Volts
I
D
- Amperes
VGS = -10V
-5V
-6V
-7V
-8V
-9V
Fig. 1. Output Characteristics
@ 25 Deg. C
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-2.5-2-1.5-1-0.50
V
D S
- Volts
I
D
- Amperes
VGS = -10V
-9V
-5V
-6V
-7V
-8V
Fig. 4. R
DS(on)
Norm alize d to I
D25
V
alue vs.
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
ID = -50A
ID = -25A
VGS = -10V
Fig. 6. Drain Current vs. Case
Temperature
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-125-100-75-50-250
I
D
- Amperes
R
D S (on)
- Normalize
d
TJ = 125ºC
TJ = 25ºC
VGS = -10V
Fig. 3. Output Characteristics
@ 125 Deg. C
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-5-4-3-2-10
V
D S
- Volts
I
D
- Amperes
VGS = -10V
-9V
-5V
-6V
-7V
-8V
IXTH 50P085
IXTT 50P085
http://store.iiic.cc/
IXTH 50P085
IXTT 50P085
Fig. 11. Capacitance
0
1000
2000
3000
4000
5000
6000
-40-35-30-25-20-15-10-50
V
D S
- Volts
Capacitance - p
F
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= -50V
I
D
= -25A
I
G
= -1mA
Fig. 7. Input Adm ittance
-150
-125
-100
-75
-50
-25
0
-11-10-9-8-7-6-5-4
V
G S
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-150-125-100-75-50-250
I
D
- Amperes
g f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Dr ain V o lt age
-150
-125
-100
-75
-50
-25
0
-4-3.5-3-2.5-2-1.5-1-0.5
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Maxim um Transient Therm al
Re s istance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
http://store.iiic.cc/
